In this work, we demonstrate a size-controlled synthesis of CuNi octahedral nanocrystals (NCs) using a hot colloidal solution approach. Two different sizes of CuNi nano-octahedra are chosen and investigated. It is determined that the reagent concentration remarkably plays a key role in the formation of the size-defined CuNi octahedral NCs. In terms of the reduction of 4-nitrophenol (4-NP), it uncovers that the obtained CuNi octahedral NCs (in both sizes) exhibit higher catalytic activity than those of CuNi spherical NCs reported previously. It further indicates that the catalytic performance is strongly size-dependent due to their devise specific surface areas of the exposed crystallographic planes.

Compared with traditional stainless steels, high nitrogen stainless steels (HNSS), have been widely used due to their high strength, toughness along with excellent corrosion resistance and low cost, formed by partial replacement of Ni (austenite-forming element) by N. The evolution of the microstructure of a Cr19Mn19Mo2N0.7 stainless steel is investigated after solution treatment at 1010, 1060, 1200 or 1250°C for 30min. A complex multilayer structure has been found under a negative pressure vacuum. A white ferritic layer at the surface is formed, and a subsurface layer with full austenitic structure and a bulk microstructure comprising of austenite and ferrite are detected. With increasing solution temperature, the surface layer thickness increases. The formation of the multilayer structure is attributed to an outward diffusion, a diffusive retardation and an abnormal accumulation of nitrogen during solution treatment.

We studied the microstructure of Al0.28Ga0.72As0.972Sb0.028 metamaterials containing a developed array of AsSb nanoinclusions. The AlGaAsSb films were grown by low-temperature molecular-beam epitaxy followed by high-temperature annealing at 750°C. The process resulted in an array of self-organized AsSb nanonclusions with an average diameter of 15 nm. The volume filling factor was about 0.003. Using transmission electron microscopy and x-ray diffraction we showed that the nanoinclusions have A7-type rhombohedral atomic structure with the following orientation in the matrix (0003)p || {111}m and [-2110]p || 〈220〉m, where p and m indices indicate the AsSb precipitate and AlGaAsSb matrix, correspondingly. The nanoinclusions appeared to be strongly enriched by antimony (more than 90 atomic %), whereas the Sb content in the AlGaAsSb matrix was 2.8 atomic %. The strong enrichment of the inclusion with Sb resulted from the local thermodynamic equilibrium between the solid AlGaAsSb matrix and AsSb inclusions which became liquid at a formation temperature of 750°C.

This work reports by the first time a method to control the geometry of Ga2O3 films nanocrystallites at 350 °C. The formation of controlled shaped nano-crystallites of γ-Ga2O3 from amorphous Ga2O3 films grown by RF-Sputtering at room temperature driven by nano-layers of group IB metals (Cu, Ag or Au) is studied. The reported results can be explained by the role of subsurface metal nano-layers and the non-equilibrium nature of the sputtering processes. To study the effects on the surface structure and their optical properties arrays of amorphous-Ga2O3/IB-metal/amorphous-Ga2O3 were annealed in dry N2 atmosphere at 350 °C by 50, 100 and 150 min. The experimental results can be explained by the evolution of the amorphous character of the films amorphous films towards the nanocrystalline γ-Ga2O3 phase driven by the metal nano-layer seed nature. As the annealing time was increased the transition from amorphous-Ga2O3 to the nanocrystalline γ-Ga2O3 phase was detected by X-ray diffraction analysis. The transition to the nanocrystalline γ-Ga2O3 is demonstrated by the formation of octahedral, triangle and ball shape nanocrystallites with sizes of ∼5 to 50 nm according to FE-SEM analysis. The influence of the metal nano-layer is clearly seen by the shift of the plasmon frequency resonance produced by the Ga2O3/IB-metal/Ga2O3 arrays in the region from 400 to 600 nm caused by the modification of the interface Ga2O3/IB-metal produced by the applied annealing stages.

Pure metallic nanofoams in the form of interconnected networks have shown strong potentials over the past few years in areas such as catalysts, batteries and plasmonics. However, they are often fragile and difficult to integrate in engineering applications. In order to better understand their deformation mechanisms, a multiscale approach is required to simulate the mechanical behavior of the nanofoams, although these materials will operate at the macroscale, they will still be maintaining an atomistic ordering. Hence, in this work we combine molecular dynamics (MD) and finite element analysis (FEA) to study the mechanical behavior of copper (Cu) nanofoams. Molecular dynamics simulations were performed to study the yield surface of a representative cell structure. The nanofoam structure has been generated by spinodal decomposition of binary alloy using an atomistic approach. Then, the information obtained from the molecular dynamics simulations in the form of yield function is transferred to the finite element model to study the macroscopic behavior of the Cu nanofoams. The simulated mechanical behavior of Cu nanofoams is in good agreement of the real experiment results.

In situ, real-time monitoring of a dehydration of poly(vinyl alcohol) (PVA) film is researched. The technique based on the incorporation plasmonic nanocages (NCs) between the two identical layers of PVA, (PVA)/NCs/(PVA) film, and its sensitivity to the variation of the refractive index of the surrounding PVA film via desorption water. The dehydration time increases from 180 (s) to 1800 (s) as the content of the PVA in the films increases twice, from (PVA)/NCs/(PVA) to (PVA)2/NCs/(PVA)2. Such effect could be explained by different rate of the molecules desorption from the PVA based films. Specifically, the dehydration rate is of 0.22 (vol% per s) and 0.026 (vol% per s) for (PVA)/NCs/(PVA) and (PVA)2/NCs/(PVA)2 films, respectively. The dehydration rate constant reduces from -50×10-4 (s-1) to -4.3 ×10-4 (s-1) as the content of PVA increases from (PVA)/NCs/(PVA) to (PVA)2/NCs/(PVA)2 films, respectively.

Metallic Copper nanoparticles (Cu NPs) were obtained via sputtering of Cu target onto liquid polymer, i.e., poly(ethylene glycol), PEG, under vacuum condition. The Cu NPs growth significantly right after the sputtering deposition from 3.1 nm to 4.1 nm in 4 hours as monitored by TEM. There was negligible growth of NPs for longer time and completely PEG acts as the coating material of Cu NPs so no agglomeration was observed for 1 week. The challenge of characterization of Cu NPs was also discussed.

In order to understand the impact of nano-crystallites on current transport mechanisms in screen-printed c-Si solar cells with lowly-doped emitter, Te-glass based Ag pastes with different transition temperatures (Tg) were used. The Te-glass with lower Tg showed lower Rc than the one with higher Tg due to the formation of nano-crystallites in the glass layer. These nano-crystallites enhance the conductivity of the glass and lead to higher fill factor (FF). The nature of these nano-crystallites was first identified by the Raman spectrometry and the peaks at 76 cm-1, 119 cm-1 and 145 cm-1 were corresponding to Ag2Te and PbTe. The conductive-AFM further confirmed the high conductivity of these nano-crystallites without pyramidal Ag crystallites, which means the current transporting from Si emitter to Ag gridlines is mainly through the nano-crystallites in the glass.

Nano-porous palladium (Pd) thin films could potentially be applied to hydrogen gas sensing materials with high sensitivity and selectivity. In our previous study, a nano-porous Pd film was fabricated with a three-dimensional network structure from an AlPd mother alloy film by a dealloying method using the chelating ability of an organic acid. This process was simple and environmentally friendly because it only required organic acid in a ppm concentration, and did not exhaust a strong acid waste solution, including heavy metal ions. This method was modified to improve the Pd purity of the dealloyed specimen, reaction rate, and morphology control. In this study, the existence of a composition undulation pattern was shown in the AlPd mother alloy film, and its effects on the morphology of the dealloyed specimen were evaluated. Furthermore, this pattern could be controlled by N2 gas addition to the Ar sputtering gas during the preparation of the AlPd mother alloy film.

We visually observed color changes of discontinuous gold surfaces on paper substrates through localized surface plasmon resonance (LSPR) at room temperature due to surface diffusion of gold nanostructures. Isolated nanoparticles and an uncompleted nanosheet of gold were obtained by thermal vapor deposition. After preservation for 8 months in air at room temperature, the particle sizes and shapes remarkably changed with color changes. The surface diffusion of the discontinuous gold on the paper would be derived from solid-state dieting, resulting in the growth of the nanosheet defect and coalescence of the nanoparticles. This is due to the total energy minimization of the surfaces of gold nanostructures and the paper and the interface between gold and the paper.

To improve the uniformity of type-II GaAsSb/InAs nanowires (NWs) grown on GaAs substrate using the position-controlled vapor-liquid-solid (VLS) method, the insertion of GaAs NW segments was investigated. In conventional InAs NWs grown directly on patterned GaAs substrate at 430°C, anomalous growth occurred in some pattern holes, and the proportion of holes having anomalous growth was in particular pronounced when a large Au catalyst diameter (80 nm) was employed, which indicates that the strain coming from the lattice-mismatched system affected the NW growth. With the insertion of GaAs segments, the yield of vertical NWs drastically improved for all pattern conditions. The uniformity of NWs was maintained after the growth of p-GaAsSb segments, and well-organized, two-dimensional arrays of type-II GaAsSb/InAs diode NWs were obtained. Moreover, the formation of p-n junctions at the GaAsSb/InAs interface was clearly observed using scanning capacitive microscopy. These results show that the investigated growth strategy is promising for the development of high-performance NW tunnel diodes.

The replacement of the strained Si channel in metal-oxide-semiconductor-field-effect-transistors (MOSFETs) with high electron mobility III-V compound semiconductors, particularly InGaAs, is being intensively investigated as an alternative to improve the drive current at low supply voltages in sub-10 nm CMOS applications. As device scaling continues, the reduction of the source and drain contact resistance becomes one of the most difficult challenges to fabricate highly scaled III-V-MOSFETs. In this article, we describe a self-aligned process based on selective molecular beam epitaxial regrowth of InxGa1-xAs (x=0-1) raised source/drain nanowire structures on etched recessed areas of a nanopatterned HfO2 template as a key element to integrate high mobility III-V materials with high-κ dielectrics in three-dimensional device architectures. The interaction of atomic H with the surface of the HfO2 nanopatterns has been investigated by using AFM, ToF-SIMS, and ARXPS. Selective growth has been observed for all values of x between 0 and 1. AFM results show that atomic H lowers the temperature process window for InxGa1-xAs selective growth. HRTEM images have revealed the conformality of the growth and the absence of nanotrench formation near the HfO2 mask edges. InxGa1-xAs alloys grown on H-treated HfO2 patterned substrates exhibit a higher uniformity in chemical composition and full strain relaxation for x≥0.5.

This study aims at establishing environmentally stable and viable silver nanowire (AgNW) electrodes of an Electrodynamic Screen (EDS) film, by the inclusion of one or more protective layers of zinc oxide (ZnO) produced in lab by combining tetrahydrofuran (THF) and diethylzinc (DEZ). The electrodes can be realized as 1) stacked structure where the AgNW electrode has a layer of ZnO on top for protection or 2) sandwiched structure where the AgNW electrode is covered by ZnO layers, protecting it from the top and bottom. Experiments are done to test the effect of accelerated exposure to ultraviolet light, high temperature and passage of high voltage on the AgNW samples and are compared with the results obtained from the AgNW samples that have the ZnO protective layer which have also been subjected to the aforementioned test conditions. A complete water immersion test is performed in order to ensure functionality and efficiency of the ZnO/AgNW samples that are to be patterned as electrodes of the EDS film. This will demonstrate viability of the structure in the case of rain.

The behavior of electron and hole transport in semiconductor materials is influenced by lattice-mismatch at the interface. It is well known that carrier scattering in a confined region is dramatically reduced. In this work, we studied the effects of coupling both the strain and confinement simultaneously. We report on the fabrication and characterization of nanoscale planar, wall-like, and wire-like Si/SiO2 structures. As the Si nanostructure dimensions were scaled down to the quantum regime by thermal oxidation of the Si, changes to the band structure and carrier effective mass were observed by both optical and electrical techniques. Transient-time response measurements were performed to examine the carrier generation and recombination behavior as a function of scaling. Signal rise times decreased for both carrier types by an order of magnitude as Si dimensions were reduced from 200 to 10 nm, meaning that the carrier velocity is increasing with smaller scale structures. This result is indicative of decreased Si bandgap energy and carrier effective mass. Photoluminescence measurements taken at 50K showed changes in the PL response peak energies, which illustrates changes in the band structure, as the Si/SiO2 dimensions are scaled.