This paper presents a design method of internally-matched packaged GaN high electron mobility transistors (HEMTs) for achieving not only high-efficiency and high-power performances but also a wide bandwidth and insensitivity to harmonic terminations in the S-band. The package and its internal matching networks are synthesized to confine the second harmonic impedances seen by the GaN die to high-efficiency regions whatever the harmonic impedances presented outside the package. This paper reports the design of a packaged GaN HEMT achieving 78% of power-added-efficiency (PAE) and 25 W of output power at 2.5 GHz. A packaged GaN power bar is also reported with the addition of fundamental matching networks inside the package. In 50 Ω environment, the packaged GaN power bar provided more than 56% of PAE from 2.5 to 3.1 GHz and was desensitized to harmonic load variations with less than two points of PAE variation when a load-pull is performed at second harmonic frequencies outside the package.

This paper presents a new behavioral model for power amplifiers that accomplishes the capture of nonlinear low-frequency memory effects with reduced complexity and superior precision. It has been extensively evaluated with a commercial amplifier using wideband code-division multiple-access (WCDMA)-like modulated data with symbol rates in the range of 2 ksym/s to 1 Msym/s, and it is shown that the first dynamic reduction of the proposed model is successfully compared with other highly efficient methods in terms of complexity and generalization capacity.

A compact, microstrip, two-stage, room temperature, single-ended low noise amplifier (LNA) is designed using commercial components for Aperture Tile in Focus (APERTIF), a square kilometre array (SKA) pathfinder project. Various techniques are investigated to insert inductance between the source pad of the package and the ground plane of the printed circuit board (PCB), with the chosen design able to do this using standard manufacturing techniques. The desired noise temperature of 25 K (noise figure (NF) of 0.36 dB) is met over the 1.0–1.8 GHz band, with an input return loss better than 10 dB.

In this paper, the design and the measurements of three-dimensional through silicon vias (TSVs) based-integrated solenoids embedded within high-resistive silicon is presented. Prior to silicon implementation, a rigorous theoretical analysis is proposed to put in obviousness the advantages of using such coil architecture for L and S band applications. This analysis, demonstrates a clear reduction of the footprint passive function lying on the external substrate together with a reduced capacitive coupling with the local environment. Two-port radio frequency measurements have been performed in a wide-frequency range (100 MHz – 50 GHz) in order to support the theoretical investigations. Solenoids exhibit high-quality factors below 4 GHz – Q = 25 @ 2 GHz for a 800 pH device – and clearly outperforms classical planar architecture considered in most of the integrated circuit processes. Two different modeling approaches (compact modeling and EM modeling) are then proposed in order to speed-up their design implementation in a typical CAD design flow. Based on the available data, a good agreement is shown between and simulated data.

This paper presents four continuously variable W-band phase shifters in terms of design, fabrication, and radiofrequency (RF) characterization. They are based on low-loss ridge waveguide resonators tuned by electrostatically actuated highly conductive rigid fingers with measured variable deflection between 0.3° and 8.25° (at a control voltage of 0–27.5 V). A transmission-type phase shifter based on a tunable highly coupled resonator has been manufactured and measured. It shows a maximum figure of merit (FOM) of 19.5°/dB and a transmission phase variation of 70° at 98.4 GHz. The FOM and the transmission phase shift are increased to 55°/dB and 134°, respectively, by the effective coupling of two tunable resonances at the same device with a single tuning element. The FOM can be further improved for a tunable reflective-type phase shifter, consisting of a transmission-type phase shifter in series with a passive resonator and a waveguide short. Such a reflective-type phase shifter has been built and tested. It shows a maximum FOM of 101°/dB at 107.4 GHz. Here, the maximum phase shift varied between 0° and 377° for fingers deflections between 0.3° and 8.25°.

In this paper, a new way of obtaining a band rejection in a ultra wideband (UWB) filter using a uniplanar Electromagnetic bandgap (EBG) structure is reported. The EBG structure has a bandgap centered at 6.69 GHz which is almost 38% lower compared with the conventional uniplanar EBG of same dimensions. A one-dimensional EBG structure coupled with a microstrip line provides a narrow bandgap, which is used in obtaining a notch in the UWB filter. Single notch UWB filters with variations in the placement of EBG are fabricated producing a notch centered at 5.19 GHz (wireless local area network (WLAN)). A dual notch (5.16 and 8.24 GHz (satellite communication)) UWB filter is also fabricated with two different unit cell EBGs'. Switchable and tunable notch band UWB filters are proposed.

A proximity-fed complementary Sierpinski gasket fractal with equilateral triangular shape resonator in multilayer structure to achieve dual-band behavior for WiMAX and WLAN applications has been proposed. An electromagnetic coupled stacked structure of two different patches operating at two frequencies (3.5 GHz WiMAX and 5.8 GHz wireless LAN) has been designed for dual-band wireless applications. Proposed antenna was simulated using CST Microwave Studio based on the finite integration technique (FIT) with perfect boundary approximation (PBA). Finally, the proposed antenna was fabricated and some performance parameters were measured to validate against simulation results. The design procedures and employed tuning techniques to achieve the desired performance are presented.

This paper presents a comprehensive study on the design of a 30 GHz, circularly polarized (CP), single horn-fed, metallic electromagnetic band gap (EBG) antenna. Three different approaches have been studied in order to create a 20 dBi antenna with an axial ratio (AR) lower than 1 dB over a 500 MHz bandwidth. Based on theoretical and experimental results, a conclusion is given on the best solution to obtain the desired characteristics. Perspectives and guidelines are also given for the design of multi-feed EBG antenna as a reflector focal feed for Ka-Band Space Applications.

Time-domain characterization of a microstrip patch antenna with circular corner truncation to achieve polarization reconfigurability is presented. By applying zero bias, forward bias, and reverse bias to the four PIN diodes, the antenna can radiate with linear polarization (LP), right hand circular polarization (RHCP), and left hand circular polarization (LHCP). The circular cuts reduce centre-frequency shift from linear to circularly polarized states, compared with conventional straight cuts. Time-domain simulation and measurement are carried out to show the switching characteristics of the proposed antenna, and it is established that satisfactory switching speed can be obtained using a simple low-cost driver circuit.

With the ever-increasing need for wireless communication and the emergence of many systems, it is important to design broadband antennas to cover a wide frequency range. The aim of this paper is to design a broadband patch antenna, employing the three techniques of slotting, adding directly coupled parasitic elements and fractal electromagnetic band gap (EBG) structures.The bandwidth is improved from 9.3 to 23.7%. A wideband ranging from 4.15 to 5.27 GHz is obtained. Also, a comparative analysis of embedding EBG structures at different heights is also done. The composite effect of integrating these techniques in the design provides a simple and efficient method for obtaining low-profile, broadband, and high-gain antenna. By the addition of parasitic elements the bandwidth was increased to 18%. Later on by embedding EBG structures the bandwidth was increased up to 23.7%. The design is suitable for a variety of wireless applications like WLAN and radar applications.

Electrodynamics models and radiophysical properties of carbon nanotube-dipoles (isolated on the substrate lattices), metallic optical antennas and optical antennas, formed from ZnO nanorods coated with metal films were developed and investigated. The models are based on numerically analytical solution of integrodifferential equations describing the diffraction of electromagnetic waves on impedance and dielectric bodies. The use of integral representations of the kernels of integrodifferential equations allowed us to overcome the difficulties of solution, associated with the singularity of kernels and to reduce the computation time by an order of magnitude.

Fourth generation mobiles require multi-standard operating handsets with small physical size as well as increasing demand for higher data rates. Compact multi-band printed inverted-F antennas (IFA) for available wireless communications are proposed in this paper. New design of printed IFA based on uniplanar compact electromagnetic band-gap (EBG) structure concept is proposed. A printed-IFA with L-load shaped over an artificial ground plane is designed as the main antenna to cover most wireless applications such as GSM, LTE, UMTS, Bluetooth, Wimax, and WLAN. The multi-band is created by means of an EBG structure that is used as a ground plane. Different shapes of uniplanar EBG such as ring, split ring resonator, and spiral rather than mushroom-like structure are investigated. The proposed antenna is built on the uniplanar EBG ground plane with size of 35 × 45 mm2, which is suitable for most of the mobile devices.