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Tem Investigation of Growth Temperature Dependence in Pulsed-Laser Ablated PLZT Films for Pyroelectric Applications

Published online by Cambridge University Press:  10 February 2011

R. N. Jacobs ,
R. P. Godfrey ,
W. L. Sarney ,
C. W. Tipton  and
L. Salamanca-Riba
R. N. Jacobs
Affiliation:
Department of Materials & Nuclear Engineering, University of Maryland-College Park, MD 20742
R. P. Godfrey
Affiliation:
Department of Materials & Nuclear Engineering, University of Maryland-College Park, MD 20742
W. L. Sarney
Affiliation:
Department of Materials & Nuclear Engineering, University of Maryland-College Park, MD 20742
C. W. Tipton
Affiliation:
U.S. Army Research Laboratory – Adelphi, MD 20783
L. Salamanca-Riba
Affiliation:
Department of Materials & Nuclear Engineering, University of Maryland-College Park, MD 20742
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Abstract

Transmission electron microscopy is used to examine the structural characteristics of Pb0.9La0.1Zr0.2Ti0.8O3 (PLZT) films grown directly on single crystal LaAlO3 (LAO) substrates. In particular, the domain orientation and film epitaxial quality as a function of substrate deposition temperature are obtained in the range 500–650°C and compared to x-ray diffraction results. High-resolution cross sectional images and electron diffraction patterns confirm that domain orientation and overall epitaxial quality can be optimized with growth temperature. In addition, these results show a direct correlation with pyroelectric measurements obtained for capacitor structures incorporating La1−xSrxCoO3 (LSCO) top and bottom electrodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 563
Copyright
Copyright © Materials Research Society 2000

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