Research Article
Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
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- 13 June 2014, e1
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Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
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- 13 June 2014, e2
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A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
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- 13 June 2014, e3
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Novel approach to simulation of group-III nitrides growth by MOVPE
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- 13 June 2014, e4
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Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
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- 13 June 2014, e5
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The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
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- 13 June 2014, e6
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Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
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- 13 June 2014, e7
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Growth and Device Performance of GaN Schottky Rectifiers
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- 13 June 2014, e8
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Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes
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- 13 June 2014, e9
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Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
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- 13 June 2014, e10
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Optical phonons and free-carrier effects in MOVPE grown AlxGa1−xN measured by Infrared Ellipsometry
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- 13 June 2014, e11
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Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
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- 13 June 2014, e12
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New buffer sublayers with crystal structure of cubic syngony for growing the heteroepitaxial films of nitride compounds of type AIIIBV on sapphire substrates
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- 13 June 2014, e13
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Strain relaxation in GaN layers grown on porous GaN sublayers
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- 13 June 2014, e14
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Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
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- 13 June 2014, e15
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Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures
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- 13 June 2014, e16
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