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The Metastability of the EL2 and DX Defects in GaAs and 3-5 Alloys

Published online by Cambridge University Press:  25 February 2011

H.J. von Bardeleben  and
J.C. Bourgoin
H.J. von Bardeleben
Affiliation:
Groupe de Physique des Solides de l’École Normale Supérieure, Centre National de la Recherche Scientifique°, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France.
J.C. Bourgoin
Affiliation:
Groupe de Physique des Solides de l’École Normale Supérieure, Centre National de la Recherche Scientifique°, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France.
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Abstract

The metastability of the EL2 and DX defects in GaAs and Ga1-x AlxAs alloys is discussed in the context of recent hydrostatic pressure and photo-EPR results. A unified model is presented based on the metastable trapping of carriers in excited effective-mass (EM) states derived from secondary conduction band (CB) minima. The metastability is attributed to small lattice relaxation effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 799
Copyright
Copyright © Materials Research Society 1990

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