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Valence Band Offset at Amorphous Boron Carbide / Silicon Interfaces
Published online by Cambridge University Press: 23 September 2013
Abstract
In order to understand the fundamental charge transport in a-B4-5C:H/Si heterostructure devices, we have utilized x-ray photoelectron spectroscopy to determine the valence band offset at interfaces formed by Plasma Enhanced Chemical Vapor Deposition of a-B4-5C:H on (100) Si. For such interfaces, we observed relatively small valence band offset values of ± 0.25 eV.
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- MRS Online Proceedings Library (OPL) , Volume 1576: Symposium WW – Nuclear Radiation Detection Materials , 2013 , mrss13-1576-ww04-08
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- Copyright © Materials Research Society 2013