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Conductance switching behavior of GeTe/Sb2Te3superlattice upon hot-electron injection: a scanning probe microscopystudy
Published online by Cambridge University Press: 19 February 2016
Abstract
Topological (GeTe)/(Sb2Te3) superlattices (SL) are ofpractical interest for memory applications because of different mechanism ofelectric conductance switching in the crystalline phase. In the work, electricalswitching behavior of individual SL grains was examined employing a multimodescanning probe microscope (MSPM) in a lithography mode at room temperature.Using programmed bias voltage with different amplitude and pulse duration, weobserved the position-dependent variations of the switching voltage and thecurrent injection delay for [(GeTe)2(Sb2Te3)]4 SLs on Si(100). The results sheda light on the role of electric field and hot-electron injection on the SLconductance switching.
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- Copyright © Materials Research Society 2016