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Study of the electrical behavior in Intermediate Band-Si junctions

Published online by Cambridge University Press:  27 February 2013

D. Pastor ,
J. Olea ,
A. del Prado ,
E. García-Hemme ,
R. García-Hernansanz ,
L. González-Pariente ,
I. Mártil  and
G. González-Díaz
D. Pastor*
Affiliation:
Dpto. Física Aplicada III (Electricidad y Electrónica), Facultad de Ciencias Físicas,Universidad Complutense de Madrid, Spain Instituto de Energía Solar, Escuela Técnica Superior de Ingenieros de Telecomunicación, Universidad Politécnica de Madrid, Spain CEI Campus Moncloa, UCM-UPM, Madrid, Spain
J. Olea
Affiliation:
Instituto de Energía Solar, Escuela Técnica Superior de Ingenieros de Telecomunicación, Universidad Politécnica de Madrid, Spain CEI Campus Moncloa, UCM-UPM, Madrid, Spain
A. del Prado
Affiliation:
Dpto. Física Aplicada III (Electricidad y Electrónica), Facultad de Ciencias Físicas,Universidad Complutense de Madrid, Spain CEI Campus Moncloa, UCM-UPM, Madrid, Spain
E. García-Hemme
Affiliation:
Dpto. Física Aplicada III (Electricidad y Electrónica), Facultad de Ciencias Físicas,Universidad Complutense de Madrid, Spain CEI Campus Moncloa, UCM-UPM, Madrid, Spain
R. García-Hernansanz
Affiliation:
Dpto. Física Aplicada III (Electricidad y Electrónica), Facultad de Ciencias Físicas,Universidad Complutense de Madrid, Spain CEI Campus Moncloa, UCM-UPM, Madrid, Spain
L. González-Pariente
Affiliation:
Dpto. Física Aplicada III (Electricidad y Electrónica), Facultad de Ciencias Físicas,Universidad Complutense de Madrid, Spain
I. Mártil
Affiliation:
Dpto. Física Aplicada III (Electricidad y Electrónica), Facultad de Ciencias Físicas,Universidad Complutense de Madrid, Spain CEI Campus Moncloa, UCM-UPM, Madrid, Spain
G. González-Díaz
Affiliation:
Dpto. Física Aplicada III (Electricidad y Electrónica), Facultad de Ciencias Físicas,Universidad Complutense de Madrid, Spain CEI Campus Moncloa, UCM-UPM, Madrid, Spain
*
*Electronic mail: [email protected]
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Abstract

In this study we analyze the electrical behavior of a junction formed by an ultraheavily Ti implanted Si layer processed by a Pulsed Laser Melting (PLM) and the non implanted Si substrate. This electrical behavior exhibits an electrical decoupling effect in this bilayer that we have associated to an Intermediate Band (IB) formation in the Ti supersaturated Si layer. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurements show a Ti depth profile with concentrations well above the theoretical limit required to the IB formation. Sheet resistance and Hall mobility measurements in the van der Pauw configuration of these bilayers exhibit a clear dependence with the different measurement currents introduced (1µA-1mA). We find that the electrical transport properties measured present an electrical decoupling effect in the bilayer as function of the temperature. The dependence of this effect with the injected current could be explained in terms of an additional current flow in the junction from the substrate to the IB layer and in terms of the voltage dependence in the junction with the measurement current.

Keywords

electrical propertieslaser annealingion-implantation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1493: Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids , 2013 , pp. 85 - 90
Copyright
Copyright © Materials Research Society 2013 

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References

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