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Residual Stress in Sputtered Silicon Oxycarbide Thin Films

Published online by Cambridge University Press:  20 January 2011

Ping Du ,
I-Kuan Lin ,
Yunfei Yan  and
Xin Zhang
Ping Du
Affiliation:
Department of Mechanical Engineering, Boston University, Boston, MA 02215, U.S.A.
I-Kuan Lin
Affiliation:
Department of Mechanical Engineering, Boston University, Boston, MA 02215, U.S.A. Global Science & Technology, Greenbelt, MD 20770, U.S.A.
Yunfei Yan
Affiliation:
Department of Mechanical Engineering, Boston University, Boston, MA 02215, U.S.A.
Xin Zhang
Affiliation:
Department of Mechanical Engineering, Boston University, Boston, MA 02215, U.S.A.
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Abstract

Silicon carbide (SiC) has received increasing attention on the integration of microelectro-mechanical system (MEMS) due to its excellent mechanical and chemical stability at elevated temperatures. However, the deposition process of SiC thin films tends to induce relative large residual stress. In this work, the relative low stress material silicon oxide was added into SiC by RF magnetron co-sputtering to form silicon oxycarbide (SiOC) composite films. The composition of the films was characterized by Energy dispersive X-ray (EDX) analysis. The Young’s modulus and hardness of the films were measured by nanoindentation technique. The influence of oxygen/carbon ratio and rapid thermal annealing (RTA) temperature on the residual stress of the composite films was investigated by film-substrate curvature measurement using the Stoney’s equation. By choosing the appropriate composition and post processing, a film with relative low residual stress could be obtained.

Keywords

sputteringcompositeceramic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1299: Symposium S – Microelectromechanical Systems—Materials and Devices IV , 2011 , mrsf10-1299-s09-10
Copyright
Copyright © Materials Research Society 2011

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