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JMR volume 26 issue 23 Cover and Back matter
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- 06 December 2011, pp. b1-b4
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JMR volume 26 issue 4 Cover and Front matter
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- 11 March 2011, pp. f1-f5
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The effect of solvent and electric field on the size distribution of iron oxide microdots: Exploitation of self-assembly strategies for photoelectrodes
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- 17 January 2011, pp. 254-261
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Artificially nanostructured n-type SiGe bulk thermoelectrics through plasma enhanced growth of alloy nanoparticles from the gas phase
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- 07 June 2011, pp. 1872-1878
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Electrochemically directed two-component monolayers on gold
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- 24 January 2011, pp. 262-267
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JMR volume 26 issue 18 Cover and Front matter
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- 05 October 2011, pp. f1-f5
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JMR volume 26 issue 9 Cover and Back matter
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- 09 May 2011, pp. b1-b2
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Phase transformation in self-assembled Gd silicide nanostructures on Si(001)
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- 30 June 2011, pp. 2276-2281
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JMR volume 26 issue 4 Cover and Back matter
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- 11 March 2011, pp. b1-b6
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JMR volume 26 issue 7 Cover and Back matter
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- 08 April 2011, pp. b1-b4
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JMR volume 26 issue 3 Cover and Back matter
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- 21 February 2011, pp. b1-b4
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Compositional tuning of the strain-induced structural phase transition and of ferromagnetism in Bi1−xBaxFeO3−δ
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- 13 May 2011, pp. 1326-1331
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Sequential self-assembly of micron-scale components with light
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- 17 January 2011, pp. 268-276
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Kinetics of reactions of Ni contact pads with Si nanowires
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- 26 July 2011, pp. 2282-2285
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Back Cover (OBC, IBC) and matter
JMR volume 26 issue 18 Cover and Back matter
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- 05 October 2011, pp. b1-b4
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One-step CVD synthesis of a boron nitride nanotube–iron composite
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- 11 May 2011, pp. 1332-1339
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Enhanced electrical conductivity in Si80Ge20B0.6 alloys with Er addition prepared by spark plasma sintering
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- 07 June 2011, pp. 1879-1885
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Continuum modeling of large-strain deformation modes in gold nanowires
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- 07 June 2011, pp. 2286-2292
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The optical properties of Cu-Ni nanoparticles produced via pulsed laser dewetting of ultrathin films: The effect of nanoparticle size and composition on the plasmon response
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- 01 January 2011, pp. 277-287
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RuIn3-xSnx, RuIn3-xZnx, and Ru1-yIn3—new thermoelectrics based on the semiconductor RuIn3
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- 27 July 2011, pp. 1886-1893
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