The effect of rapid thermal annealing on the crystallization of arsenic and boron implanted amorphous silicon films is studied. Amorphous Si films of 4000 Å were deposited using LPCVD and implanted with arsenic or boron to doses of 5 × 1013, 5 × 1014, and 5 × 1015 cm−2. These films were then annealed using an Eaton Nova-400 RTA system (with temperature ranging from 900 to 1200 °C and dwell time ranging from 1 to 30 sec). The annealed films were studied using transmission electron microscopy, Hall effect measurement and temperature coefficient of resistance measurement. The optimal annealing conditions for the films were found.

The Fe depth distribution has been measured in semi-insulating (SI) InP implanted with Si as a function of implant temperature and post-implant annealing technique (either furnace annealing or rapid thermal annealing). Depth profiles obtained by secondary ion mass spectrometry and Rutherford backscattering measurements of the damage demonstrate that Fe redistributes into regions of residual damage during thermal processing. These results are interpreted in terms of implantation-related damage effects and the stoichiometry imbalance induced by the Si implantation.

The formation of shallow (0.05–0.2 μm) p+ layers in GaAs by pulse diffusion of Zn from a doped oxide source, thermal diffusion of Cd by vapor transport, or by low energy implantation of Cd, Mg, Be, Zn or Hg ions was investigated by electrochemical capacitance-voltage profiling, Secondary Ion Mass Spectrometry, Rutherford backscattering and Hall measurements. Hole densities in excess of 1019 cm−3 are obtainable by either Zn diffusion or acceptor implantation, though the high temperature cycle must be kept to ≤3 sec at (≤1000°C to prevent excessive redistribution of the acceptor dopants. Pulse diffusion at temperature °C leads to shallow regions with atomic concentrations above 1019 cm−3, but electrically active concentrations orders of magnitude less. These results are explained in terms of the unavailability of a sufficient density of vacancies at low temperatures.