MRS Online Proceedings Library (OPL)

Other actions

Published on behalf of Materials Research Society

Journal Home

Only show content I have access to (0)

Over 3 years (61)

View selected items
Save to my bookmarks
Export citations
Download PDF (zip)
Save to Kindle
Save to Dropbox
Save to Google Drive
Save content to
To save this undefined to your undefined account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your undefined account. Find out more about saving content to .

To save this article to your Kindle, first ensure [email protected] is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Please be advised that item(s) you selected are not available.
You are about to save
MRS Online Proceedings Library (OPL)
ISSN:

EISSN: 1946-4274

URL: /core/journals/mrs-online-proceedings-library-archive
Your Kindle email address

Please provide your Kindle email.

@free.kindle.com @kindle.com (service fees apply)

By using this service, you agree that you will only keep content for personal use, and will not openly distribute them via Dropbox, Google Drive or other file sharing services

< Back to all volumes

Symposium B – Defects in Semiconductors II

S. Mahajan, J.W. Corbett

Volume 14 - 1982

Contents

Page 4 of 4

First
« Prev
1
2
3
4
Next »
Last

Research Article

Quenched-in Defects in CW Laser Irradiated Virgin Silicon.
A. Chantre, M. Kechouane, D. Bois
Published online by Cambridge University Press:

15 February 2011, 547
- Article
- - Get access
    
    Check if you have access via personal or institutional login
    
    Log in Register
- Export citation
Quenched-in defects in cw laser irradiated silicon have been identified using deep level transient spectroscopy. Four among the five dominant defect states arise from transition metal impurities (iron, chromium) present in precipitates in the as-grown material and dispersed into the crystal upon heat treatment. Native defects are involved in the form of phosphorous-vacancy complexes, which account for the remaining level.

Page 4 of 4

First
« Prev
1
2
3
4
Next »
Last

MRS Online Proceedings Library (OPL)

Refine listing

Actions for selected content:

Symposium B – Defects in Semiconductors II

Research Article

Quenched-in Defects in CW Laser Irradiated Virgin Silicon.

MRS Online Proceedings Library (OPL)

Refine listing

Actions for selected content:

Save Search

Symposium B – Defects in Semiconductors II

Research Article

Quenched-in Defects in CW Laser Irradiated Virgin Silicon.