High resolution Schottky barrier detectors for alpha particles have been fabricated on 20 μm n-type 4H-SiC epitaxial layers. Schottky barrier contact structure was accomplished by deposition of 10 nm nickel on the Si face of the epilayers. The detectors were characterized for structural, electrical, and spectroscopic properties. Scanning electron microscopy and Nomarski optical microscopy revealed a micropipe density lower than 1 cm-2. The current-voltage (I-V) characteristics of the device exhibited very low leakage current of the order of 6.5 pA at an operating bias of 90 V. C-V measurements revealed a typical effective doping concentrations of 2.4 × 1014 cm-3 in these epilayers. The detectors were evaluated for alpha particles detection using a 241Am source. An energy resolution of ∼0.98% for 5.48 MeV alpha particles was observed. The separate contribution of charge carrier drift and diffusion to the total charge collection efficiency has been calculated in these detectors following a drift-diffusion model. Detailed electronic noise analysis in terms of equivalent noise charge (ENC) was carried out to study the effect of various noise components that contribute to the total electronic noise in the detection system. Effect of shaping time, presence of source and bias on the ENC has been studied in details.

The electronic properties of ThO2 single crystals were studied using x-ray photoemission spectroscopy (XPS). The XPS results show that the Th 4f core level is in an oxidation state that is consistent with that expected for Th in ThO2. The effective Debye temperature is estimated from the temperature dependent photoemission intensities of the Th 4f core level over the temperature range of 290 to 360 K. A Debye temperature of 468±32 K has been determined.

Results of investigation of X-ray sensors on the basis of GaAs compensated with chromium (HR GaAs) are presented in this work. HR GaAs material is shown to have the following physical parameters: the resistivity about 1GOhm*cm, the nonequilibrium charge carrier lifetime – hundreds of nanoseconds. Prototypes of microstrip and array HR GaAs sensors have been manufactured and tested. It is demonstrated that the sensors provide spatial resolution according to the pixel pitch and allow obtaining high quality X-ray images.

Silicon carbide has long been a promising material for semiconductor applications in high-temperature environments. Although silicon carbide radiation detectors were demonstrated more than a half century ago, the unavailability of high-quality materials and device manufacturing techniques hindered further development until about twenty years ago. In the late twentieth century, the development of advanced SiC crystal growth and epitaxial chemical vapor deposition methods spurred rapid development of silicon carbide charged particle, X-ray and neutron detectors. The history and status of silicon carbide radiation detectors as well as the influence of materials and device packaging limitations on future detector development will be discussed. Specific silicon carbide materials development needs will be identified.

In order to understand the fundamental charge transport in a-B4-5C:H/Si heterostructure devices, we have utilized x-ray photoelectron spectroscopy to determine the valence band offset at interfaces formed by Plasma Enhanced Chemical Vapor Deposition of a-B4-5C:H on (100) Si. For such interfaces, we observed relatively small valence band offset values of ± 0.25 eV.

Hydrothermal synthesis of ThO2, UxTh1-xO2, and UOx at temperatures between 670°C and 700°C has been demonstrated. Synthesis at these temperatures is 50-80°C below prior growth studies and represents a new lower bound of successful growth. ThO2 single crystals of dimensions 6.49mm x 4.89mm x 3.89 mm and weighing 0.633g have been synthesized at average growth rates near 0.125mm/week. Single crystal UxTh1-xO2 crystals with mole fractions up to x≈0.30 have also been grown. The largest alloyed crystal with mole fraction x≈0.23 has dimensions of 2.97mm x 3.23mm x ∼3mm and recorded average growth rates near 0.2mm/week. Four structures were solved from X-ray diffraction data and their crystallographic data reported here. Rocking curve analysis determined a dislocation density of 1.2×109 cm-2.

Much has been reported on the excellent performance of the Eu2+ activated SrI2-scintillator in spectroscopic applications, like the high light yield (97 660 ph/MeV) and good energy resolution (2.7% FWHM at 662 keV). The exploitation of these properties for other application fields is limited by the hygroscopic nature of the SrI2. Single crystal scintillating screens exhibit high spatial resolution, this combined with the high density, high effective atomic number, and the high light yield of the SrI2 could be used for high resolution X-ray imaging.

Some of the questions we tried to answer in this work are the following: owing to the excellent performance of the SrI2-scintillator in spectroscopic applications, how would it perform in X-ray imaging applications. X-ray images are described based on their (spatial) resolution and contrast, how would they look like when recorded using the SrI2-scintillator detector.

First a packaging technique was developed that protected the hygroscopic screens during the measurements. Our results show a high resolution of the images obtained with thin SrI2-scintillator screens both in 2D radiography and 3D tomography measurements. With these results, we think that the SrI2-scinitillator is not only a candidate for spectroscopic applications, but also for high resolution X-ray imaging purposes.

Cd0.9Zn0.1Te (CZT) single crystal has been grown using a tellurium solvent method. Two CZT crystals have been chosen from two different locations of the grown ingot. The two crystals were characterized using infrared transmission (IR) imaging and radiation detectors in planar geometry were fabricated on them. Current-voltage characteristics (I-V) revealed a resistivity of ∼8.6×1010 Ω−cm for detector A (6.9×6.9×4.8 mm3) and 6.7×1010 Ω−cm for detector B (11.5×11.7×2.6 mm3). IR imaging showed a lesser concentration of Te inclusions/precipitates in detector A. The transport properties viz., electron drift-mobility and electron mobility-lifetime product were measured using alpha spectroscopy in these detectors in a planar configuration. Detector A showed better charge transport properties compared to detector B. The superior transport properties of crystal A were reflected in the spectroscopic properties of the detectors. Gamma pulse height measurements using a 241Am isotope revealed an energy resolution of ∼5 % for detector A and ∼7 % for detector B. A digital spectrometer and a biparametric correction scheme was incorporated to recover the pulse height spectrum of high energy gamma rays (137Cs source) from the effect of poor hole movement.

Semiconductor materials have shown promise as ionizing radiation detection devices; however, to be used as a neutron detector, these materials require the addition of a nucleus with a large neutron absorption cross section (such as 10B or 6Li) to capture thermal neutrons and convert them into directly detectable particles. A semiconducting material that contains the neutron absorber within its regular stoichiometry has the potential to be more efficient than a layered or heterogeneous device at transferring the kinetic energy of the charged particle into the semiconducting material. One class of materials that has shown promise is Li-containing AIBIIIXVI2 compounds such as LiGaTe2, LiGaSe2, and LiInSe2. These materials have band gaps (2-3.5 eV) appropriate for room-temperature detection of thermal neutrons and would be the first detection material that is simultaneously, exquisitely sensitive to thermal neutrons; is insensitive to gammas; and acts as a direct conversion device. A vacuum distillation process provided high-purity lithium metal for AIBIIIXVI2 synthesis. Single crystals of sufficient bulk resistivity (grown for LiGaSe2 and LiInSe2LiInSe2) showed a distinct photo response as well as a clear response to alpha particles. Additional radiation measurements indicated that a 6 mm x 7 mm x 1.33 mm crystal of LiInSe2 detected gamma rays, and despite being composed of natural abundance lithium, responded to thermal neutrons as well.

In this work we investigate the radio-degradation of MEH-PPV polymer film as a tool for measuring high doses of gamma radiation. In order to produce film samples with thickness in the micron range, we have mixed the photoluminescent poly(2-methoxy-5(2'-ethylhexyloxy)-p-phenylenevinylene) copolymer (MEH-PPV) with a biodegradable poly(butylene adipate-co-terephthalate) copolymers (PBAT). The system was irradiated with a Co-60 source with doses ranging from 1 to 1,000 kGy. Ultraviolet-visible (UV-Vis) and photoluminescence (PL) spectroscopy have been used to investigate the radiation induced changes in the absorption and photon-emission spectra of the irradiated samples. Results indicate that the PL emission intensity varies exponentially with the applied gamma radiation dose for doses ranging from 30 to 500 kGy. The unambiguous relationship between PL & Dose together with the good flexibility of the copolymer films indicate that MEH-PPV/PBAT blends have great potential for applications in high gamma dose dosimetry.

Research for a reliable solid-form semiconductor neutron detector continues because such a device would have greater efficiency, in a compact form, than present day gas-filled 3He and 10BF3 detectors. The 6Li(n,t)4He reaction yields a total Q value of 4.78 MeV, larger than 10B, and easily identified above background radiations. Hence, devices composed of either natural Li (nominally 7.5% 6Li) or enriched 6Li (usually 95% 6Li) may provide a semiconductor material for compact high efficiency neutron detectors. A sub-branch of the III-V semiconductors, the filled tetrahedral compounds, AIBIICV, known as Nowotny-Juza compounds, are known for their desirable cubic crystal structure, and were originally studied for photonic applications. Equimolar portions of Li, Zn, and P or As were sealed under vacuum (10-6 Torr) in quartz ampoules with a graphite lining, loaded into a compounding furnace, and heated to 560 °C to form the ternary compound, LiZnP or LiZnAs, and further annealed to promote crystallization. The chemical composition of the synthesized starting material was confirmed at Galbraith Laboratories, Inc. by Inductively Coupled Plasma Atomic Emission Spectroscopy (ICP-AES), which showed the compounds were reacted in equal ratios, 1-1-1, to form ternary compounds. Bulk single crystal samples were grown by a high temperature technique described elsewhere. Samples were cut, polished, and prepared for electrical characterization by depositing a Ti/Au contact onto one side of the one of the samples and using silver epoxy to form the other contact. Current-voltage curves were collected for a sample with silver epoxy for both anode and cathode contact, and for a sample with a Ti-Au anode contact and silver epoxy cathode contact. A much higher resistivity was calculated, 6.6 x 1010 Ω·cm, for the sample with a Ti-Au contact compared the high conductivity seen with the sample using silver epoxy contacts.