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Study of TiN nanodisks with regard to application for Heat-AssistedMagnetic Recording
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- 12 January 2016, pp. 317-326
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Operations, Charge Transport, and Random Telegraph Noise inHfOx Resistive Random Access Memory: a Multi-scale ModelingStudy
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- 12 January 2016, pp. 327-338
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In-line Monitoring of Grain Size Distribution of Channel Poly Si usedin 3D NAND Flash Memory Devices using Multiwavelength RamanSpectroscopy
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- 18 January 2016, pp. 339-348
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Stress Induced Vacancy Clustering Mechanism of Resistive Switching inHafnium Oxides
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- 01 February 2016, pp. 349-355
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Surface Smoothing Effects of Materials Used in Underlayer of MTJ withGas Cluster Ion Beams
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- 01 February 2016, pp. 357-362
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Effects of Defect on Ferroelectric Stability in PbTiO3Thin Films
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- 19 February 2016, pp. 363-368
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Reliability of the Properties of (Pb,La)(Zr,Ti)O3Capacitors with Non–noble Metal Oxide Electrodes stored in anH2 Atmosphere
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- 19 February 2016, pp. 369-374
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Conductance switching behavior of GeTe/Sb2Te3superlattice upon hot-electron injection: a scanning probe microscopystudy
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- 19 February 2016, pp. 375-380
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Front Cover (OFC, IFC) and matter
ADV volume 1 issue 5 Cover and Front matter
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- 30 March 2016, pp. f1-f3
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