Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-22T20:17:50.225Z Has data issue: false hasContentIssue false

Comparison of Vanadium Oxide Thin Films Prepared Using Femtosecond and Nanosecond Pulsed Laser Deposition

Published online by Cambridge University Press:  03 May 2016

Ying Deng*
Affiliation:
Department of Physics, Astronomy & Materials Science, Missouri State University, Springfield, MO 65897, U.S.A.
Anthony Pelton
Affiliation:
Department of Physics, Astronomy & Materials Science, Missouri State University, Springfield, MO 65897, U.S.A.
R. A. Mayanovic
Affiliation:
Department of Physics, Astronomy & Materials Science, Missouri State University, Springfield, MO 65897, U.S.A.
*
Get access

Abstract

Pulsed laser deposition (PLD) is a technique which utilizes a high energy pulsed laser ablation of targets to deposit thin films on substrates in a vacuum chamber. The high-intensity laser pulses create a plasma plume from the target material which is projected towards the substrate whereupon it condenses to deposit a thin film. Here we investigate the properties of vanadium oxide thin films prepared utilizing two variations of the pulsed laser deposition (PLD) technique: femtosecond PLD and nanosecond PLD. Femtosecond PLD (f-PLD) has a significantly higher peak intensity and shorter duration laser pulse compared to that of the excimer-based nanosecond PLD (n-PLD). Experiments have been conducted on the growth of thin films prepared from V2O5 targets on glass substrates using f-PLD and n-PLD. Characterization using SEM, XRD and Raman spectroscopy shows that the f-PLD films have significantly rougher texture prior to annealing and exhibit with an amorphous nano-crystalline character whereas the thin films grown using n-PLD are much smoother and highly predominantly amorphous. The surface morphology, structural, vibrational, and chemical- and electronic-state elemental properties of the vanadium oxide thin films, both prior to and after annealing to 450 °C, will be discussed.

Type
Articles
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Beke, S., Thin Solid Films 519, 17611771 (2011).CrossRefGoogle Scholar
Wu, C., Feng, F., Xie, Y., Chem. Soc. Rev. 42, 51575183 (2013).Google Scholar
Amoruso, S., Ausanio, G., Bruzzese, R., Vitiello, M., Wang, X., Phys. Rev. B 71, 033406 (2005).CrossRefGoogle Scholar
Okoshi, M., Higashikawa, K., Hanabusa, M., Appl. Surf. Sci. 154–155, 424427 (2000).CrossRefGoogle Scholar
Sanz, M., de Nalda, R., Marco, J.F., Izquierdo, J.G., Ban˜ ares, L., Castillejo, M., J. Phys. Chem. C 114, 48644868 (2010).CrossRefGoogle Scholar
Ramana, C. V., Hussain, O. M., Pinto, R. & Julien, C. M., Appl. Surf. Sci. 207, 135138 (2003).CrossRefGoogle Scholar
Ramana, C. V., Smith, R. J., Hussain, O. M., Massot, M. & Julien, C. M. Surface and Interface Analysis 37, 406411 (2005).CrossRefGoogle Scholar
Rampelberg, G., De Schutter, B., Devulder, W., Martens, K., Radub, I., Detavernier, C., J. Mater. Chem. C, 3, 1135711365 (2015).CrossRefGoogle Scholar
Rajendrakumar, R.T., Karunagaran, B., Mangalaraj, D., Narayandass, Sa.K., Manoravi, P., Joseph, M., Mater. Sci. Semicond. Proces. 6, 375377 (2003).Google Scholar