We investigated the process of the hole inlet closure in surface-diffusion-driven transformation of arrays of high-aspect-ratio holes on Si(001) substrates. The inlet gradually shrinks while keeping the circular shape because of lateral bulging of the inlet surface. We observed complicated top view morphologies reflecting the four-fold symmetry of the Si(001) surface on the inlet surface. Large {111} and {113} facets are formed in the four equivalent azimuths of the [110], while corrugated patterns arise in the four equivalent azimuths of the [100]. Atomic force microscopy observations reveal that the corrugated pattern is composed of three types of small facets, namely, {110} and two {113} in relation of the mirror symmetry. The corrugated pattern formation is due to the geometrical restriction that there is no stable facet between (001) and (010) in the [010] azimuth. The observed morphological evolution is interpreted as surface-diffusion-driven transformation under constraint of the anisotropic surface energy of Si.

The authors describe an energy harvester circuit fabricated with integrated thin ferroelectric film capacitors on a silicon substrate. The harvesting mechanism is a folded double-beam cantilever with proof masses at both end points. Interdigitated electrode capacitors are located at the three points on the folded cantilever that are expected to experience maximum bending moment and should produce up to 5V as a function of external vibration. The die has the dimensions of 1.6mm on a side and is designed to be mounted in a TO-18 package transistor-style package. Due to its small size, the self-contained piezoelectric MEMs device should produce 50 picowatts in a 1g vibration environment while occupying little space.

The fabrication and characterization of thin-film silicon bulk resonators processed on glass substrates is described. The microelectromechanical (MEMS) structures consist of surface micromachined disk resonators of phosphorous-doped hydrogenated amorphous silicon (n+-a-Si:H) deposited by radiofrequency plasma enhanced chemical vapour deposition (RF-PECVD). The devices are driven into resonance by electrostatic actuation and the vibrational displacement is detected optically. Resonance frequencies up to 30 MHz and quality factors in the 103-104 range in vacuum were measured. A high density of modes that increases with resonator diameter was observed. Membrane-like vibrational modes show good agreement with finite element simulations. The effect of geometrical dimensions of the disks on the resonance frequency was also studied. When operated in air higher harmonic modes show increasing quality factors.

Silicon carbide (SiC) has received increasing attention on the integration of microelectro-mechanical system (MEMS) due to its excellent mechanical and chemical stability at elevated temperatures. However, the deposition process of SiC thin films tends to induce relative large residual stress. In this work, the relative low stress material silicon oxide was added into SiC by RF magnetron co-sputtering to form silicon oxycarbide (SiOC) composite films. The composition of the films was characterized by Energy dispersive X-ray (EDX) analysis. The Young’s modulus and hardness of the films were measured by nanoindentation technique. The influence of oxygen/carbon ratio and rapid thermal annealing (RTA) temperature on the residual stress of the composite films was investigated by film-substrate curvature measurement using the Stoney’s equation. By choosing the appropriate composition and post processing, a film with relative low residual stress could be obtained.

This paper reports the development of micromachining processes, as well as electrical and mechanical evaluation of a stimuli-responsive, mechanically-dynamic polymer nanocomposite for biomedical microsystems. The nanocomposite, which consists of a cellulose nanofiber network embedded in a poly(vinyl acetate) matrix, was shown to display a switchable stiffness comparable to bulk samples, with a Young’s modulus of 3570 MPa in the dry state, which reduced to ~25 MPa in the wet state, with a stiff-to-flexible transition-time dependent on exposed surface area. Upon immersion in phosphate buffered saline, the ac resistance through the PVAc-TW thickness was found to reduce from 8.04 MΩ to ~17 kΩ. Electrochemical impedance of an Au electrode on PVAc-TW was found to be ~178 kΩ at 1 kHz, and this was found to be stable as the probe shank was flexed to compress the metal, but increased with increasing flex angle when the metal was flexed into a tensile state.

Integration of nanomaterials (in the form of quantum dots, nanotubes, nanowires, nanocrystalline thin films, and nanocomposite films) with micromachined structures and devices has the potential to enable the development of microelectromechanical systems (MEMS) with enhanced functionality and improved performance. Here, we present a fabrication approach that combines spray-coating of electron beam resist with direct-write electron beam lithography to pattern nanomaterials on fragile micromachined components. Polymers and metallic structures in the form of arrays of holes, concentric circles, and arrays of lines, with critical dimensions ranging from 135 nm to 500 nm, were patterned directly on various micromachined structures including commercial metal-coated silicon microcantilevers used for atomic force microscopy, and commercial plate-mode SiC/AlN microresonators used for sensing.

In this work, we present a reliability and stability study of doped hydrogenated amorphous silicon (n+-a-Si:H) thin-film silicon MEMS resonators. The n+-a-Si:H structural material was deposited using radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) and processed using surface micromachining at a maximum deposition temperature of 110 ºC. n+-a-Si:H resonant bridges can withstand the industry standard of 1011 cycles at high load with no structural damage. Tests performed up to 3x1011 cycles showed a negligible level of degradation in Q during the entire cycling period which in addition shows the high stability of the resonator. In measurements both in vacuum and in air a resonance frequency shift which is proportional to the number of cycles is established. This shift is between 0.1 and 0.4%/1x1011 cycles depending on the applied VDC. When following the resonance frequency in vacuum during cyclic loading, desorption of air molecules from the resonator surface is responsible for an initial higher resonance frequency shift before the linear dependence is established.

SU-8 is being increasingly used as a compliant structural material for MEMS applications due to its interesting properties such as lower Young’s modulus and higher mechanical and thermal stability. One of the popular classes of MEMS devices is a piezoresitive microcantilever. Ultra-sensitive polymer composite cantilevers made up of SU-8 as a structural layer and 10% carbon Black in SU8 as a piezoresistive layer with lower Young’s modulus and higher gauge factor have been reported recently by our group. Higher electrical conductivity at lower concentration of conductive filler is of increased interest. Here we report a novel composite with purified multiwall carbon nanotubes (MWNT) in SU8 as a piezoresistor. MWNT were modified with octadecyl triphenyl phosphonium bromide (OTPB) in order to achieve debundled MWNT. A microcantilever device with integrated MWNT/SU-8 composite has been fabricated and characterized.

Biodegradable polymers with high mechanical strength, flexibility and optical transparency, optimal degradation properties and biocompatibility are critical to the success of tissue engineered devices and drug delivery systems. In this work, microfluidic devices have been fabricated from elastomeric scaffolds with tunable degradation properties for applications in tissue engineering and regenerative medicine. Most biodegradable polymers suffer from short half life resulting from rapid and poorly controlled degradation upon implantation, exceedingly high stiffness, and limited compatibility with chemical functionalization. Here we report the first microfluidic devices constructed from a recently developed class of biodegradable elastomeric poly(ester amide)s, poly(1,3-diamino-2-hydroxypropane-co-polyol sebacate)s (APS), showing a much longer and highly tunable in vivo degradation half-life comparing to many other commonly used biodegradable polymers. The device is molded in a similar approach to that reported previously for conventional biodegradable polymers, and the bonded microfluidic channels are shown to be capable of supporting physiologic levels of flow and pressure. The device has been tested for degradation rate and gas permeation properties in order to predict performance in the implantation environment. This device is high resolution and fully biodegradable; the fabrication process is fast, inexpensive, reproducible, and scalable, making it the approach ideal for both rapid prototyping and manufacturing of tissue engineering scaffolds and vasculature and tissue and organ replacements.

In this study, aluminum nitride (AlN) and gallium nitride (GaN) thin films have been grown via metal organic vapor phase epitaxy (MOVPE) on silicon and sapphire substrates. Samples were annealed at temperatures ranging from 450 to 1000 °C in atmosphere. AlN and GaN thin film quality has been characterized before and after annealing using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and atomic force microscopy (AFM). Surface acoustic wave (SAW) devices with titanium/platinum interdigital transducers (IDTs) designed to operate at the characteristic frequency and fifth harmonic have been realized using traditional optical photolithographic processes. SAW devices on GaN were thermally cycled from 450 to 850 °C. The S21 scattering parameter of SAW devices was measured before and after thermal cycling by a vector network analyzer (VNA). An approach for the suppression of electromagnetic feedthrough (EF) to improve device performance is discussed. Feasibility of 5th harmonic excitation for GHz operation without sub-micron fabrication is also investigated. SAW devices have also been fabricated on the more traditional SAW substrate, lithium niobate (LiNbO3), and device response was compared with those on AlN and GaN at room temperature.

The performance of a co-integrated silicon pressure sensor for the 1-bar full scale range was optimized. A gain in signal of ca. 5% was calculated and verified by optimizing the piezoresis-tors position on the membrane. The influence of alignment errors between the backside cavity mask and the positions of the piezoresistors on the membrane’s front side were calculated. De-pending on the asymmetry, a maximal electrical signal deviation of 1% was found. The impact of underetching effects (KOH) at the backside mask on electrical signals was also analyzed. Un-deretching has a certain range, alters the membrane size, and has a strong impact on sensor per-formances. In a worst case scenario signal variations caused by underetching could be finally reduced from 15% to 4%.

We report on the realization of high precision hollow structures directly on silicon suitable for liquid and gas/vapor transport. The formation of hollow structures requires high aspect ratio etching combined with bulk back-side micro-machining to realize silicon-based membranes. The use of a slant angle deposition method has been used as an alternative method for three-dimensional lithography. The transfer of acetone vapor through such tiny holes shows an anomalous behavior where a sharp rise is observed followed by an exponential and gradual decay. These structures can be eventually used as mass ion separation devices.

Lowering the silicon germanium (SiGe) deposition temperature from the current 450°C to below 250°C will enable processing Micro Electro-Mechanical Systems (MEMS) on flexible polymer instead of on rigid silicon substrates or glass carriers. A major disadvantage of such a low temperature deposition is that the films are amorphous, with high hydrogen content and yield poor electrical and mechanical properties. To ensure films suitable for MEMS applications, a post-deposition laser annealing (LA) treatment is used. It is essential that the contact resistance between the SiGe MEMS structural layer and any lower electrode is minimized. In this work we investigate what beneficial effect a LA treatment can have on the contact resistivity of an initially amorphous SiGe MEMS structural layer with a bottom TiN electrode. We report a minimum contact resistivity of 2.14×10−3 Ωcm2.

PbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) buffered stainless steel (SS) substrates by sol-gel method. The effect of LNO buffer layer on the orientation and electric properties of PZT thin films for different thicknesses were studied. X-ray diffraction (XRD) results indicated that PZT thin films on SS substrates exhibit the (100) preferred orientation with the LNO buffer layers. Scanning electron microscope (SEM) images show that PZT thin films were well crystallized with grain size of about 100 nm. PZT thin films deposited on SS maintain the excellent ferroelectric properties with remnant polarization of about 20 μC/cm2.

The high surface to volume ratio of nanoparticles allows a detailed experimental study of the surface phenomena associated with solid bridging. Besides bulk analyses, the local view on the structure and composition via HRTEM is particularly essential. 50 nm core shell particles consisting of a silicon (Si) core and a SiO2 shell were used as model system to understand surface phenomena appearing for Si-based nanostructures. Evaporative drying from de-ionized water shows the most significant bridging effect based on SiO2. There is only a localized deposition of oxides between the particles during the drying process and no overall oxidation. For the deposition material, silicates are the most likely candidates.

To achieve ultrasonic transducers operating above 100 MHz, square pillar shaped Pb1.1(Zr0.53Ti0.47)O3 thick film structures were fabricated using a chemical solution deposition (CSD) process. The fabricated sample showed well-saturated P-E hysteresis curve and butterfly-shaped longitudinal displacement curve. The fabricated samples generated more than 100 MHz ultrasonic waves with a pulser/receiver. Electrical impedance properties of the samples were measured with an impedance analyzer. A number of spurious resonant modes were observed in the frequency range from 40 to 300 MHz. The characteristics of the sample were investigated by finite element method (FEM). The FEM simulations were in good agreement with the experimental results. For free-standing (substrate free) 10-μm-thick PZT film models, the resonant frequency of the thickness vibration mode was estimated to be 160 MHz with the FEM simulations. These results indicate that the substrate affects the behavior of the spurious resonant modes. Therefore, a sample structure was designed using the FEM simulation. The FEM result suggests that the backside of the substrate should be removed to reduce the substrate effects. Consequently, the thickness vibration mode was observed clearly at 160 MHz. This structure is applicable to the micromachined ultrasonic transducers (MUT) operating in the thickness vibration mode above 100 MHz.

This paper presents the experimental and numerical study of hydrophobic interaction forces at nanometer scale in the scope of engineering micron-sized building blocks for self-assembly in liquid. The hydrophobic force distance relation of carbon, Teflon and dodeca-thiols immersed in degassed and deionized water has been measured by atomic force microscopy. Carbon and dodeca-thiols showed comparable attractive and binding forces in the rage of pN/nm2. Teflon showed the weakest binding and no attractive force. Molecular dynamic simulations were performed to correlate the molecular arrangement of water molecules and the hydrophobic interactions measured by atomic force microscopy. The simulations showed a depletion zone of 2Å followed by a layered region of 8Å in the axis perpendicular to the hydrophobic surface.

The crystallographic texture of lead zirconate titanate (PZT) thin films strongly influences the piezoelectric properties used in MEMS applications. For PZT films poled to saturation, the piezoelectric response is sequentially greater for random, {111}, and {001} texture. Textured growth can be achieved by relying on crystal growth habit and can also be initiated by the use of a seed layer that provides a heteroepitaxial template. Template choice and the process used to form it determine the structural quality and ultimately influence performance and reliability of MEMS PZT devices such as switches, filters, and actuators. This study focuses on how {111}-textured PZT is generated by a combination of crystal habit and templating mechanisms that occur in the PZT/bottom-electrode stack. The sequence begins with {0001}-textured Ti deposited on thermally grown SiO2 on a Si wafer. The Ti is converted to {100}-textured TiO2 (rutile) through thermal oxidation. Then {111}-textured Pt can be grown to act as a template for {111}-textured PZT. The Ti and Pt are deposited by DC magnetron sputtering. The TiO2 and Pt film textures and structure were optimized by variation of sputtering deposition times, temperatures and power levels, and post-deposition anneal conditions. The relationship between Ti, TiO2, and Pt texture and their impact on PZT growth will be presented.

MEMS community is increasingly using SU-8 as a structural material because it is self-patternable, compliant and needs a low thermal budget. While the exposed layers act as the structural layers, the unexposed SU-8 layers can act as the sacrificial layers, thus making it similar to a surface micromachining process. A sequence of exposed and unexposed SU-8 layers should lead to the development of a SU-8 based MEMS chip integrated with a pre-processed CMOS wafer. A process consisting of optical lithography to obtain SU-8 structures on a CMOS wafer is described in this paper.