In developing photovoltaic (PV) systems with reliable lifetime performances, it is critical to have quantitative knowledge of not just initial properties and performances, but also their performance over the warrantied 25 year lifetime. In 2010, the Science for Energy Technology Workshop, convened by U.S Department of Energy (DOE) Basic Energy Science, prioritized photovoltaic module lifetime and degradation science (L&DS), which serve as the basis for quantitative and mechanistic understanding of lifetime performance. In order to better understand degradation rates and mechanisms of PV systems in the real-world environment, the SDLE SunFarm at Case Western Reserve University has been created, which is a highly instrumented outdoor test facility with 148 PV modules and > 8000 samples on sun for weathering and degradation studies of materials components and systems designed for long-lived energy systems. I-V and power performance of 10 multi-crystalline silicon PV modules from different manufacturers, using baseline and continuous power monitoring and comprehensive weather and solar resource monitoring, to enable time series analysis for insights into performance characteristics and initial degradation.

Five modules from each manufacturer were exposed using mirror augmentation in typical (Cleveland, OH) climatic conditions. The mirror augmentation used geometric concentration factors of 1X, 1.5X and 1.9X of the nominal 1 sun. The effect of mirror augmentation on the modules' performance is reported. A Daystar multi-tracer was used to measure I-V curves of individual modules every 15 minutes while power output under maximum power point tracking was monitored continuously. Monitoring environmental factors (wind speed, wind direction, rainfall, and humidity), solar resource, and module temperatures allow for determination of the effects of these conditions on module power production. Power data was corrected to standard test condition (STC) according to climatic and solar irradiance. Changes in fill factor, short circuit current, open circuit voltage and maximum power are reported for each module. With time series analysis, a better understanding of the module's performance over time and under environmental conditions can be developed.

A high temperature ceramic selective emitter for thermophotovoltaic (TPV) electric generators is described with a spectral match to GaSb IR cells. While solar cells generate electricity quietly and are lightweight, traditional solar cells are used with sunlight and only generate electricity during the day. Workers at JX Crystals invented the GaSb IR cell as a booster cell to demonstrate a solar cell conversion efficiency of 35%. JX Crystals now makes these IR cells. In TPV, these cells can potentially be used with flame heated ceramic emitters to generate electricity quietly day and night. One of the most important requirements for TPV is a good spectral match between the ceramic IR emitted and the IR PV cells. The first problem is to find, demonstrate, and integrate a doped ceramic IR emitter with a spectral match to these GaSb cells. Recently, nickel oxide and cobalt oxide doped MgO-based ceramics have been shown experimentally and theoretically to have spectral selectivity but no attempts have been made to integrate these ceramic IR emitters into a fully operational TPV generator. Herein, we review the history of TPV and note that a key to future progress will be the integration of an appropriate ceramic emitter with cells and a burner to demonstrate an operational TPV generator. Integrating TPV into a residential boiler is discussed as a potential future large volume commercial market.

Oblique-angle deposition is used to fabricate indium tin oxide (ITO) optical coatings with a porous, columnar nanostructure. Nanostructured ITO layers with a reduced refractive index are then incorporated into antireflection coating (ARC) structures with a step-graded refractive index design, enabling increased transmittance into an underlying semiconductor over a wide range of wavelengths of interest for photovoltaic applications. Low-refractive index nanostructured ITO coatings can also be combined with metal films to form an omnidirectional reflector (ODR) structure capable of achieving high internal reflectivity over a broad spectrum of wavelengths and a wide range of angles. Such conductive high-performance ODR structures on the back surface of a thin-film solar cell can potentially increase both the current and voltage output by scattering unabsorbed and emitted photons back into the active region of the device.

A system combining photovoltaic (PV) and solar thermal approaches is designed to convert solar energy to electricity with high efficiency across the full solar spectrum. Concentrated solar spectrum is split into two parts: PV and thermal. The PV part of the spectrum is further split into several subbands directed to bandgap appropriate solar cells on an inexpensive Si substrate. Epitaxial Ge on Si is used as a virtual substrate for III-V semiconductor growth. At long and very short wavelengths where PV efficiency is low, solar radiation is directed to a high temperature thermal storage tank for electricity generation using heat engines. The potential of using PV waste heat due to thermalization of high energy photoelectrons for electricity generation is also investigated. Detailed optical and thermal analysis show that with optimized design and neglecting optical component loss, system power conversion efficiency can reach 56%, including more than 16% absolute contribution from thermal storage.

As incentive programs for solar energy are gradually being phased out around the world, solar must quickly become a viable and competitive option to the mainstream, fossil-based power generation technologies. As such, it must begin to assume more of the characteristics of the traditional technologies in order to be compatible with utility generation business models. With this goal in mind, Solergy has realized a series of innovations that include optics, concentrator module design, and tracking to create a high performing, long-lasting High Concentration Photovoltaic (HCPV) system. Because it is upgradeable, Solergy is the only HCPV system that can actually increase its power output over its lifetime and then subsequently extend its life out to 40 years. This talk will discuss the types of technological advances required to achieve this and share results from the lab and the field. In particular, the talk will cover the world’s only all-glass concentrating lens, high performance tracking, and the unique upgrade mechanism.

Investigation of optical absorption in ∼25μm thick, monocrystalline silicon (Si) substrates obtained from a novel exfoliation technique is done by fabricating solar cells with single heterojunction architecture (without using intrinsic amorphous silicon layer) with diffused back junction and local back contact. The ease of process flow and the rugged and flexible nature of the substrates due to thick metal backing enables use of various light-trapping and optical absorption enhancement schemes traditionally practiced in the industry for thicker (>120μm) substrates. Optical measurement of solar cells using antireflective coating, texturing on both surfaces, and back surface dielectric/metal stack as mirror to reflect the long wavelength light from the back surface show a very low front surface reflectance of 4.6% in the broadband spectrum (300nm-1200nm). The illuminated current voltage (IV) and external quantum efficiency (EQE) measurement of such solar cell shows a high integrated current density of 34.4mA/cm2, which implies significant internal photon reflection. Our best cell with intrinsic amorphous silicon (i-a-Si) layer with only rear surface textured shows an efficiency of 14.9%. EQE data shows improved blue response and current density due to better front surface passivation. Simulations suggest that with optimized light trapping and surface passivation, such thin c-Si cells can reach efficiencies >20%.

Rigorous finite element optical simulations have been used to examine the absorption of light in various crystalline silicon based, nanostructured solar cell architectures. The compared structures can all be produced on glass substrates using a periodically structured dielectric coating and a combination of electron-beam evaporation of silicon and subsequent solid phase crystallization. A required post-treatment by selective etching of non-compact silicon regions results in an absorber material loss. We show that by adequately tailoring the optical design around the processed silicon layer, the absorptance loss due to material removal can be completely overcome. The resulting silicon structure, which is an array of holes with non-vertical sidewalls, shows promising light path enhancement and features an even higher absorptance than the initial nanodome structure of the unetched absorber.

Solar spectral splitting technologies have been investigated over the years as alternatives to improve the efficiencies obtained from photovoltaic devices by splitting the incident solar light into its respective wavelengths, and aligning a series of photovoltaic cells arranged next to each other as opposed to being physically stacked on top of each other as is the case with multijunction cells. Limitations previously posed by multijunction cells like current matching and lattice matching are circumvented through this approach, allowing for a broader and potentially cheaper pool of candidate cells to be used for energy conversion. In this study, we design and gauge the performance of a single optical element capable of splitting the light and concentrating it simultaneously unto a bed of photovoltaics, each illuminated by the part of the spectrum that corresponds best to its relevant properties such as the bandgap and the external quantum efficiency. The prismatic structure constituting the device relies on the device’s transmission in the visible region and its dispersion. Presented in this study is the mathematical framework used in designing the structure for a specific merit function; in particular, the study focuses on minimizing optical losses at the interfaces of the structure with the ambient air. Variables like the index of refraction of the material used, the angle of incidence on the surface, the exit angle of the light out of the structure factor into the optical center’s design. Compared to alternative splitting technologies like dichroic mirrors, the model splits the incident polychromatic light into a continuous band of wavelengths as opposed to discrete wavelengths that can be adapted on to different sets of single junction cells. The device is an improvement to our published 1-axis linear concentrator reported earlier in the year for its point-focus output yielding in even higher concentration and potentially lowers costs.

The goal of this work is to increase the efficiency of conventional solar cells by incorporating quantum dot (QD) nanoparticles in the absorption mechanism. The strategy is to have the QDs absorb UV and fluoresce photons in the visible region that are more readily absorbed by the cells. The outcome is that the cells have more visible photons to absorb and have increased power output. The QDs, having a CdSe core and a ZnS shell, were applied to the solar cells as follows: (1) The QDs were first synthesized in a solution. (2) They were then removed from the solution and dried. (3) The dried QDs are then deposited into polydimethylsiloxane (PDMS) and the PDMS/QD composite is allowed to cure. (4) The cured sample is applied to a silicon solar panel. The panel with the PDMS/QD application outputs 2.5% more power than the one without, under identical AM1.5 illumination using QDs that fluoresce in the orange region. This work demonstrates the feasibility of incorporating QDs to increase the efficiency of conventional solar cells. Because the cells absorb better in the red region, future effort will be to use QDs that fluoresce in that region to further boost cell output.

In this work, we re-evaluate the temperature coefficient in multi-junction solar cells by including the effects of radiative coupling (i.e. re-absorption of emitted photons within the cell) and eliminating radiative losses towards the substrate (i.e. use of a back mirror). The model developed is for two-junction devices, and it takes into account: the number of terminals, the energy bandgaps of the sub-cells, the light concentration, and whether a back mirror is used or not. The temperature coefficients obtained are compared with the case where no luminescent effects are considered. The results show that, in two-terminal and four-terminal devices, the sensitivity to temperature is almost the same whether luminescent effects are taken into account or not. However, these effects are most significant in three-terminal devices. In four-terminal devices, the results show that these effects depend to a large extent on the materials used, the design of the system, i.e. on the effectiveness of radiative exchange between the cells involved.

In this study we analyze the electrical behavior of a junction formed by an ultraheavily Ti implanted Si layer processed by a Pulsed Laser Melting (PLM) and the non implanted Si substrate. This electrical behavior exhibits an electrical decoupling effect in this bilayer that we have associated to an Intermediate Band (IB) formation in the Ti supersaturated Si layer. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurements show a Ti depth profile with concentrations well above the theoretical limit required to the IB formation. Sheet resistance and Hall mobility measurements in the van der Pauw configuration of these bilayers exhibit a clear dependence with the different measurement currents introduced (1µA-1mA). We find that the electrical transport properties measured present an electrical decoupling effect in the bilayer as function of the temperature. The dependence of this effect with the injected current could be explained in terms of an additional current flow in the junction from the substrate to the IB layer and in terms of the voltage dependence in the junction with the measurement current.

In this paper, a quantum-kinetic equivalent of Shockley-Read-Hall recombination is derived within the non-equilibrium Green's function formalism for a photovoltaic system with selectively contacted extended-state absorbers and a localized deep defect state in the energy gap. The novel approach is tested on a homogeneous bulk absorber and then applied to a thin film photo-diode with large built-in field in the defect-rich absorber region. While the quantum-kinetic treatment reproduces the semi-classical characteristics for a bulk absorber in quasi-equilibrium conditions, for which the latter picture is valid, it reveals in the thin film case non-classical characteristics of recombination enhanced by tunneling into field-induced sub-gap states.

A new type of counter-electrode based on platinum (Pt) nanoclusters has been introduced for semi-transparent dye-sensitized solar cells (DSSCs). This electrode is fabricated using a drop coating method where Pt nanoparticles dispersed in an acetone solvent are applied on a heated indium tin oxide (ITO) coated glass substrate. Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) images suggest that the Pt nanoparticles form a nanoporous structure with a large surface area while the distribution of Pt appears to be uniform on the surface of the ITO layer. UV/visible/near infrared transmittance spectroscopy showed that the Pt/ITO/glass electrode is highly transparent with a maximum transparency of 80% at 550 nm.

Over the past few years, ion implanters specifically developed for the high throughput required by the silicon photovoltaic industry, have become commercially available. Recent research and development has focused on the formation of doped surface regions, particularly the formation of selective emitters. In this study we explore two effects of ion implantation into a thermal silicon dioxide passivating/antireflection dielectric. We show evidence that the electronic and optical performance of the layer can be improved via the incorporation of charges created within the dielectric film and the creation of a graded refractive index, minimizing the surface recombination and reflection losses respectively.

We developed a multilayer hybrid structure by imbedding ZnO nanorod arrays in TiO2 network for each layer, for the pourese of taking ZnO nanorods as the highway of electron transport. ZnO nanorods can be prepared by hydrothermal process, which is simple, low cost and easy control. The ZnO nanorod arrays were grown by reported hydrothermal method, then TiO2 network was constructed by spin-coating titanium precursor sol on ZnO nanorod arrays and calcining. The electrochemical impedance spectrum measurements were taken to study the electrical properties of this kind of hybrids, and the results indicated that the effective electron lifetime reaches a magnitude of microsecond which is similar to the pure ZnO nanorod arrays. It reveals to us that ZnO nanorods may dominate the electrical properties of this nano-hybrid structure.

Silicon nanoparticles (Si NPs) were synthesized by plasma enhanced chemical vapor deposition (PECVD) using silane as a silicon source. Allylamine was used as passivation ligands to form water-soluble Si NPs. Finally, aqueous asymmetric flow field-flow fractionation was used to successfully separate the polydisperse Si NPs into monodisperse Si NP fractions.

With the application of near-infrared radiation (NIR), TiO2 films for dye-sensitized solar cells (DSCs) on metallic substrates can be sintered in just 12.5 s. The photovoltaic performance of devices made with NIR sintered films match those devices made with conventionally sintered films prepared by heating for 1800 s. Here we characterise the electron transport, electron lifetime and phase-morphological properties of ultrafast NIR sintered films, using impedance spectroscopy, transient photovoltage decay and x-ray diffraction measurements. An important factor in NIR processing of TiO2 films is the peak metal temperature (PMT) and we show that during the 12.5 second heat treatment that a PMT of around 635 °C gives near identical electron transport, electron lifetime and morphological properties, as well comparable photovoltaic performance to a conventionally sintered (500 °C, 30 mins) film. What is perhaps most interesting is that the rapid heating of the TiO2 (to temperatures of up to 785°C) does not lead to a large scale rutile phase transition. As such photovoltaic performance of resultant DSC devices is maintained even though the TiO2 has been at temperatures which traditionally would have reduced cell photocurrents via anatase-to-rutile phase transition.

Indium Tin Oxide (ITO) has been widely used as a Transparent Conductive Oxide (TCO) layer in the photovoltaic solar technology because of its excellent electrical and optical properties. However, ITO is brittle, and its conductivity decreases significantly as the ITO films are exposed to stretching or bending strains especially in flexible/foldable solar cell applications. The cracks in ITO appear at very low strains which might cause failure in the conductive layer because of the combination of a very thin film of brittle ceramic material applied to a polymer substrate. Poly (3, 4-ethylenedioxythiophene), abbreviated PEDOT, is of increasing interest as a competitive candidate to ITO. PEDOT has found its way in many applications such as transparent electrode materials and transparent conductive layers in photovoltaic solar cells. In this work, the mechanical behavior of PEDOT was studied under high cycle bending fatigue in which the effects of bending diameter and bending frequency were considered and compared to ITO. High magnification optical images were used to study cracking in the PEDOT as well as the ITO layers. In flexible solar cells, the web will be exposed to folding/bending many times during manufacturing and installation. Therefore, the thin film substrate structure will be exposed to cyclic loading cyclic tensile and compressive strains. Therefore, this work was designed to mechanically fatigue the structure and study its behavior. It was found that bending diameters as well as material (PEDOT or ITO) have a great influence on the electrical conductivity of the thin films.

The effect on film quality of the dielectric constant εb of the bath solution used for electrophoretic deposition of CdSe quantum dots (QDs) was investigated. Various combinations of solvents yielding different εb were tested, with the best films produced by a bath consisting of hexanes and acetone. Two different types of film were observed, depending on the volume fraction of acetone in the bath: thin, but strongly adhered films for εb < 12 and thick but loose films for εb > 12. This behavior is explained in terms of the rate at which QDs arrive at the surface of the electrode, which depends on the electrophoretic mobility of the QDs and therefore also the dielectric constant of the bath.

In the present study, we have studied photoelectrochemical properties of poly(3-octathiophene) (P3OT), blending with multi-wall carbon nanotubes (MWCNTs). P3OT blended with MWCNTs was characterized using Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM), Raman spectroscope, and Cyclic Voltammetry (CV) techniques, respectively. The photoelectrochemical current of the MWCNs-P3OT based cell under illumination was investigated by applying a voltage. The blend consisting of 10% MWCNTs in P3OT gave the promising photocurrent in 0.2 M tetra-butyl-ammonium-tetrafluoroborate (TBATFB), electrolyte. Experimental results indicate that photocurrent obtained from MWCNT-P3OT was three times higher than simple P3OT-based conducting polymer. The electrochemical responses of MWCNT-P3OT films in different electrolytes such as 0.2M TBATFB, 0.2 M LiClO4, 1 M H2SO4 and 0.2 M LiBF6 were investigated for comparative photocurrent properties of the photoelectrochemical cell.