We report on the selective area heteroepitaxy and facet evolution of AlGaN nanostructures on GaN/sapphire substrate using various mask materials. We also report on the challenges associated with selection of an appropriate mask material for selective area heteroepitaxy of AlGaN with varying Al composition. The shape and the growth rate of the nanostructures are observed to be greatly affected by the mask material. The evolution of the AlGaN nanostructures and Al incorporation were studied exhaustively as a function of growth parameters; including temperature, pressure, NH3 flow, total alkyl flow and TMAl/(TMAl+TMGa) ratio. The growth rate of nanostructures was reduced drastically when higher Al percentage AlGaN nanostructures were grown. The growth rates were increased for higher Al percentage AlGaN using a surfactant which resulted in a high quality pyramidal structure. As indicated by high resolution x-ray diffraction (XRD) and cathodoluminescence (CL) spectroscopy, composition of Al in the AlGaN nanostructure is significantly different from that of a thin film grown under the same growth conditions.

Research was conducted to improve performance of organic light-emitting devices (OLEDs) on flexible polyethylene terephthalate (PET) substrates based on tris-(8-hydroxyquinoline)¨Caluminum (Alq3). Based on double layer structure, indium tin oxide(ITO)/N,N’Diphenyl-N-N’-di(m-tdyl) benzidine (TPD)/Alq3/Al, flexible OLEDs on polyethylene terephthalate (PET) substrates were fabricated by physical vapor deposition (PVD) method, with the Alq3 layer deposited at 90°C , 120°C and 150°C, respectively. It was found that the temperature had great effect on the surface morphology of Alq3 and the devices fabricated at high temperature (150°C) showed a higher external efficiency than those fabricated at low temperature (90°C , 120°C).

Multi wall carbon nanotubes (MWCNTs) doping poly(3,4-ethylene dioxythiophene) (PEDOT) : poly(styrene sulfonate) (PSS) was used as hole injection layer to improve performance of OLEDs based on Alq3. PEDOT:PSS, which was doped by 0.2 wt.%, 0.4 wt.%, 0.6 wt.%, 0.8 wt.% and 1 wt.% MWCNTs, was coated on clean PET substrate with ITO by spin- coating method. The light-emitting layer (Alq3) and cathode layer (Al) were deposited by PVD method. It was found that the electroluminescence (EL) intensity of the OLEDs were highly improved by adopting MWCNTs doping PEDOT:PSS as hole injection layer. The luminous intensity obtained from the device with a concentration of 0.4 wt.% MWCNTs in the PEDOT:PSS layer was three folds as those adopted from device without MWCNTS doping in the PEDOT:PSS layer.

This article reports on the effects of HVPE GaN substrate condition on the performance of 405 nm LEDs grown by MOCVD. Three 1 cm2 HVPE GaN substrates were received from a commercially available source and characterized for the substrate condition. AFM and optical microscope were used to characterize the surface morphology and this was found to vary from a “moonscaped” morphology to a smooth surface. The presence of nanoscale pits and substrate bowing were also found. XRD measurements showed a variation in crystalline quality of the substrates with the FWHM of the (0002) rocking curve varying from 87 arcsec to 192 arcsec with some substrates showing multiple peaks in the rocking curve. Photoluminescence was used to measure the optical quality of the substrates and both band edge luminescence and yellow luminescence were found to vary greatly within one substrate as well as from substrate to substrate. After characterization of each individual substrate a 405 nm LED structure was grown using identical growth conditions on each substrate, in separate growth runs. A GaN template was included in each growth for consistency. The surface morphology and crystalline quality of the device structures were then measured. Following this devices were fabricated and tested for electroluminescence optical output power and current-voltage characteristics. The device characteristics and performance as related to starting substrate quality will be presented with respect to substrate surface morphology and crystalline structure.

Several sulfide phosphors, such as CaS:Ce3+,Na+, CaS:Eu2+,Ce3+, ZnS:Te,Mn, ZnS:Se,Te,Mn and ZnS:Ce,Li were prepared and their excitation and luminescent spectra were investigated. The possible applications in LED-Phosphors white light devices are discussed.

We report on the integration of flowable oxide based Fresnel microlenses with AlGaN based 280 nm light emitting diodes (LED). The lenses were fabricated on the back side of the LED sapphire substrates using direct electron beam writing. Ten concentric rings with different width and variable thickness were designed for 360 degree phase correction. Within each ring the thickness was varied in five steps to approximate a linear profile. The width of each thickness step varied from 100 nm to several microns. Outer diameter of the lens was 65μm. A focal distance of 68 μm was measured for the fabricated microlenses. At the focal plane a FWHM of intensity profile as small as 14 μm was measured for lenses integrated with 30 μm diameter UV LEDs . The maximum intensity at focal plane exceeded the background radiation by a factor of 50. Comparison of the LED performance before and after the lens fabrication did not reveal any degradation of integral efficiency of devices. These results demonstrate the feasibility of using flowable oxide Fresnel microlenses in optical systems based on micro-pixel deep UV AlGaN LEDs.

The red-emitting phosphors of Eu3+ doped M2Si2O7 (M=La, Y) were synthesized by a solid-state reaction method and their luminescence properties in UV-VUV region have been studied. On the excitation spectra, the Eu3+-O2- CT band is of higher intensity for La2Si2O7, while for Y2Si2O7, the absorption around 150nm is much stronger and this can be assigned to the Y3+-O2- CT band in company with the Si-O group absorption. The emission spectra show higher intensity and better color purity for La2Si2O7:Eu3+ under 254nm excitation due to Eu3+ occupying the non-centrosymmetric site. Under 147nm excitation, Y2Si2O7:Eu3+ exhibits stronger emission with purer red, which can be corresponded to the absorption of Y3+-O2- CT in the VUV region.

YBO3:5% Eu3+ co-doped with some ns2-type ions were synthesized by solid-state reaction and their luminescence properties under ultraviolet (UV) and vacuum ultraviolet (VUV) region were investigated. The results indicated that in the excitation spectrum of YBO3:5%Eu3+, the strong charge transfer (CT) band of Eu3+ was located in the UV region and the absorption band of the host lattice lay in the VUV region. When the ns2-type ions, such as Sn2+ and Sb3+(n=5), Tl+, Pb2+ and Bi3+(n=6) were co-doped into the host lattice of YBO3:5%Eu3+, the CTS band of Eu3+ was shifted. The intensity of the host lattice absorption band was improved with the incorporation of Tl+, Pb2+ or Bi3+, while decreased with Sn2+ or Sb3+. These luminescent phenomena were analyzed in detail and possible reasons were given.

Time-resolved photoluminescence studies can provide useful information for the development of InGaN/GaN heterostructures for long wavelength visible emitters. In this paper, we present results of time-resolved photoluminescence from samples grown using two different approaches to achieve green emission from InGaN/GaN MQWs. In one approach, samples, with high indium incorporation, were grown on a high quality AlN substrate to achieve green emission. The resulting photoluminescence decay of the green luminescence is long-lived and non-exponential. Quantitative analysis showed that the decay has a stretched-exponential characteristic, typical of InGaN/GaN MQW with potential fluctuation along the growth plane. This carrier localization, in a structure with low defect density, proves to be an effective means to achieve green emission. In another approach, a piezoelectric Stark-like ladder effect is used. In this case, a methodical layer-by-layer growth homogeneity optimization process was adopted to achieve an optical transition below the electron to heavy-hole (e1hh1) transition when the quantum well is subjected to the strong piezoelectric polarization dipole. This approach has proven to be successful in achieving green luminescence on conventional sapphire substrates. The resulting photoluminescence decay at 14 K, of a sample grown by this approach, is single exponential and shorter in duration than the decay observed in the first approach. This exponential decay is consistent with previous AFM studies that revealed a homogeneous active region.

Dioctyl-substituted polyfluorene (PF) is especially well known for the presence of an unusual spectral feature identified as the beta phase, known to originate in regions of enhanced chain planarity. Although this phase appears as a minority constituent it dominates the emission, resulting in a red shift of the luminescence. We present Raman scattering studies of poly[9,9'-(di n, octyl) fluorene] as a function of thermal cycling that establish a connection between the conformational isomers and chain morphology. Density-functional theory calculations of the vibrational spectra of single chain oligomers in conjunction with our experimental results demonstrate the incompatibility of the beta phase with the overall alpha crystalline phase. Further, electroluminescence and photoluminescence measurements from PF-based light-emitting diodes are presented and discussed in terms of the crystalline phases and chain morphologies in the PFs.

The strain status of the buried InAs self-assembled quantum dot was comprehended by measurement first time. Results show the in-plane strain is compressive and lattice in the growth direction is lager than the lattice of GaAs. The strain of the sample annealed at 650 degree relaxes in the growth direction. The growth and the lateral direction become relaxed in the sample annealed at 750 degree.

Optical properties of sodium and other alkali metals (lithium & potassium) incorporated into nano hosts of group 4 elements (carbon, silicon & germanium) were investigated as candidates for solid state light emitting materials. First, optical properties were calculated by quantum mechanical simulations using TDDFT method. Results of the simulations indicate that alkali doped group 4 nano hosts exhibit optical transitions in and around the visible range whereas, undoped nano hosts do not have any at similar wavelengths. Some combinations of alkali dopant and nano host give rise to multiple transitions in the visible. One of the simulated combinations, Li dopant and carbon nano host was chosen to be synthesized for experimental verification. Optical absorption and emission characteristics of the synthesized material were measured and compared with those obtained from quantum mechanical calculations. Both the wavelength and the relative intensity of the measured optical transitions were found to be in good agreement with the results of the calculations. Alkali metals which have good light emission characteristics can be combined with group 4 indirect semiconductors to obtain new nano materials which have interesting optical properties in the visible.

About 20 years ago, the discovery of an AlN buffer layer lead to the breakthrough in epitaxial growth of GaN layers with mirror-like surface, using a metal organic chemical vapor deposition (MOCVD) technique on sapphire substrates. Since then, extensive efforts have been continued to develop a conductive buffer layer/substrate for MOCVD-grown GaN layers to improve light emission of GaN light-emitting diodes. In the present study, we produced MOCVD-grown, continuous, flat epitaxial GaN layers on nitrogen enriched TiN buffer layers with the upper limit of the nitrogen content of TiN deposited at room temperature (RT) on sapphire substrates. It was concluded that the nitrogen enrichment would reduce significantly the TiN/GaN interfacial energy. The RT deposition of the TiN buffer layers suppresses their grain growth during the nitrogen enrichment and the grain size refining must increase nucleation site of GaN. In addition, threading dislocation density in the GaN layers grown on TiN was much lower than that in the GaN layers grown on AlN.

We have focused to grow cubic GaN (c-GaN) on Si(100) substrates using boronmonophosphide(BP) buffer crystals. We have successfully grown BP crystals by MOVPE technique with electrically n-type and thickness deviation is within several % along 2inch wafer under undoped conditions. The electrical conductivity is less than 0.5mohm∙cm. We have preliminary grown GaN by RF-MBE technique, before we carry out mass-producing MOVPE on larger diameter Si substrates. It has been found the cubic type GaN has been successfully grown on the substrates by measuring X-ray diffraction. The crystal quality and defect generation were observed by TEM. It has been found that there are much more dislocations than 109cm-2 generated at GaN/BP interface.

Two new blue emitting phosphors, SrZnO2:Pb2+ and Ce3+ were synthesized by adipic acid and sucrose templated sol-gel routes, respectively. The resulting phosphor particles were fine, nanocrystalline and pure. The optimum activator concentrations were found to be 1 mol% Pb2+ and 12 mol% Ce3+. Two excitation bands centered at 283 and 317 nm, plus a weak shoulder at 275 nm were observed for Pb2+ doped samples, however only one broad excitation band with a maximum at 294 nm was observed for Ce3+ doped samples fired at 1000 °C for 2h. The emission spectra of SrZnO2:Pb2+ showed a very broad band extending from 374 to 615 nm with a maximum at ~455 nm which was ascribed to the 3P1 ¡æ 1S0 transition on the Pb2+ ions allowed by the strong spin-orbit (SO) coupling. Similarly, SrZnO2:Ce3+ showed a broad emission band extending from 374 to 609 nm and centered at 467 nm. This broad emission was attributed to the 5d1 ¡æ 4f1 transition of Ce3+ ions. The lower level 2F5/2 of the 4f1 is populated but the level 2F7/2 is almost empty at room temperature where all measurements were taken. The luminescence properties of Ce3+, K+ co-doped SrZnO2 revealed that the characteristic band locations remained the same and the ratio of emission to excitation intensities were constant. X-ray diffraction patterns showed that the SrZnO2 phase started to form at 900 °C (after 2 hrs), and the single-phase SrZnO2 obtained at 1000 °C. SEM micrographs of both phosphors have a rounded and filled morphology for individual particles with an approximate diameter of 50-250 nm. Dynamic light scattering studies revealed that average particle size is around 1 ¥ìm for both phosphors.

Non Injected Facet (NIF) lasers were developed to increase catastrophic optical damage level of the devices. In this work we present the analysis of the laser diodes (LD) front facet temperature distribution. Micro-thermoreflectance technique is used to perform a detailed temperature maps of the operating LDs. Such a technique gives us temperature maps with a spatial resolution better than 1mm and area of the maps covers active region and substrate crystal. We demonstrate micro thermoreflectance as a perfect tool to determine real temperature distribution of the operating laser diode front facet. Examined series of LDs under investigation have been made in two different ways. Major point of this work is comparison of the front facet temperature distribution of devices with and without injected facets. We compare temperature value and temperature distribution in the waveguide region in both types of the LDs. In our experiment NIF laser diodes exhibit facet temperatures increased by a factor of 1.4.

In this work, organic light emitting devices (OLEDs) based on a blue-emitting fluorescent guest/host-system from Merck OLED Materials GmbH is investigated. OLEDs comprising a hole transport layer (HTL), the emissive film Merck Blue Host:Merck Blue Guest (MBH:MBG), a hole-blocking film and the electron transport layer (ETL) were prepared by vacuum thermal evaporation. The hole-blocking capabilities of aluminum(III)bis(2-methyl-8-quinolinato)4-phenylphenolate (BAlq) and the host material MBH were investigated. By employing an additional HBL, the current efficiency could be increased from 5.7 to 7.4 cd/A. Furthermore, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane (F4-TCNQ) doping of the HTL was investigated. Devices with 4,7-diphenyl-1,10-phenanthroline (BPhen) or 1,3,5-Tris-(N-phenylbenzimidazol-2-yl)benzene (TPBI) as alternative ETLs were fabricated and conclusions were drawn regarding the charge balance in the devices. It was found that employing tris-(8-hydroxyquinoline) aluminum (Alq3) as ETL leads to the best lifetimes of about 2000 hours at a constant current of 20 mA/cm2 while p-doping in combination with BPhen as ETL leads to the highest efficiency of 5.7 lm/W max. and 4.4 lm/W at 1000 cd/m2.