N-type Bi2Te3 alloys with different microstructural length scales were prepared by mechanical milling and spark plasma sintering (SPS). The electrical resistivity, thermal conductivity, Seebeck coefficient, carrier concentration, and Hall mobility along and perpendicular to the loading direction were determined and characterized. The SPS sintered bulk disks using nanostructured powder contain high nanoporosity and weak (00l) texture along the loading axis, in contrast to those obtained with coarse powder. The influence of nanoporosity and texture on the thermoelectric and transport properties in the n-type Bi2Te3 alloys is discussed in light of the microstructural characteristics at different length scales.

Ba8Ga16−xGe30+x is the clathrate with the highest thermoelectric figure of merit known to date. However, no p-type material could be obtained by conventional synthesis from the melt. Here we show that the time and cost-effective melt spinning technique can produce Ba8Ga16−xGe30+x in a metastable state, where x can be varied continuously from negative to positive values, resulting in both p- and n-type materials. The quenched phases were characterized by x-ray powder diffraction and transmission electron microscopy. It was surprising that they were perfectly crystalline, with large grain sizes of the order of a micrometer. Temperature dependent measurements of the electrical resistivity, Hall effect, thermopower, and thermal conductivity are presented and discussed in terms of a two-band model.

Gallium-doped zinc oxide spin-coated thin films have been prepared by the sol–gel method. The influence of two solvents, isopropanol and 2-methoxyethanol (2-ME), and two chelating agents, monoethanolamine (MEA) and diethanolamine (DEA), was investigated. X-ray diffraction shows preferential (002) c-axis orientation of the crystallites influenced by the doping content and starting solution composition. Better orientation was obtained with 2-ME as a solvent because of a slower evaporation rate during the spin coating. Better orientation was also obtained using MEA as a stabilizer due to the weaker bonds formed with the Zn2+ ions. Typical film thickness was 550 nm. The transparency of the films was greater than 85% in the entire visible range. A sheet resistance of 68 Ω/□ was obtained for the ZnO film doped with 2 at.% of Ga using 2-ME and MEA as a solvent and stabilizer, respectively. The results show that the denser packing created using a high boiling temperature solvent and a low organic content stabilizer improved the layer’s electrical and optical properties.

Hierarchical ZnO/Si nanoheterostructure was prepared by growing oriented ZnO nanowire bundles onto the top of nanoporous silicon pillar array (NSPA) via a self-catalytic thermal evaporation and vapor-phase transport method. Samples were carefully characterized using field emission scanning electron microscopy, x-ray diffraction, and luminescence spectroscopy. One ultraviolet, one blue-green, and two red emission bands were observed in ZnO/NSPA, and the emission mechanism is discussed by developing a model-based energy band diagram. The origins of the ultraviolet and blue-green photoluminescence (PL) bands were attributed to the emission from the band edge transition and surface states of oxygen vacancies of ZnO, while two red PL bands originated from NSPA and could be well explained by the quantum confinement-luminescence center model. The realization of such all solid and wide wavelength nanodevice might be both meaningful for developing new concept lighting devices and potentially extended to fabricate hierarchical Si-based nanoheterostructures in fabricating other optoelectronic nanodevices.

We demonstrate the formation of non-close-packed binary colloidal structures through a novel layer-by-layer directed self-assembly methodology. In this approach we deposit colloidal suspensions of particle concentration and controlled electrostatic potential onto a planar template with a periodic array of features that is able to trap the particles, nucleating ordered domains with a template-defined symmetry and periodicity that permits subsequent, sequential deposition to produce an ordered heterostructure. Specifically, a silicon template with a hole pattern formed by interference lithography that corresponds to [100] symmetry of a cubic system has been used. At low particle concentrations, and using a Debye length that is on the order of the particle diameter, ordered domains in which polystyrene (PS) particles occupy every other site in the template are formed. The remaining sites on the 2D template are then filled by identically sized silica particles using vertical deposition. This process is repeated to produce a second layer of the same structure. Upon removing the PS particles, a two-layer non-close-packed structure that is a half-unit-cell precursor to the diamond cubic structure is obtained. To our knowledge this is the first demonstration of colloidal self-assembly to obtain a non-close-packed multilayer structure. Challenges that remain in applying the approach to create extended three-dimensional structures are discussed.

Controlling the grain size and morphology of cast cobalt-based components is important for optimizing a component’s in-service properties. This work investigates the role of boron on the grain size of binary cobalt–boron alloys by application of contemporary grain refinement theory. Boron solute is found to refine the width of the columnar grains but fails to promote the columnar to equiaxed transition. The lack of equiaxed grains is attributed to the thermal solidification conditions and a lack of potent nucleant particles. The refinement of the columnar grains with boron solute may be due to a growth restriction mechanism.

The influence of annealing time and annealing temperature under controlled partial pressure of selenium on the in-plane electrical transport properties of specimens of [(PbSe)0.99]1[WSe2]1 turbostratic nanolaminates was studied. The annealing treatments were found to be very effective in reducing carrier concentrations and improving carrier mobility in the annealed films, which is attributed to the reduction of compositional and structural defects. As a result, room temperature Hall mobilities greater than 60 cm2 V−1·s−1 are observed in spite of the small in-plane domain sizes (on the order of 10 nm) that are related to the turbostratic disorder. The technique appears promising for decreasing the concentration of kinetically trapped defects in these and related self-assembled nanostructures, a key challenge to evaluating the expected potential for controlling electrical and thermal transport properties via designed nanostructure in these and related materials.

Urchin-like γ-MnO2 nanostructures, composed of nanowires with diameters in the range 40–70 nm were prepared through the direct reaction between MnSO4 and KClO3 via a mild hydrothermal route. Reaction time and temperature were found to influence both the phase and morphology of as-prepared products. For longer reaction times, the initially formed γ-phase transformed to α-MnO2 nanowires along with the loss of urchin-like morphology. Powder x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy, Fourier transform infrared spectroscopy, and thermogravimetry and differential scanning calorimetry were used to characterize the as-prepared products. On the basis of XRD patterns and SEM images, a possible growth mechanism for the time-dependant morphological evolution of various MnO2 nanostructures has been suggested and discussed.

We have measured at room temperature polarized visible and near-infrared and unpolarized mid-infrared (2.7 μm) emission spectra of Er3+ in LiNbO3 (LN) crystals grown from congruent melts doped with 0.0/0.5, 0.5/0.5, and 1.0/0.5 mol%/mol% In2O3/Er2O3. From the measured emission spectra, the emission and absorption cross section spectral distributions were analyzed based on McCumber theory and discussed in comparison with those spectra of only Er-doped LN bulk material and/or Ti: Er: LN waveguide structure and with the results from the unpolarized absorption measurements. For the 530 and 1530 nm transitions, the cross section value, polarization dependence, and spectral shape all change from the only Er-doped material to the In–Er-codoped crystal and show definite In2O3 doping level effect. The 559, 673, 996, and 1530 nm emission lifetimes were also measured and used to evaluate nonradiative multiphonon relaxation rate. The calculated radiative, measured lifetimes, and multiphonon relaxation rate also show In-codoping effects.