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Thin film amorphous silicon bulk-mode disk resonators fabricated on glass substrates

Published online by Cambridge University Press:  20 January 2011

A. Gualdino ,
V. Chu  and
J. P. Conde
A. Gualdino
Affiliation:
INESC-MN and Institute of Nanoscience and Nanotechnology, Lisbon, Portugal
V. Chu
Affiliation:
INESC-MN and Institute of Nanoscience and Nanotechnology, Lisbon, Portugal
J. P. Conde
Affiliation:
INESC-MN and Institute of Nanoscience and Nanotechnology, Lisbon, Portugal Department of Chemical and Biological Engineering, Instituto Superior Técnico, Lisbon, Portugal
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Abstract

The fabrication and characterization of thin-film silicon bulk resonators processed on glass substrates is described. The microelectromechanical (MEMS) structures consist of surface micromachined disk resonators of phosphorous-doped hydrogenated amorphous silicon (n+-a-Si:H) deposited by radiofrequency plasma enhanced chemical vapour deposition (RF-PECVD). The devices are driven into resonance by electrostatic actuation and the vibrational displacement is detected optically. Resonance frequencies up to 30 MHz and quality factors in the 103-104 range in vacuum were measured. A high density of modes that increases with resonator diameter was observed. Membrane-like vibrational modes show good agreement with finite element simulations. The effect of geometrical dimensions of the disks on the resonance frequency was also studied. When operated in air higher harmonic modes show increasing quality factors.

Keywords

microelectro-mechanical (MEMS)thin filmamorphous
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1299: Symposium S – Microelectromechanical Systems—Materials and Devices IV , 2011 , mrsf10-1299-s07-04
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Collins, R. W., Ferlanto, A. S., Current Opinion in Solid State and Mater. Sci. 6, 425 (2000).CrossRefGoogle Scholar
2. Fu, Y.Q., Luo, J. K., Milne, S. B., Flewitt, A. J., Milne, W. I., Mater. Sci. Engng. B 124, 132 (2005).CrossRefGoogle Scholar
3. Alpuim, P., Chu, V., Conde, J. P., J. Vac. Sci. Technol., 21(4), 1048Jul (2003).CrossRefGoogle Scholar
4. Gaspar, J., Paul, O., Chu, V., Conde, J.P., J. Micromech. Microeng. 20, 035022 (2010)CrossRefGoogle Scholar
5. Jing, W., Ren, Z., Nguyen, C.T.-C. IEEE Trans. Ultrason., Ferroelectr., Freq. Control, 51(12), 1607–1628 (2004),CrossRefGoogle Scholar
6. Kaajakari, V., Mattila, T., Oja, A., Kiihamaki, J., Seppa, H., IEEE Electron Device Lett, 25(4), 173–175, (2004).CrossRefGoogle Scholar
7. Nguyen, C.T.-C., IEEE Trans. Microw. Theory Tech, 47(8), 1486–1503, (1999).CrossRefGoogle Scholar
8. Ilic, B., Craighead, H.G., Krylov, S., Senaratne, W., Ober, C., Neuzil, P., J. Appl. Phys. 95(7), 3694–3703 (2004).CrossRefGoogle Scholar
9. Dufour, I., Heinrich, S. M., Josse, F., J. Microelectromech. Syst. 16(1), 44–49 (2007).CrossRefGoogle Scholar
10. Zhili, H., Pourkamali, S., Ayazi, F., J. Microelectromech. Syst. 13(6), 1043–1053 (2004).Google Scholar
11. Lee, J. E.-Y., Zhu, Y., Seshia, A. A., J. Microelectromech. Syst. 18(6), 064001 (2008).Google Scholar
12. Sheng-Shian, L., Yu-Wei, L.; Yuan, X., Zeying, R., Nguyen, C.T.-C. IEEE Ultrasonics Symposium, 3, 1596–1599 (2005).Google Scholar
13. Gaspar, J., Chu, V., and Conde, J. P., Appl. Phys. Lett., 93(12), 10018–10029 (2003).Google Scholar
14. Leissa, A. W., Vibration of Plates, NASA SP-160 (1969).Google Scholar
15. Waggoner, P. S., Tan, C. P., Bellan, L., Craighead, H. G., J. Appl. Phys., 105(9), 094315 (2009).CrossRefGoogle Scholar
16. Cleland, A. N., Foundations of Nanomechanics, (Springer, New York, 2002).Google Scholar
17. Yang, J., Ono, T., Esashi, M., J. Microelectromech. Syst. 11, 775–783 (2002).CrossRefGoogle Scholar
18. Lifschitz, R., Roukes, M. L., Phys. Rev. B 61, 5600–5609, (2000).CrossRefGoogle Scholar
19. Sharos, L. B., Raman, A., Crittenden, S., and Reifenberger, R., Appl. Phys. Lett. 84, 4638 (2004).CrossRefGoogle Scholar
20. Dohn, S., Sandberg, R., Svendsen, W., and Boisen, A., Appl. Phys. Lett. 86, 233501 (2005).CrossRefGoogle Scholar