Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-26T03:30:51.916Z Has data issue: false hasContentIssue false

Bulk Photorefractive Semiconductors

Published online by Cambridge University Press:  29 November 2013

Get access

Extract

The photorefractive (PR) effect has been studied for more than 25 years and many applications for optical signal processing such as correlation, real-time holography, dynamic interconnections, and optical memories have been developed. The main focus of study for the PR effect has been oxides (ferroelectrics and sillenites) in which the useful spectral range lies in the visible. Applications for telecommunication systems and eye-safe devices have required extending the spectral range into the near infrared (1.0 to 1.5 μm), and so the exploration of different materials. It has been shown that the bulk semi-insulating III-V semiconductors GaAs and InP, and more recently the II-VI compound CdTe, were efficient materials for this spectral range. III-V materials offer the advantage of availability as bulk semiinsulating materials of high crystalline perfection and homogeneity regarding their electrical properties due to their importance as substrate materials in micro and optoelectronic technology. However, these materials have not been optimized for PR applications, so quantitative analyses of PR experiments related to the specific material defect properties are necessary for further developments. It has equally been shown that the PR effect can be used as an efficient tool for materials characterization.

Type
Photorefractive Materials
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Ashkin, A., Boyd, G.D., Dziedzic, J.M., Smith, R.G., Ballman, A.A., Levinstein, H.J., and Nassau, K., Appl. Phys. Lett. 9 (1966) p. 72.CrossRefGoogle Scholar
2.Günter, P. and Huignard, J.P., Photorefractive Materials and Their Applications I and II Vol. 61–62 (Springer-Verlag, New York 1988).Google Scholar
3.Glass, A.M., Johnson, A.M., Olson, D.H., Simpson, W., and Ballman, A.A., Appl. Phys. Lett. 44 (1984) p. 948.CrossRefGoogle Scholar
4.Bylsma, R.B., Bridenbaugh, P.M., Olson, D.H., and Glass, A.M., Appl. Phys. Lett. 51 (1987) p. 889.CrossRefGoogle Scholar
5.Klein, M.B., Opt. Lett. 9 (1984) p. 350.CrossRefGoogle Scholar
6.Bylsma, R.B., Olson, D.H., and Glass, A.M., Appl. Phys. Lett. 52 (1988) p. 1083.CrossRefGoogle Scholar
7.Jarasiunas, K., Delaye, Ph., and Roosen, G., Phys. Status Solidi B 175 (1993) p. 445.CrossRefGoogle Scholar
8.Kukhtarev, N.V., Markov, V.B., Odulov, S.G., Soskin, M.S., and Vinetskii, V.L., Ferroelectrics 22 (1979) p. 949 and 961.CrossRefGoogle Scholar
9.Strohkendl, F.P., Jonathan, J.M.C., and Hellwarth, R.W., Opt. Lett. 11 (1986) p. 312.CrossRefGoogle Scholar
10.Kogelnik, H., Bell Sys. Tech. J. 48 (1969) p. 2909.CrossRefGoogle Scholar
11.Fabre, J.C., Jonathan, J.M.C., and Roosen, G., Opt. Commun. 65 (1988) p. 257.CrossRefGoogle Scholar
12.Martin, G.M., Farges, J.P., Jacob, G., Hallais, J.P., and Poiblaud, G., J. Appl. Phys. 51 (1980) p. 2840.CrossRefGoogle Scholar
13.Johnson, E.J., Kafalas, J.A., and Davies, R.W., J. Appl. Phys. 54 (1983) p. 204.CrossRefGoogle Scholar
14. See for example: Bourgoin, J.C., von Bardeleben, H.J., and Stiévenard, D., J. Appl. Phys. 64 (1988) p. R65.CrossRefGoogle Scholar
15.Kaminska, M., Re. Phys. Appl. 23 (1988) p. 793.CrossRefGoogle Scholar
16.Silverberg, P., Omling, P., and Samuelson, L., in Reference 6, p. 1689.Google Scholar
17.Zach, F.X., Winnacker, A., Jpn. J. Appl. Phys. 28 (1989) p. 6.CrossRefGoogle Scholar
18.Wagner, R.J., Krebs, J.J., Strauss, G.H., and White, A.M.. Solid State Commun. 36 (1980) p. 15.CrossRefGoogle Scholar
19.Marple, D.T.F., J. Appl. Phys. 35 (1964) p. 1241.CrossRefGoogle Scholar
20.Berseth, C.A., Wuethrich, C., and Reinhart, F.K., J. Appl. Phys. 71 (1992) p. 2821.CrossRefGoogle Scholar
21.Delaye, Ph., von Bardeleben, H.J., and Roosen, G., in Digest of Topical Meeting on Photorefractive Materials, Effects and Devices IV (August 6–10, 1993, Kiev) Paper FrC02.Google Scholar
22.Cheng, L.J., Lagowski, J., Rau, M.F., and Wang, F.C., Radiation Effect and Defect in Solid 111 (1989) p. 37.CrossRefGoogle Scholar
23.Imbert, B., Rajbenbach, H., Mallick, S., Herriau, J.P., and Huignard, J.P., Opt. Lett. 13 (1988) p. 327.CrossRefGoogle Scholar
24.Delaye, Ph., Halter, P.U., and Roosen, G., J. Opt. Soc. Am. B 7 (1990) p. 2268.CrossRefGoogle Scholar
25.Picoli, G., Gravey, P., Ozkul, C., and Vieux, V., J. Appl. Phys. 66 (1989) p. 3798.CrossRefGoogle Scholar
26.Launay, J.C., Mazoyer, V., Tapiero, M., Zielinger, J.P., Guellil, Z., Delaye, Ph., and Roosen, G., Appl. Phys. A 55 (1992) p. 33.CrossRefGoogle Scholar
27.Ziari, M., Steier, W.H., Ranon, P.M., Klein, M.B., and Trivedi, S., J. Opt. Soc. Am. B 9 (1992) p. 1461.CrossRefGoogle Scholar
28.Suzuki, N. and Tada, K., Jpn. J. Appl. Phys. 23 (1984) p. 291.CrossRefGoogle Scholar
29.Marple, D.T.F., in Reference 19, p. 539.Google Scholar
30.Liu, D.T.H., Cheng, L.J., Rau, M.F., and Wang, F.C., Appl. Phys. Lett. 53 (1988) p. 1369.CrossRefGoogle Scholar
31.Ozkul, C., Picoli, G., Gravey, P., and Wolffer, N., Appl. Opt. 29 (1990) p. 2711.CrossRefGoogle Scholar
32.Belaud, Y., Delaye, Ph., Launay, J.C., and Roosen, G., Opt. Commun. (1993) in press.Google Scholar
33.Kuroda, K., Okazaki, Y., Shimura, T., Okamura, H., Chihara, M., Itoh, M., and Ogura, I., Opt. Lett. 15 (1990) p. 1197.CrossRefGoogle Scholar
34.Ziari, M., Steier, W. H., Ranon, P.M., Trivedi, S., and Kiein, M.B., Appl. Phys. Lett. 60 (1992) p. 1052.CrossRefGoogle Scholar
35.Tayebati, P., Kumar, J., and Scott, S., Appl. Phys. Lett. 59 (1991) p. 3366.CrossRefGoogle Scholar
36.Ziari, M., Steier, W.H., Klein, M.B., and Trivedi, S., in Digest of Topical Meeting on Photorefractive Materials, Effects and Devices III (August 1991, Beverly, MA) Paper TuA6.Google Scholar
37.von Bardeleben, H.J., Launay, J.C., and Mazoyer, V., Appl. Phys. Lett. 63 (1993) p. 1140.CrossRefGoogle Scholar
38.Valley, G.C., Rajbenbach, H., and von Bardeleben, H.J., Appl. Phys. Lett. 56 (1990) p. 364.CrossRefGoogle Scholar
39.Kaminska, M., Parsey, J.M., Lagowski, J., and Gatos, H.C., Appl. Phys. Lett. 41 (1982) p. 989.CrossRefGoogle Scholar
40.Weiss, S., Sternklar, S., and Fischer, B., Opt. Lett. 12 (1987) p. 114.CrossRefGoogle Scholar