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DX Center in GaAs-GaAlAs Superlattices Suppression and Identification

Published online by Cambridge University Press:  25 February 2011

S.L. Feng ,
J.C. Bourgoin ,
H.J. von Bardeleben ,
E. Barbier ,
J.P. Hirtz  and
F. Mollot
S.L. Feng
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, Centre National de la Recherche Scientifiquea, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
J.C. Bourgoin
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, Centre National de la Recherche Scientifiquea, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
H.J. von Bardeleben
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, Centre National de la Recherche Scientifiquea, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
E. Barbier
Affiliation:
Thompson-L.C.R., B.P. 10, 91401 Orsay, France
J.P. Hirtz
Affiliation:
Thompson-L.C.R., B.P. 10, 91401 Orsay, France
F. Mollot
Affiliation:
Laboratoire de Microstructures et de Microélectronique, Centre National de la Recherche Scientifique, 196 avenue H. Ravera, 92220 Bagneux, France
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Abstract

The DX center has been studied by Deep Level Transient Spectroscopy in series of GaAs-Ga1-xAlxAs (x = 0.3) and GaAs-AlAs short period superlattices. The existence or not of this center can be understood if its energy level is linked to the L miniband. This suggest a possible way to suppress them by using specific superlattices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 433
Copyright
Copyright © Materials Research Society 1989

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References

1. Bourgoin, J.C. and Lannoo, M. in Properties of Impurity States in Super-lattice Semiconductors, edited by Feng, C.Y., Batra, I.P. and Ciraci, C. (Plenum Press, New York, 1988), chap. 7.Google Scholar
2. Lang, D.V. in Deep Centers in Semiconductors, edited by Pantelides, S.T. (Gordon & Breach, New York, 1986), chap. 7.Google Scholar
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