Epitaxial (100) and (111)-oriented Pb(Zr,Ti)O3-based thin films and heterostructures have been transferred intact from their sapphire and MgO growth substrates to silicon and polymer substrates utilizing a novel laser liftoff process. The heterostructures, while on their growth substrate, were bonded to the receptor substrates using one of several bonding methods, including van der Waals bonding to an elastomer receptor, and transient liquid-phase Pd-In bonding to Si. A single 38 ns pulse from a KrF excimer laser (<,= 248 nm) directed through the transparent growth substrate induced localized heating of the perovskite interfacial layer. At fluences corresponding to the onset of vaporization (>300 mJ/cm2), the sapphire or MgO substrate was detached. Because of the short pulse length and the low thermal conductivity of Pb-based perovskite phases, heating of the top surface of the heterostructure was minimal, thus permitting film transfer to thermally-sensitive receptor substrates. X-ray rocking curves revealed slight broadening of the principal PLZT diffraction peaks (∼10–20%), suggesting local relaxation of film stress.

Lowering the fabrication temperature for ferroelectric films is very important not only for silicon monolithic circuits but also for various substrates. Amorphous PbTiO3 thin films were prepared on glass substrates using ArF pulsed laser deposition (PLD). They were subsequently treated by a laser-induced phase transformation technique to achieve a perovskite structure. After irradiation by an ArF pulsed laser with an energy density 50mJ/cm2 in air, the films crystallized into the perovskite structure. It was possible to maintain the substrate at room temperature during the whole fabrication process. The structure, morphology and composition of the films were characterized by X-ray diffraction diffractometry (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX), respectively. The surface of film irradiated with a laser was often rather rough and peeled off everywhere. It was necessary to control the number of laser pulses to avoid damaging the films. The effects of chemical composition and fabrication temperature are also discussed.

Transmission electron microscopy is used to examine the structural characteristics of Pb0.9La0.1Zr0.2Ti0.8O3 (PLZT) films grown directly on single crystal LaAlO3 (LAO) substrates. In particular, the domain orientation and film epitaxial quality as a function of substrate deposition temperature are obtained in the range 500–650°C and compared to x-ray diffraction results. High-resolution cross sectional images and electron diffraction patterns confirm that domain orientation and overall epitaxial quality can be optimized with growth temperature. In addition, these results show a direct correlation with pyroelectric measurements obtained for capacitor structures incorporating La1−xSrxCoO3 (LSCO) top and bottom electrodes.