Co/n-GaN SDs has been prepared by magnetron DC sputtering technique. The Co/n-GaN SDs have annealed at 600 °C after a post-deposition. The diode parameters such as the ideality factor, barrier height and Richardson constant have been determined by thermionic emission (TE) equation within the measurement temperature range 60–320 K by the steps of 20 K in the dark. It has been seen that the parameters depend on the measurement temperature indicating the presence of a lateral inhomogeneity in the Schottky barrier. Therefore, it has been modified the experimental data by the thermionic emission (TE) mechanism with Gaussian distribution of the barrier heights by using Tung’s theoretical approach that the Schottky barrier consists of laterally inhomogeneous patches of different barrier heights. Thus, the modified Richardson plot according to Tung’s barrier inhomogeneity model [8] has given a Richardson constant of 27.66 A/(cm2 K2).

We present magnetotransport measurements on a high electron density AlGaN/GaN heterostructure with two subbands populated at T = 1.6 K. The transport scattering times, τtr, of each subband are first derived at low magnetic field by taking into account the magneto-intersubband scattering term. Then the quantum scattering times, τq, are extracted from independent Dingle plots, obtained at higher magnetic fields. All scattering times are studied as a function of the total electronic density, increased by the persistent photo-conductivity effect. A standard modelization, based on all common scattering mechanisms, reveals that the transport scattering time is governed by the short-range AlGaN/GaN interface roughness (IR) scattering, whereas the quantum scattering time is due to the smooth potential induced by remote ionized impurities (II) at the GaN surface. This intermediate situation of mixed disorder, where the τtr/τq ratio is greater than one, does not indicate that the mobility is limited by Coulomb scattering. It is due to the unusual condition, τtrII≫τtrIR≫τqII$ {\tau }_{\mathrm{t}r}^{\mathrm{II}}\gg {\tau }_{\mathrm{t}r}^{\mathrm{IR}}\gg {\tau }_{\mathrm{q}}^{\mathrm{II}}$.

In order to study the influence of palladium atom on structural and hyperfine properties, Fe100–xPdx films (x = 15, 20 and 36 at.%) were deposited by evaporation method onto a Si (1 0 0) substrate. They were then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and conversion electron Mössbauer spectroscopy (CEMS). X-ray diffraction analysis shows the presence of supersaturated solid solution with bcc structure for Pd concentration of 15% and 20%. However, for 36% of Pd, in addition to the supersaturated α-FePd (bcc) phase, another disordered FePd3 phase with fcc structure is present. The grain size did not change with Pd concentration and was about 11 nm, and the lattice parameter increased from 0.287 Å to 0.290 Å with an increasing Pd concentration. The adjustment of Mössbauer spectra confirms the results obtained by X-ray diffraction. Moreover, the Mössbauer spectra have shown that a magnetic texture is present for samples with 20 and 36%. For these Pd concentrations, we believe that a development of an out-of plane magnetic anisotropy occurs in our films.

PTFE-metal composites are promising candidates for use as sensor materials. In present study PTFE-Au composite layers were deposited by alternated ablation of pressed Teflon pellets and gold plates with focused beam of an ArF excimer laser at 6 J/cm2 fluence, while keeping the substrate at 150 °C temperature. The morphology and chemical composition of the ~3–4 μm average thickness layers was studied by electron microscopy and energy dispersive X-ray spectroscopy. The layers were mainly formed of PTFE gains and clusters which are covered by a conductive Au film. For testing the applicability of such layers as sensing electrodes, composite layers were prepared on one of the two neighbouring electrode of a printed circuit board. Cholesterol and glucose solutions were prepared using 0.1M NaOH solvent containing 10% Triton X-100 surfactant. The electrodes were immersed in the solutions and voltage between the electrodes was measured while a constant current was drawn through the sample. The influence of the analyte concentration on the power spectral density of the voltage fluctuation was studied.

Application of the radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique was studied to fabricate amorphous and nanocrystalline silicon (a-Si and nc-Si) thin films for photovoltaic devices at substrate temperature of 200 °C. Amorphous-crystalline transition of silicon thin films in working conditions of PECVD system was shown as a function of deposition parameters, i.e., dilution ratio of silane (SiH4) in hydrogen, total gas pressure during deposition and RF excitation power density. The crystalline volume as well as grain size of nanocrystalline silicon films could be successfully controlled by tuning those deposition parameters. Micro Raman scattering spectroscopy and spectroscopic ellipsometry (SE) methods were used to characterize the structure and crystallization of the deposited silicon thin films. We could make nc-Si thin films with various crystalline volumes. Nc-Si grain size was also controlled and was in the range of 3–5 nm.

A wide-angle broadband absorber which is realized by periodic structures containing graphene-based hyperbolic metamaterials (GHMM) and isotropic medium is theoretically investigated. The GHMM is composed of monolayer graphene and conventional dielectric, which the refractive index can be tuned by the chemical potential, the thickness of dielectric and phenomenological scattering rates, respectively. A periodic structure of GHMM can obtain a broadband absorption which is shown to absorb roughly 70% (relative bandwidth is larger than 45%) of all available electromagnetic wave in absorption bandwidth at normal incident angle. Compared with some previous designs, our proposed structure has a relative bandwidth over a broad frequency range in mid-infrared. This kind periodic structures offer additional opportunities to design novel optoelectronic devices.

Diamond-like-Carbon composite films, with embedded gold nanoparticles, were deposited onto glass substrates by using capacitively coupled plasma chemical vapour deposition (CCP-CVD) technique. The volume fraction of the metal nanoparticles in the films as well as the size of the nanoparticles was varied by varying the percentage of argon in the methane + argon mixture during the deposition. Bonding environments in these films were obtained from Raman and GIXRD. The nanomechanical and nanotribological properties of the Au-DLC nanocomposite films were evaluated. In situ SPM imaging was utilized to depict deformation characteristics developed during the static and dynamic contact events. Influence of metal incorporation on the extent of sp2/sp3 hybridization and thereby on the nanomechanical and nanotribological properties of the DLC films was studied.

This paper describes a method of calculation of the transverse distributions of electric E(x, y) and magnetic H(x, y) fields, in a rectangular waveguide within overmoded configuration – i.e., when a large number eigenmodes are present. It uses the fast Fourier transform, instead of the conventional decomposition in a series of TEMpq modes. Although not using the eigenmode decomposition, this method still exhibits the amplitude of the whole set of eigenmodes TEMpq. As an example, a single mode propagation is shown to facilitate understanding of the method. Another example is shown, using a 2D Gaussian profile as input, which contains a large number of eigenmodes (overmoded configuration). As a result, a series of 2D profiles are displayed along the longitudinal axis z of the waveguide, to show the transverse amplitude distribution of the fields E(x, y, z) and H(x, y, z) when a Gaussian profile is used at waveguide entrance. This non-standard configuration may be observed, for example, in infrared Free-Electron Lasers. This method is used here to calculate the ohmic losses which are integrated along the waveguide propagation, and which are deduced from the transverse distribution of magnetic field.

A seawater salinity sensor based on microring resonator with weak temperature dependence is proposed, which is coated by MgF2 film with positive thermo-optic coefficient. Temperature dependences of the sensor on fiber diameter, probing wavelength and coating thickness are theoretically investigated and ranges of microfiber diameters for weak temperature dependence are obtained. Under the temperature insensitive condition, sensitivity and detection limit of salinity sensing are studied. By optimizing the parameters of the sensing system, salinity sensitivity and detection limit can reach 0.03 nm/‰ and 0.13‰, respectively. The model presented here may be helpful for developing weak temperature dependence sensors for salinity sensing with high sensitivity, low detection limit and miniaturized sizes.

The effects of 1, 3 and 5 wt.% Cu additions on structure, Vickers hardness, indentation creep and corrosion behaviour of Al-5Ti-1B ternary alloy were studied and analyzed. The Al-5Ti-1B alloy exhibited a mixture of Al3Ti and TiB2 intermetallic compounds (IMCs), and Al solid solution. Additions of 1 and 3 wt.% Cu showed the same phases, indicating a complete solubility of Cu atoms in Al matrix. In addition, the Al-5Ti-1B-5Cu alloy exhibited a precipitation of CuAl2 IMC. Furthermore, additions of Cu decreased the particle size of Al matrix. This structural behaviour increased rapidly the Vickers hardness number (HV) from 643 to 1395 MPa, increased the indentation creep resistance and improved corrosion behaviour of the Al-5Ti-1B alloy. Cu is anti-corrosion phase when completely dissolved or precipitated as IMC in Al matrix.

This paper presents numerical simulations of transitions between back discharge regimes. Back discharge refers to any discharge initiated at or near a dielectric layer covering a passive electrode. In this work, a pinhole in a dielectric layer on a plane anode serves as a model for back discharge activity. We have studied transitions between back discharge regimes by varying the surface charge density on the dielectric layer and the electric field in front of the pinhole. From the variation of these two independent parameters, the back discharge regimes have been depicted as a mode diagram inspired by the experimental study of Masuda and Mizuno. The resulting diagram includes the different discharge regimes that are commonly observed in experiments. The propagation of a positive ionizing wave inside the pinhole toward its edge, and the resulting formation of a plasma zone at its exit constitute the onset stage of back discharge. From this stage, the transitions to volume discharge or surface discharge can occur. The volume discharge regime consists of the propagation of a discharge in space toward the cathode which can be superimposed with the propagation of a discharge above the dielectric layer surface. The diagram reveals the conditions for transitions between back discharge regimes.

We report experimental results on the degree of radiation damage in two duo-lateral position sensitive detectors (LPSDs) exposed to 193 nm and 253 nm ultraviolet (UV) beam. One of the detectors was an in-house fabricated n+p LPSD and the other was a commercially available p+n LPSD. We report that at both wavelengths, the degradation damage from the UV photons absorption caused a much more significant deterioration in responsivity in the p+n LPSD than in the n+p LPSD. By employing a simple method, we were able to visualize the radiation damage on the active area of the LPSDs using 3-dimensional graphs. We were also able to characterize the impact of radiation damage on the linearity and position error of the detectors.

Interaction of oxygen with the Mo(1 1 2) surface precovered by submonolayer beryllium films with various coverage degrees (θBe < 1) has been investigated by Auger electron spectroscopy, LEED and contact potential difference techniques. We have studied the effect of Be coverage degree on the oxygen adsorption kinetics, atomic structure and electronic properties of the O/Be/Mo(1 1 2) system. Contrary to the case of full-monolayer Be precoverage (θBe = 1), beryllium submonolayers can speed up the initial adsorption kinetics of oxygen by a factor of 10. The high sticking coefficient of oxygen on the Be/Mo(1 1 2) surface at θBe < 1 can be explained by the existence of areas on Mo(1 1 2) that are free of Be and provide fast oxygen adsorption, with O adatoms migrating further to the areas covered with Be (the spillover effect). The creation of beryllium oxide even on limited surface areas substantially decreases the oxygen sticking coefficient. This effect may originate from the surface deformation due to a structural misfit between the Be/O layer and the substrate. The coadsorbed Be/O layers with θBe < 1 modify the work function to values between those specific of the O/Be/Mo(1 1 2) systems with θBe = 0 and 1, which complies with the heterogeneous adlayer model.