In this paper we present the results of modeling concerning
current-voltage (V < 0) characteristics of metal/ultra-thin oxide/semiconductor
structures, where the oxide thickness varies from 45 Åto 80 Å. We analyze
the theoretical influence of the temperature and Schottky effect, on the
Fowler-Nordheim (FN) conduction. The results obtained show that these influences
depend on the electric field in the oxide and the potential barrier at the
metal/oxide interface. At the ambient temperature, the influence on this
potential barrier is lower than 1.5% . However, it can reach 45% on the
pre-exponential coefficient (K1). It is therefore necessary to consider in the FN
classical conduction expression a correction term that takes account of the
temperature and Schottky effects. These results are validated experimentally by
modeling at high field, the current-voltage characteristics of the realized
structures. At low field, we have determined the excess current [3],
which is due to defects localized in the oxide layer, according to the structure
area and the oxide thickness. By modeling this excess current, we show that it
is of FN type, and deduct that the effective defect barrier depends little on
the structure area and the oxide thickness. By taking into account the effective
barrier value and the corrective factors due to the temperature and Schottky
effect, we determine the defect effective area and show that it is related to
the breakdown field of the structures: when the defect effective area increases,
the breakdown field decreases.