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Quenched-in Defects in CW Laser Irradiated Virgin Silicon.

Published online by Cambridge University Press:  15 February 2011

A. Chantre ,
M. Kechouane  and
D. Bois
A. Chantre
Affiliation:
Cnet/Cns - BP, 42 – 38240 Meylan - France
M. Kechouane
Affiliation:
Cnet/Cns - BP, 42 – 38240 Meylan - France
D. Bois
Affiliation:
Cnet/Cns - BP, 42 – 38240 Meylan - France
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Abstract

Quenched-in defects in cw laser irradiated silicon have been identified using deep level transient spectroscopy. Four among the five dominant defect states arise from transition metal impurities (iron, chromium) present in precipitates in the as-grown material and dispersed into the crystal upon heat treatment. Native defects are involved in the form of phosphorous-vacancy complexes, which account for the remaining level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 547
Copyright
Copyright © Materials Research Society 1982

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References

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