We report on the annealing effect on the structural and magnetic properties
of Ta5nm/Cu5nm/FeMn8nm/Co8nm/FeMn8nm/Ta5nm
samples prepared by sputtering, on silicon substrate, at room temperature. For the as-deposited samples the interfacial
exchange anisotropy field (He) between the Co and FeMn layers is about 95 Oe. It
increases sensitively with annealing to reach a maximum value of 135 Oe at 240 °C
annealing temperature. Above this temperature, we observe a strong decrease of He,
down to 90 Oe after annealing at 280 °C, and an increase of 50% of the saturation
magnetization. In order to understand the effect of the annealing on the magnetic
properties, we performed a detailed structural analysis by means of Rutherford back
scattering spectroscopy (RBS), nuclear magnetic resonance (NMR), and transmission
electron microscopy (TEM). All these techniques attribute the large changes in the
magnetic properties to the formation of a new ferromagnetic FeMnCo phase at the
FeMn/Co interfaces.