Thin films of polytetrafluoroethylene (PTFE) were
prepared by pulsed-laser deposition (PLD) from bulk PTFE targets using 157
nm F2-laser radiation. The films were analyzed by means of optical
polarization microscopy, stylus profilometry, XPS, XRD, FTIR spectroscopy,
and by capacitance measurements. The effect of substrate temperature,
Ts, on the morphology and crystallinity of the films was studied. Films
treated at sufficiently high Ts consist mainly of spherulite-like
crystallites. Films with a thickness of more than about 155 nm are
continuous, pinhole-free, well adherent to the substrate, and have a
composition which is similar to that of the target material. The minimum
film thicknesses and deposition rates are much lower than those achieved
with pressed PTFE powder targets using 248 nm KrF-laser ablation. This is
related to the different deposition mechanisms. Film formation based on
KrF-laser ablation of pressed powder targets is mainly related to the
condensation of large particulates transferred in a particle jet from the target
to the substrate. F2–laser ablation and film formation seems to be
based on the ablation and condensation of small fragments. Correspondingly, the
morphology, crystallinity, and the optical and dielectrical properties of
films significantly differ from each other.