MG/HK was introduced into CMOS technology and enabled scaling beyond the 45/32nm technology node. The change in gate stack from poly-Si/SiON to MG/HK introduced new reliability challenges like the positive bias temperature instability (PBTI) and stress induced leakage currents (SILC) in nFET devices which prompted thorough investigation to provide fundamental understanding of these degradation mechanisms and are nowadays well understood. The shift to a dual-layer gate stack also had a profound impact on the time dependent dielectric breakdown (TDDB) introducing a strong polarity dependence in the model parameter. As device scaling continues, stochastic modeling of variability, both at time zero and post stress due to BTI, becomes critical especially for SRAM circuit aging. As we migrate towards novel device architectures like bulk FinFET, SOI FinFETs, FDSOI and gate-all-around devices, impact of self-heating needs to be accounted for in reliability testing.

In this paper we summarize the fundamentals of MG/HK reliability and discuss the reliability and characterization challenges related to the scaling of future CMOS technologies.

The upconversion nanoparticles (UCNPs) possess the ability to absorb near infrared energy (980 nm) and upconvert it to emit in the visible spectra. In this research, the UNCPs emit in red (660 nm) due to the electronic transitions between two rare earth ions: Er3+ and Yb3+, this process is called energy transfer upconversion (ETU). The UCNPs were functionalized with aminosilanes and folic acid receptors (UCNP-FR) and analyzed by transmission electron microscopy, Fourier transform infrared spectroscopy and luminescence measurements. UCNPs-FR of Y2O3 have a particle size of 70 ± 10 nm and the Gd2O3 have a 50 ± 10 nm particle size. Both showed a good luminescence spectrum in comparison with the bare ones. Cytotoxicity of different amounts between 0.001 µg/ml to 1 µg/ml of bare and functionalized UCNPs was measured with the colorimetric assay MTT in three cancer cell lines: human cervical adenocarcinoma (HeLa), human breast cancer cells MB-MDA-231. Some concentrations of bare UCNPs were cytotoxic for cancer cells; however after their functionalization they resulted to be non-cytotoxic. The functionalized UCNPs were able to bind to folate receptors which are overexpressed in cervical and breast cancers cells. It was demonstrated by confocal microscopy, that the functionalized UCNPs were internalized into the cancer cells, confirming that they can be used as biolabels for breast and cervical cancer cells.

Terbium and ytterbium co-doped aluminum oxynitride thin films were grown onto silicon substrates using radiofrequency magnetron sputtering. Aluminum oxynitride samples doped with 4.6 at. % of Yb3+ and co-doped with 0.4 at. % of Tb3+ were obtained. The prepared samples were annealed from 150°C to 850°C in steps of 100°C. By using energy dispersive X-ray analysis we measured the sample composition and the doping concentration. The emission intensities at different annealing temperatures were characterized using photoluminescence measurements upon excitation at 325 nm. The 5D4 → 7F5 main transition of Tb3+ and the characteristic near infrared emission at 980 nm of Yb3+ were recorded. In order to study the luminescence behavior of the samples in terms of a down conversion process, we have plotted the integrated areas of the main transition peaks versus the annealing temperature.

For a wide range of bandgaps of solar cell materials, the potential contribution of upconversion materials was calculated and related to various configurations of the solar cell and upconversion layers. Moreover, by comparing these various strategies with the potential of a dual junction tandem cell configuration, a compelling case is made for upconverters.

At idealized 100% conversion efficiency, the upconverter with a single junction cell is more efficient than a dual junction tandem cell. It was also found that a single junction cell with an upconverter that is ‘only’ 80% efficient has a similar efficiency as an ideal dual junction cell. This result shows that upconverters are certainly a route worthwhile to pursue, especially because the single junction cells plus upconverters could have more cost reduction potential than dual junction cell configurations.

Additionally, it was investigated if an upconverter that uses two different photon energies would create a large surplus in efficiency. For a cell band gap of 1.55 eV a theoretical maximum efficiency (here defined as Voc*Isc) of 54.5% was calculated. Although there is a further increase in efficiency compared to converters with a single conversion energy, very careful bandgap tuning with a tolerance < 0.02 eV is required, which makes this system rather sensitive for material and solar spectrum fluctuations and it is suggested that a simple upconverter material is a more favorable strategy.

Cerium dioxide (CeO2) thin films were deposited by atomic layer deposition (ALD) on both Si and TiN substrates. The ALD growth produces CeO2 cubic polycrystalline films on both substrates. However, the films show a preferential orientation along <200> crystallographic direction for CeO2/Si or <111> for CeO2/TiN. In correspondence, we measure a relative concentration of Ce3+ equals to 22.0% in CeO2/Si and around 18% in CeO2/TiN, by X-ray photoelectron spectroscopy. Such values indicate the presence of oxygen vacancies in the films. Our results underline the films differences and similarities between ALD-deposited CeO2 either on Si or TiN substrates, thus extending the knowledge on the CeO2 structural and chemical properties.

The radiation environment of space poses a challenge for electronic systems, in particular flash memory, which contains multiple radiation-sensitive parts. Resistive memory (RRAM) devices have the potential to replace flash memory, functioning as an inherently radiation resistant memory device. Several studies indicate significant radiation resistance in RRAM devices to a broad range of radiation types and doses. In this study, we focus on the effect of displacement damage on tantalum oxide-based RRAM devices, as this form of damage is likely a worst-case scenario. An Ar+ (170 keV) ion beam was used to minimize any contribution from ionization damage, maximizing the effect of displacement damage. Fluence levels were chosen to generate enough oxygen vacancies such that devices in the high resistance state (HRS) would likely switch to the low resistance state (LRS). More than half of devices tested at the highest fluence level (1.43E13 ions/cm2) switched from HRS to LRS. The devices were then switched for 50 set/reset cycles, after which the radiation-induced resistance shift disappeared. These results suggest that device switching may mitigate radiation damage by accelerating oxygen vacancy-interstitial recombination.

Forming-free bipolar resistive switching characteristics in a Vanadium oxide based sandwich structure is observed for the first time. The bottom conducting layer is the common ground electrode for all devices. The top conducting layer acts as an active element with an additional Cr/Al/Cr electrode patterned on its top for making contact. Different from the typical metal/transition metal oxide/metal sandwich structure based resistive memories, our device exhibits a low resistance state (LRS) in its virgin state, and can be switched to a high resistance state (HRS) when a positive bias of +2.5V is applied to the top electrode. Following this, the device can be reset to a LRS when a negative bias of approximately 2.5V is applied. A significant decrease of switching voltages is observed when the diameter of the top contact decreases, indicating an electric field enhanced switching mechanism. Simulation using TCAD confirms that electric field beneath the top metal contact increases due to fringing. The results suggest future applications in low power integrated non-volatile memories.

Photolithographically patterned thin films often possess unwanted spikes along the side edges. These spikes are a significant issue for the development of spinvalve memory, tunnel junction based molecular devices, and micro-electromechanical systems. Here, we report a very simple, economical, and fast way of creating an optimum photoresist profile for the production of spike-free patterned films. This approach is based on performing a soaking step in the positive-photoresist’s developer solution before the UV exposure. However, the success of this method depends on multiple photolithography factors: photoresist thickness (governed by spin speed), soft baking temperature, soaking time in developer, and exposure time. In this paper, we report our systematic experiments to study the effect of these factors by following the L9 experimental scheme of the Taguchi Design of experiment (TDOE) approach. The L9 experiment scheme effectively accommodated the study of four photolithography factors, each with three levels. After performing photolithography as per L9 TDOE scheme, we sputter deposited 20 nm Tantalum to check the side edge profile of the patterned film by atomic force microscope (AFM). We measured the heights of the spikes along the thin film edges. We utilized spike height as the desired property and chose “smaller the better” criteria for the TDOE analysis. TDOE enabled us to understand the relative importance of the parameters, relationship among the parameters, and impact of the various levels of the parameters on the thin film edge profile. TDOE analysis yielded an optimum combination of levels for the four photolithography factors. The optimum combination of photolithography factors included spin speed 4000 rpm, 100 °C soft baking temperature, 60 sec pre-soaking in the developer solution, and 15 sec UV exposure. We validated the TDOE by AFM and observed spike free patterned films. We also made complete tunnel junction devices by utilizing the optimized photolithography factors for the bottom electrode and obtained excellent tunneling behavior. In summary, this study provides a very simple, economical, and fast photolithography approach for creating optimum photoresist profile for the micro-nano scale devices and electromechanical structures.

Thin films of NbO2 are synthesized by oxide molecular-beam epitaxy on (001) MgF2 substrates, which are isostructural (rutile structure) with NbO2. Two growth parameters are systematically varied in order to identify appropriate growth conditions: growth temperature and the partial pressure of O2 during film growth. θ-2θ X-ray diffraction measurements identify two dominant phases in this system at background oxygen pressures in the (0.2–6)×10–7 Torr range: rutile NbO2 is favored at higher growth temperature, while Nb2O5 forms at lower growth temperature. Electrical resistivity measurements were made between 350 K and 675 K on three epitaxial NbO2 films in a nitrogen ambient. These measurements show that NbO2 films grown in higher partial pressures of molecular oxygen have larger temperature-dependent changes in electrical resistivity and higher resistivity at room temperature.

To better stabilize the hydrogen-terminated surface, a diamond based metal-insulator-semiconductor field-effect transistor with Zr-Si-N dielectric layer has been investigated. On the diamond epitaxial layer grown by microwave plasma chemical vapor deposition system, Pd films were patterned as the source and drain electrodes by photolithography and electron beam evaporation methods. Then, a Zr-Si-N dielectric layer and W metal film were fabricated as the gate structure by radio frequency magnetron sputtering technique. The device illustrates p-type depletion mode, in which the threshold voltage, maximum transconductance, drain current maximum, capacitance and dielectric constant were calculated to be 3.0V, 1.27mS/mm, -5.16 mA/mm, 0.275μF/cm2 and 7.8, respectively. The result suggest that Zr-Si-N dielectric layer is shown to have the ability to protect the two-dimensional hole gas.

The aim of this research was to establish a reliable chemical synthesis route to produce plasmonic gold micro-bars. Gold micro-bars have been synthesized through chemical reduction in the presence of surfactants: polyvinylpyrrolidone (PVP) and sodium dodecylsulfonate (SDS), and in the presence of a metal cation. Synthesis was executed by varying the concentration of PVP and SDS, and introducing copper ions, and performing seeded growth. Resulting plasmonic gold micro-bars were viewed under dark field microscopy and scanning electron microscopy (SEM) to visualize the nanoparticle product mixture. Energy Dispersive Spectroscopy (EDS) was used to determine composition of the micro-bars. The results indicate that the copper additive method yields the longest micro-bars.