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NV centers in silicon carbide: from theoretical predictions to experimental observation
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- Journal:
- MRS Communications / Volume 7 / Issue 3 / September 2017
- Published online by Cambridge University Press:
- 31 July 2017, pp. 591-594
- Print publication:
- September 2017
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Degradation of Intersubband Transitions in Electron Irradiated GaAs/AlGaAs Multiple Quantum Wells With Superlattice Barriers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 607 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 503
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- 1999
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Bulk Photorefractive Semiconductors
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- Journal:
- MRS Bulletin / Volume 19 / Issue 3 / March 1994
- Published online by Cambridge University Press:
- 29 November 2013, pp. 39-43
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- March 1994
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The Metastability of the EL2 and DX Defects in GaAs and 3-5 Alloys
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- Journal:
- MRS Online Proceedings Library Archive / Volume 163 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 799
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- 1989
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DX Center in GaAs-GaAlAs Superlattices Suppression and Identification
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- Journal:
- MRS Online Proceedings Library Archive / Volume 148 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 433
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- 1989
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The Role of EL2 for the Mobility-Lifetime Product of Photoexcited Electrons in GaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 163 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 837
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- 1989
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Electric Field Enhancement of Electron Emission from DX Centers and Consequences
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- Journal:
- MRS Online Proceedings Library Archive / Volume 163 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 747
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- 1989
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EPR Studies of DX Center Related Paramagnetic States in Ga0.69 Al0.31 As:Sn
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- Journal:
- MRS Online Proceedings Library Archive / Volume 148 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 439
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- 1989
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