We have studied the effect of Ta on the structure, magnetic properties and the ordering temperature of FePt(Ta) thin films. The samples are prepared by the dc and rf magnetron cosputtering method with 3 single element targets. After a deposition, the samples are annealed in a vacuum at various temperatures. The XRD patterns show strong (111) peaks at all annealing temperatures, but the change in the d-spacings reveals a disorder-order transformation. The more Ta is added to the FePt, the larger the coercivity becomes. The coercivity of the FePtTa40W film annealed at 700°C reaches about two times as large as the value of the pure FePt film. The delta m curves imply that Ta atoms diffuse into the grain boundary to reduce inter-granular exchange coupling, which leads the enhancement of coercivity

A Permalloy antidot array with square hole size 800?800 nm2 has been fabricated by the means of electron-beam lithography and lift-off techniques. An out-of-plane anisotropy was found in both the reference film of Permalloy and the antidot array with the thickness of 100 nm. Inhomogeneous current-density distribution and complex domain structures in the antidot nanostructure result in unique behavior of the magnetoresistance. Quantized standing spin-wave modes originating from the lateral confinement of the antidot nanostructure were clearly observed for the magnetic field applied normal to the array plane. Two uniform precession resonance modes occurred when the field deviated more than 30 degrees from the normal to the plane. These two resonances originate from different regions of the array having distinct dipolar field patterns with different orientation and magnitude of magnetostatic field. The easy axes of the anisotropy in these regions are in-plane and orthogonal to each other.

The ferromagnetic/nonmagnetic (FM/NM) interfacial effects on the spin accumulation in the free layer were studied in a pseudo-spin-valve structure (PSVs) consisting of two FM layers separated by a NM spacer layer. We developed a spin current model for the current-induced magnetic switching (CIMS) effect based on the spin diffusion equations and appropriate boundary conditions, and derived a new formula for the spin-dependent electrochemical potentials that are related to the spin-dependent density of states. The results indicate that the spin accumulation in the free layer mainly depends on the interfacial spin asymmetry coefficient Ξ?which originates from the spin-dependent interfacial conductance. In the parallel (anti-parallel) configuration of the magnetization direction for the free and fixed layer, the positive (negative) electron current (electrons from the free layer to the fixed layer and vice versa) drives the spin current polarization factor at the interface between the top electrode and the free layer to vary from Ξ? (-Ξ?) to 0, while at the interface between the free layer and the spacer layer the spin current polarization factor vary from Ξ? (0) to Ξ?/2, which means the total spin current polarization factor in the free layer varies from 0 (Ξ?) to Ξ?/2. These results show that the anti-parallel configuration has a less critical switching current than that of the parallel configuration. Thus, we can design PSVs with symmetrical critical current based on the model.