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Detection and characterization of stacking faults by light beam induced current mapping and scanning infrared microscopy in silicon*

Published online by Cambridge University Press:  15 August 1998

C. Vève-Fossati  and
S. Martinuzzi
C. Vève-Fossati
Affiliation:
Laboratoire LP DSO, EA 2192, Faculté des sciences et techniques de Marseille-St. Jérôme, 13397 Marseille Cedex 20, France
S. Martinuzzi*
Affiliation:
Laboratoire LP DSO, EA 2192, Faculté des sciences et techniques de Marseille-St. Jérôme, 13397 Marseille Cedex 20, France
*
[email protected]
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Abstract

Non destructive techniques like scanning infrared microscopy and light beam induced current mapping are used to reveal the presence of stacking faults in heat treated Czochralski grown silicon wafers. In oxidized or contaminated samples, scanning infrared microscopy reveals that stacking faults grow around oxygen precipitates. This could be due to an aggregation of silicon self-interstitials emitted by the growing precipitates in the (111) plane. Light beam induced current maps show that the dislocations which surround the stacking faults are the main source of recombination centers, especially when they are decorated by a fast diffuser like copper.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 3 , Issue 2 , August 1998 , pp. 123 - 126
Copyright
© EDP Sciences, 1998

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Footnotes

*

This paper was presented at D.E.S.' 97 (Poitiers, France, September, 4 and 5, 1997).

References

* This paper was presented at D.E.S.' 97 (Poitiers, France, September, 4 and 5, 1997).