The variation of the electrical and optical properties under 150 keV Ar+ ion irradiation has been studied in Ge2Sb2Te5 polycrystalline films, either in the rocksalt or in the trigonal structure, by in situ reflectivity measurements and ex situ resistance measurements. As the irradiation dose increases, the disorder introduced in the crystalline films increases and the reflectivity decreases, down to a minimum value that corresponds to complete amorphization. Large differences are found by changing the irradiation temperature, for the two crystalline structures. Indeed, the measured amorphization threshold is the same for the two crystalline phases and equal to 1x1013 cm-2 under irradiation at 77K, whilst at room temperature the trigonal phase requires a dose almost double than the rocksalt phase to be amorphized. By structural analyses we found that, before amorphization, ion irradiation induces a transition from the trigonal to the rocksalt structure. The van der Waals gaps present in the trigonal phase might act as preferential sinks for the displaced and mobile atoms, thus promoting this transition. By further increasing the irradiation dose the formed disordered rocksalt phase converts into the amorphous phase. Ion irradiation also affects the electrical properties of the material: the disorder modifies the temperature dependence of resistance of the trigonal Ge2Sb2Te5 and induces a change of sign (from metallic to insulating behavior) at a dose of 2x1013 cm-2, well below the amorphization threshold.

AlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.

In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-x Alx N thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

In this study, mode I debonding of the interface between silica and nylon-6 is examined using molecular dynamics, to predict the mechanical behavior of the interface between the polymer and silica. The effect of two types of surface treatment to the silica– Aminopropyltriethoxysilane and Hexamethyldisilazane (APTES and HMDZ) – on debonding is studied. Comparing the results for debonding between untreated, APTES and HMDZ modified surfaces suggests that the APTES treated surface provides a higher strength and toughness for surface debonding. The strength and toughness of the treated interfaces are higher than that of those of bare silica. The simulation results also show the formation of nano-sized voids in the polymer prior to separation with silica.

This paper introduces the theoretical and experimental investigation of flexoelectric behavior in a graphene composite structure consisting of multilayer CVD-graphene deposited on an ALD-platinum catalyst layer deposited on top of n-silicon substrate. The polarization induced by varying the radius of curvature from 200–1500 mm by applying bending stresses was investigated experimentally. Meanwhile, due to the cluster-growth nature of the ALD-platinum catalyst layer, a strong correlation was observed between the resulting number of graphene layers and the Pt catalyst layer thickness, which subsequently had a strong impact on the induced polarization. A polarization current of up to 7.4 mA was detected when the composite structure was bent through a 600-mm radius of curvature. Residual stresses at the interface of the different layers were estimated experimentally in the order of 85–217 MPa. The effect of thermally-induced stresses, residual stresses at the interface layers, thickness of graphene layers, and radius of curvature were investigated theoretically using the finite element method (FEM) and first-principle analyses. Theoretically, it was confirmed that non-uniform strain results in an appreciable non-uniform graphene band gap opening, in addition to non-uniform change of the band structure across the surface and thickness which results in increasing the potential energy difference between the graphene layers. FEM confirmed that thermally induced strains could further enhance the power output of the device by inducing a flexoelectric current combined with the thermionic response. This is verified by estimating a lattice displacement up to 0.31 Å in response to 2-mW heat flux, which corresponds to an appreciable graphene band opening and a potential energy difference across the graphene layers in the order of 1.23 eV, as estimated by the tight binding model.

The contact resistivity, ρ c, between phase change material (PCM) and an electrode plays an important role in the operation of highly scaled phase change random access memory (PCRAM). We investigated the effect of surface cleaning on the ρ c between a W electrode and amorphous GeCu2Te3 (GCT) which shows high thermal stability. The surface cleaning of the amorphous GCT was conducted by Ar reverse sputtering. The ρ c of the amorphous GCT whose surface was cleaned with Ar reverse sputtering was 6.7×10-3Ω cm2. Meanwhile, the ρ c of the amorphous GCT with no surface cleaning was 8.0×10-5Ω cm2. The low ρ c in the amorphous GCT with no surface cleaning was apparently due to the existence of a low resistance Cu-rich underlayer which was formed as a consequence of surface oxidation of the amorphous GCT. These results indicate that the surface of a PCM must be treated carefully to accurately measure the contact resistivity between the PCM and electrodes.

Pulsed laser deposition (PLD) is a technique which utilizes a high energy pulsed laser ablation of targets to deposit thin films on substrates in a vacuum chamber. The high-intensity laser pulses create a plasma plume from the target material which is projected towards the substrate whereupon it condenses to deposit a thin film. Here we investigate the properties of vanadium oxide thin films prepared utilizing two variations of the pulsed laser deposition (PLD) technique: femtosecond PLD and nanosecond PLD. Femtosecond PLD (f-PLD) has a significantly higher peak intensity and shorter duration laser pulse compared to that of the excimer-based nanosecond PLD (n-PLD). Experiments have been conducted on the growth of thin films prepared from V2O5 targets on glass substrates using f-PLD and n-PLD. Characterization using SEM, XRD and Raman spectroscopy shows that the f-PLD films have significantly rougher texture prior to annealing and exhibit with an amorphous nano-crystalline character whereas the thin films grown using n-PLD are much smoother and highly predominantly amorphous. The surface morphology, structural, vibrational, and chemical- and electronic-state elemental properties of the vanadium oxide thin films, both prior to and after annealing to 450 °C, will be discussed.

The photo-structural changes in a 2 μm thick amorphous selenium (a-Se) thin film, thermally evaporated on Si substrate, have been studied by micro-Raman spectrometer with 532 nm laser at different laser power densities (1 to 64 W/mm2) and exposure times (15 – 60 s). In addition, the nanoscale photo-structural changes/photo-thermodynamic phase changes are examined on 90 nm a-Se film coated on SiO2 cladding of the optical Fiber Bragg Grating (FBG) sensor on prolonged exposure to a low power (1 mW/mm2, 10 mW/mm2) 532 nm laser, which is measured by means of photo-striction (light induced strain) in the material.