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Degradation of Intersubband Transitions in Electron Irradiated GaAs/AlGaAs Multiple Quantum Wells With Superlattice Barriers

Published online by Cambridge University Press:  10 February 2011

C.P. Morath ,
M.O. Manasreh ,
H.S. Gingrich ,
H.J. von Bardeleben ,
P. Ballet ,
J.B. Smathers  and
G.J. Salamo
C.P. Morath
Affiliation:
Air Force Research Lab (AFRL/VSSS), 3500 Aberdeen Ave, SE, Bldg. 426, Kirtland AFB, NM 87117-5776, USA
M.O. Manasreh
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131
H.S. Gingrich
Affiliation:
Air Force Research Lab (AFRL/VSSS), 3500 Aberdeen Ave, SE, Bldg. 426, Kirtland AFB, NM 87117-5776, USA
H.J. von Bardeleben
Affiliation:
Groupe de Physique des Solides, Universites Paris 6 and 7, Place Jussieu, F-75251 Paris, Cedex 05, France
P. Ballet
Affiliation:
Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA
J.B. Smathers
Affiliation:
Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA
G.J. Salamo
Affiliation:
Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA
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Abstract

Intersubband transitions in GaAs/AIGaAs multiple quantum wells (MQWs) are studied as a function of 2 MeV electron irradiation doses using the optical absorption technique. The MQW structure was designed with a 5 period Al.4Ga.6As/GaAs superlattice barrier, and two transitions are observed in the spectra. These transitions occur from the ground state to the first excited state and to the miniband formed by the superlattice barrier. The total integrated area from both transition spectra are studied as a function of temperature and electron irradiation dose. For the ground state to first excited state transition the total integrated area decreases exponentially as the irradiation dose increases, which could be explained in terms of the trapping of the 2D-electron gas in the quantum well by the irradiation induced defects. In comparison, the intensity of the ground state to miniband transition was found to increase exponentially as a function of the irradiation dose. Two possible explanations for this behavior are suggested. The temperature dependence of the integrated area of both transitions is also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 503
Copyright
Copyright © Materials Research Society 2000

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