The purposes of this study were: (1) to review the preparation and characterization of the intergrowth between goethite and hematite crystals; and (2) to propose a schematic diagram of the epitaxial relationships among three sets of (100) goethite twin crystals associated with the (001) orientation of the hexagonal prism of hematite. The Fe(ClO4)3 solution was prepared and aged at 70°C, which precipitated goethite initially and produced hematite later with prolonged aging. Goethite and hematite aged for 20 days were observed as star-shaped and hexagonal prisms, respectively. The results suggest that hematite could form later using goethite as a template surface. A selected area electron diffraction (SAED) pattern showed the epitaxial relationship among three sets of (100) goethite intergrowth crystals and hexagonal prisms with the (001) orientation of hematite. Goethite can be produced as lath-, X-, K-, or star-shaped crystals on the (100) orientation, depending on the Fe(ClO4)3 concentrations and the addition of HClO4 to Fe solution samples which were aged for a prolonged period at room temperature. The initial solubility products [(Fe3+)(OH–)3] of the sample solution, rather than the nature of the nuclei, are the key factors governing the formation of goethite or hematite. The addition of acids and high concentrations of iron solutions extend the secondary hydrolysis and induction period (IP) and favor the formation of hematite. The index of the SAED pattern of the star-shaped goethite intergrowth twin crystal has a (100) plane parallel to this basal plane and rotates at a 60° angle between two or three sets of lath-shaped goethite crystals, which share the (011) plane and form goethite twins with ‘interpenetrated’ crystal growth. Stereoscopic viewing using Oak Ridge Thermal Ellipsoid Plot (ORTEP) and CrystalMaker software was deployed to explore the relationship and configuration of oxygen atoms between pseudo-hexagonal (100) goethite associated with hexagonal (001) hematite lattice planes. A schematic diagram of the epitaxial relationship between star-shaped (100) goethite, which is acting as a template facilitating later precipitation of (001) hexagonal prisms of hematite on it, is presented.

The transformation process between palygorskite and smectite was studied by examining the morphological and structural relationships between these two minerals in an assemblage from the Meigs Member of the Hawthorne Formation, southern Georgia. Studied samples were related to an alteration horizon with a tan clay unit above and a blue clay unit below. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to study the mechanism of transformation.

From AFM data, both clay units contain euhedral palygorskite fibers. Many fibers are found as parallel intergrowths joined along the [010] direction to form ‘raft-like’ bundles. Degraded fibers, which are common in the tan clay, have a distinctly segmented morphology, suggesting a dissolution texture. Many of the altered palygorskite fibers in the tan clay exhibit an oriented overgrowth of another mineral phase, presumably smectite, displaying a platy morphology. This latter mineral forms along the length of the palygorskite crystals with an interface parallel to {010} of the palygorskite. The resulting grain structures have an elongate ‘wing-like’ morphology.

Imaging by TEM of tan clay material shows smectite lattice-fringe lines intergrown with 2:1 layer ribbon modules (polysomes) of the palygorskite. These features indicate an epitaxial overgrowth of smectite on palygorskite and illustrate the structural relationship between platy overgrowths on fibers observed in AFM data. The epitaxial relationship is described as {010} [001] palygorskite ‖ {010} [001] smectite.

Energy dispersive spectroscopy indicates that the smectite is ferrian montmorillonite. Polysomes of palygorskite fibers involved in these textures commonly vary and polysome widths are consistent with double tetrahedral chains (10.4 Å), triple tetrahedral chains (14.8 Å), quadruple tetrahedral chains (21.7 Å) and quintuple tetrahedral chains (24.5 Å).

The transformation of palygorskite to smectite and the resulting intergrowths will cause variations in bulk physical properties of palygorskite-rich clays. The observation of this transformation in natural samples suggests that this transformation mechanism may be responsible for the lower abundance of palygorskite in Mesozoic and older sediments.

Epitaxial SnSxSe2−x films with tunable band gap energies (1.0–2.2 eV) are of growing interest for photodetectors and 2D heterostructures for nanoscale electronics. In this study, powder vapor transport growth of SnSxSe2−x was investigated on c-plane sapphire and epitaxial graphene (EG)/6H–SiC substrates using tin, sulfur, and selenium powder sources in a heated tube furnace. The SnSxSe2−x composition was controlled by varying the sulfur and selenium source temperatures and the corresponding chalcogen vapor pressure ratio. Raman spectroscopy was used to determine the alloy composition of the films, and the optical properties were characterized using UV-Vis-NIR spectroscopy. SnSxSe2−x grown on sapphire consisted of vertically oriented platelets. By contrast, large-area, planar coalesced SnSxSe2−x films grew on EG with low surface roughness indicative of a van der Waals growth mode. High-resolution X-ray diffraction θ–2θ scans and pole figure analysis confirm that the SnSxSe2−x films are c-axis oriented with epitaxial relation being $\left[ {11\bar{2}0} \right]$ SnSxSe2−x‖$\left[ {10\bar{1}0} \right]$ 6H–SiC.

SiC and Ga2O3 are promising wide band gap semiconductors for applications in power electronics because of their high breakdown electric field and normally off operation. However, lack of a suitable dielectric material that can provide high interfacial quality remains a problem. This can potentially lead to high leakage current and conducting loss. In this work, we present a novel atomic layer deposition process to grow epitaxially MgxCa1−xO dielectric layers on 4H-SiC(0001) and β-Ga2O3$\left( {\bar 201} \right)$ substrates. By tuning the composition of MgxCa1−xO toward the substrate lattice constant, better interfacial epitaxy can be achieved. The interfacial and epitaxy qualities were investigated and confirmed by cross-sectional transmission electron microscopy and X-ray diffraction studies. Mg0.72Ca0.28O film showed the highest epitaxy quality on 4H-SiC(0001) because of its closest lattice match with the substrate. Meanwhile, highly textured Mg0.25Ca0.75O films can be grown on β-Ga2O3$\left( {\bar 201} \right)$ with a preferred orientation of (111).

Wide-bandgap oxide semiconductors have received significant attention as they can produce devices with high output and breakdown voltage. p-Type conductivity control is essential to realize bipolar devices. Therefore, as a rare wide-bandgap p-type oxide semiconductor, NiO (3.7 eV) has garnered considerable attention. In view of the heterojunction device with Ga2O3 (4.5–5.0 eV), a p-type material with a large bandgap is desired. Herein, we report the growth of a Ni1-xMgxO thin film, which has a larger bandgap than NiO, on α-Al2O3 (0001) substrates that was developed using the mist chemical vapor deposition method. The Ni1-xMgxO thin films epitaxially grown on α-Al2O3 substrates showed crystallographic orientation relationships identical to those of NiO thin films. The Mg composition of Ni1-xMgxO was easily controlled by the Mg concentration of the precursor solution. The Ni1-xMgxO thin film with a higher Mg composition had a larger bandgap, and the bandgap reached 3.9 eV with a Ni1-xMgxO thin film with x = 0.28. In contrast to an undoped Ni1-xMgxO thin film showing insulating properties, the Li-doped Ni1-xMgxO thin film had resistivities of 101–105 Ω∙cm depending on the Li precursor concentration, suggesting that Li effectively acts as an acceptor.

In this work, we investigate misfit dislocations in PbTe/PbSe heteroepitaxial systems using the concurrent atomistic–continuum (CAC) method. A potential model containing the long-range Coulombic interaction and short-range Buckingham potential is developed for the system. By considering the minimum potential energy of relaxed interface structures for various initial conditions and PbTe layer thicknesses, the equilibrium structure of misfit dislocations and the dislocation spacings in PbTe/PbSe(001) heteroepitaxial thin films are obtained as a function of the PbTe layer thicknesses grown on a PbSe substrate. The critical layer thickness above which misfit dislocations inevitably form, the structure of the misfit dislocations at the interfaces, and the dependence of average dislocation spacing on PbTe layer thickness are obtained and discussed. The simulation results provide an explanation for the narrowing of the spread of the distribution of misfit dislocation spacing as layer thickness increases in PbTe/PbSe(001) heteroepitaxy.

Over the past three years, my colleagues and I have embarked on an exciting journey into electric-field control of magnetism, parts of which we describe in this article. What we present to you is something that we believe is extremely exciting from both a fundamental science and applications perspective, and has the potential to revolutionize our world. Needless to say, this will require a lot of new innovations, both in the fundamental science arena as well as translating scientific discoveries into real applications. We hope this article will help spur more research in electric-field control of magnetism within the broad materials community.

As advanced CMOS scaling with FinFETs continues beyond the 10/7nm nodes, contact resistance (Rc) remains a dominant component affecting device performance. The FinFET Source/Drain (S/D) contact area has become smaller with fin pitch scaling, resulting in drastically increased Rc. To achieve higher drive currents and fully realize the performance gain from FinFET architectural changes, it is critical to continue to reduce contact resistivity (ρc) < 1.0x10-9 Ω.cm2 for both NMOS and PMOS. In this paper, we review the recent trends for ρc reduction for advanced CMOS devices and discuss approaches that have demonstrated reduction in ρc, such as in-situ heavily doped epitaxial films for S/D, advanced ion implantation and laser anneals. The implant techniques include pre-amorphization implants (PAI), dopant boosting implants, cryogenic (-100°C) implants for damage engineering and plasma doping (PLAD) for conformal doping of high aspect ratio (HAR) contacts. With such high levels of doping from epi and implants, advanced laser anneals are key for epitaxial regrowth and formation of metastable alloys for dopant supersaturation or segregation in top layers. Millisecond laser anneal (MSA) improves dopant activation and nanosecond laser anneal (NLA) permits superactivation, and both have become key enablers for ρc reduction. This paper also reviews two alternative contact approaches: dual silicide scheme and wrap-around contact (WAC), as potential pathways to further reduce Rc for advanced CMOS nodes.

Unlike the conventional layer by layer growth ,three dimensional growth experiments of SiC single crystal by the Chemical Particle Deposition (CPD)method were carried out both on the polar and nonpolar plane of the SiC seed crystal. The comparison of the morphology of the grown crystals on both samples indicated that the electric field formed by the seed crystal strongly effected the diffusion of the supplied Si and C atoms and their compounds to grow the epitaxial crystal. In spite of the low ionicity of Si-C bonds, this remarkable effect of the electric field on the three dimensional crystal growth mechanism in the CPD method strongly suggested its contribution to the ordering of the stacked layers with its long working range, beyond the deformed boundary layers between the seed surface and the grown crystal.

Effects of nitrogen impurity on ZnO crystal growth on Si substrates have been investigated. The quantitative analysis on the surface morphology deriving height-height correlation function indicates that adsorbed nitrogen atoms suppress the secondary nucleation and enhance adatom migration. The resultant films have smooth surface as well as large grain size up to 24 nm even for small thickness of 10 nm. ZnO films fabricated by using such films as buffer layers possess high crystal quality, where the full width at half maximum of (002) rocking curve is 0.68°, one-fourth of that for films fabricated without nitrogen.

We report on the time-resolved measurements of photocarrier dynamics in InGaAs/InAlAs superlattices with epitaxial stresses in a wide range of optical pump fluences. We demonstrated that the contribution of free carrier absorption and two-photon absorption to the carrier dynamics decreases with an increase of epitaxial stresses. The lowest relaxation times of 1.7 and 8.3 ps, respectively attributed to carrier trapping and carrier recombination, were obtained for the structure with maximum epitaxial stresses.

We have recently developed a novel semiconductor, (ZnO)x(InN)1-x (abbreviated to ZION). In this study, we have succeeded in direct epitaxial growth of ZION films on 19–21%-lattice-mismatched c-plane sapphire by radio-frequency (RF) magnetron sputtering. X-ray diffraction analysis showed that there is no epitaxial relationship between ZION films fabricated at room-temperature (RT) and the sapphire substrates, while the films fabricated at 450oC grow epitaxially on the sapphire substrates. From the analysis of time evolution of the surface morphology, the process for the epitaxial growth of ZION on sapphire is found to consist of three stages. They are (i) initial nucleation of ZION crystallites with crystal axis aligned to the sapphire substrate, (ii) island growth from the initially formed nuclei and subsequent nucleation (secondary nucleation) of ZION crystallites, and (iii) lateral growth of ZION islands originated from initially formed nuclei. On the other hand, non-epitaxial ZION films fabricated at RT just grow in 3D mode. From these results, we conclude that the substrate temperature is the key to control of nucleation and subsequent epitaxial growth of ZION films on the lattice-mismatched substrate.

The self-learning kinetic Monte Carlo method has been shown to be suitable for examining the temporal and spatial evolution of adatom islands on the (111) surface of several fcc metals, unbiased by diffusion processes chosen a priori. A pattern-recognition scheme and a diffusion path finder scheme enable collection of a large database of diffusion processes and their energetics. A variety of mechanisms involving single and multiple atoms, and concerted island motion are uncovered in long-time simulations. In this contribution, after reviewing the methodology, we present results comparing the diffusion kinetics of two sets of homo-epitaxial and hetero-epitaxial systems: small (2–8 atom) Pd and Ag islands on the respective (111) surfaces and small Cu islands on Ni(111) and Ni islands on Cu(111). We trace the dominance of concerted motion in Pd/Pd(111) and Ni/Cu(111) and competition among concerted, multiatom and single-atom processes in Ag/Ag(111) and Cu/Ni(111) to the strength of the lateral interaction among adatoms in these systems.

Overgrowths of whiskers of hedenbergite (Ca(Fe2+,Mg)Si2O6) on the hydrous pyroxenoid babingtonite (Ca2Fe2+Fe3+[Si5O14(OH)]) have been observed at Arvigo in Switzerland and Kreimbach/Kaulbach in Germany, and we have studied them with transmission electron microscopy in order to understand their structural relationships and formation. The boundaries between babingtonite and hedenbergite are sharply defined, and the two minerals are in direct contact with no additional phases present. The relationships of babingtonite (Bab) and hedenbergite (Hd) were determined as Bab[100]//Hd[112] in the Arvigo specimen and Bab[$\bar 1$00]//Hd[1$\bar 1$2] in the Kreimbach/Kaulbach specimen. Diffraction derived from Bab(031) and Hd(02$\bar 1$) in the Arvigo samples and Bab(031) and Hd(021) in the Kreimbach/Kaulbach samples were observed in identical positions. The reciprocity between the babingtonite and hedenbergite structures is governed by the direction of the SiO4-tetrahedral chains, and the related configuration of octahedra. Thus, hedenbergite is apparently an epitaxial phase grown on a base of {010} plates of babingtonite. The defined orientation relationship is also consistent with that shown in topotaxial intergrowths of other clinopyroxenes and pyroxenoids. The topotaxial intergrowths may result from diffusion-controlled solid-state reactions, whereas rapid whisker growth is characteristic of supersaturated solutions or a vapour medium. The epitaxial growth of hedenbergite whiskers on babingtonite with an abrupt but coherent change of structure at the interface represents an ideal example where the similar chemical compositions of host and guest contribute strongly to the close structural relationship.

We report on the exploration of perpendicular exchange bias in iron platinum/nickel oxide (FePt/NiO) bilayer thin films grown using pulsed laser deposition (PLD) on MgO (100) substrates. Exchange bias is an important property for giant magnetoresistance, and, as such has promise for applications in spin valves, magnetic sensors and magnetic random access memory. The magnetic L10 phase of FePt is known for having high perpendicular magnetic anisotropy, tunable coercivity/grain size and large magnetic storage density. The FePt layer was first deposited directly on MgO, followed by the deposition of the NiO layer on top of the FePt layer. The coercivity of the L10 FePt layer was tuned during growth to form a hard or soft magnetic layer. The FePt/NiO thin films grown for this study exhibit perpendicular exchange bias at 5K, as quantified using our SQUID measurements. XRD confirms parallel plane ordering between the MgO (200), FePt (002) and NiO (111) atomic planes while cross sectional TEM confirms the epitaxial growth of L10-FePt(001)<100>//MgO(100)<001> and the preferential growth of NiO on top of the FePt. Films of only FePt were grown to examine the surface architecture of the ferromagnetic layer and thus the interface of the FePt/NiO bilayer. The results from our XRD, TEM and magnetometry characterization of the FePt films and FePt/NiO bilayer thin films will be discussed.

BiFeO3 (BFO) is the most studied room temperature multiferroic compound. In this work we demonstrate a template assisted growth process through which the growth strain is controlled to achieve required phase of BFO. Growth of (∼20nm) fully strained tetragonal (T), rhombohedral (R) and mixed phase of T and R of Bismuth ferrite (BiFeO3) was achieved by varying the thickness of the template layer. The different phases were confirmed by using high resolution x-ray diffractions studies. The conductivity map of all the three phases were carried out using an atomic force microscope operating in conductive mode. Tip induced surface defect migration within a given grain was observed in pure phases and the conductivity map confirmed the same. The room temperature resistivity is found to be decreasing systematically from 1.1×106 Ωm , 935×105 Ωm and 1.16×104 Ωm respectively for tetragonal, mixed phase and rhombohedral phase BFO. In the case of mixed phase both the nano- scale and macroscopic leakage current studies show low conductivity, which could be due to the increased pinning sites that increases the energy barrier for the defect migration. The local nano-scale measurements and conductivity mapping corroborates well with the macroscopic studies.

The epitaxial growth of two-dimensional oxide layers on metal surfaces is examined in view of the 1949 van der Merwe proposition that epitaxy requires a pseudomorphic monolayer. It is argued that this limitation is relaxed in the 2-D case and that ordered oxide phases can grow out of a variety of interface scenarios, ranging from pseudomorphic to incommensurate. Prototypical examples of binary and ternary oxides supported on noble metal surfaces are presented, and the structural peculiarities of 2-D oxide phases are emphasized. The usually strong coupling at the oxide–metal interface leads to the stabilization of novel structure concepts that are not encountered in the, respective, bulk phases. The structural flexibility of 2-D lattices is discussed, and their ability to accommodate strain in generating novel 2-D oxide phases is emphasized. In the case of weakly coupled systems, it is reported that more subtle interactions at the interface can create periodic nanoscale morphologies and particular growth patterns in subsequent layers.

The kinetic relaxation pathways for strained heteroepitaxial films are mapped using a process simulator that integrates experimental and model descriptions of the energetic and kinetic parameters that define the nucleation, propagation, and interaction of strain relieving dislocations. This paper focuses on Ge x Si1−x /Si(100), but the methodologies described should be extendible to other systems. The kinetic pathways for strain evolution are plotted for film growth as functions of the primary kinetic parameters: growth temperature, growth rate, and initial lattice mismatch, generating relaxation surfaces for parameter pairs. Sensitivity analyses are presented of how deviations from mean parameters disperse the resultant relaxation surfaces. Finally, multi-parameter “fingerprinting” of the dislocation array is shown to illustrate how fundamental kinetic mechanisms—particularly dislocation nucleation mechanisms—define the final dislocation array. The overarching goal is to establish a robust framework for predicting, interrogating, and optimizing strain relaxation pathways and underlying mechanisms, for misfit dislocations in strained heteroepitaxial films.

Integration of photonic devices on silicon (Si) substrates is a key method in enabling large scale manufacturing of Si-based photonic–electronic circuits for next generation systems with high performance, small form factor, low power consumption, and low cost. Germanium (Ge) is a promising material due to its pseudo-direct bandgap and its compatibility with Si-CMOS processing. In this article, we present our recent progress on achieving high quality germanium-on-silicon (Ge/Si) materials. Subsequently, the performance of various functional devices such as photodetectors, lasers, waveguides, and sensors that are fabricated on the Ge/Si platform are discussed. Some possible future works such as the incorporation of tin (Sn) into Ge will be proposed. Finally, some applications based on a fully monolithic integrated photonic–electronic chip on an Si platform will be highlighted at the end of this article.

New developments in manufacturing and automation, from three-dimensional printing to the “Internet of things,” signify dramatic changes in our society. The push toward quantum materials is driving device fabrication toward atomic precision. Recent results suggest that scanning transmission electron microscopy (STEM) with sub-angstrom scale beams could offer a solution. However, a detailed theoretical understanding of the interaction of the electron beam with solids is needed to form a basis for new technology. This article summarizes the existing literature on electron-beam interactions with solids with a focus on irreversible transformation. We further suggest that the theoretical framework of a two-temperature model developed for fast ion damage in solids could be applicable to predicting the effects of fast electrons. Recent results from STEM-directed epitaxial growth on crystalline–amorphous interfaces are discussed in detail. Finally, perspectives on the development of this field in the near future are offered.