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Cited by
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Karpov, S. Yu. Prokofyev, V. G. Yakovlev, E. V. Talalaev, R. A. and Makarov, Yu. N. 1999. Novel approach to simulation of group-III nitrides growth by MOVPE. MRS Internet Journal of Nitride Semiconductor Research, Vol. 4, Issue. 1,
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Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
  • Volume 4, Issue 1
  • R. A. Talalaev (a1), E. V. Yakovlev (a2), S. Yu. Karpov (a2), Yu. N. Makarov (a3), O. Schoen (a4), M. Heuken (a4), G. Strauch (a4) and Holger Juergensen (a4)
  • DOI: https://doi.org/10.1557/S1092578300000612
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Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
  • Volume 4, Issue 1
  • R. A. Talalaev (a1), E. V. Yakovlev (a2), S. Yu. Karpov (a2), Yu. N. Makarov (a3), O. Schoen (a4), M. Heuken (a4), G. Strauch (a4) and Holger Juergensen (a4)
  • DOI: https://doi.org/10.1557/S1092578300000612
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Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
  • Volume 4, Issue 1
  • R. A. Talalaev (a1), E. V. Yakovlev (a2), S. Yu. Karpov (a2), Yu. N. Makarov (a3), O. Schoen (a4), M. Heuken (a4), G. Strauch (a4) and Holger Juergensen (a4)
  • DOI: https://doi.org/10.1557/S1092578300000612
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