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7 - Nonlinear Microwave CAD Tools in a Power Amplifier Design Example

Published online by Cambridge University Press:  07 June 2018

José Carlos Pedro
Affiliation:
Universidade de Aveiro, Portugal
David E. Root
Affiliation:
Keysight Technologies, Santa Rosa
Jianjun Xu
Affiliation:
Keysight Technologies, Santa Rosa
Luís Cótimos Nunes
Affiliation:
Universidade de Aveiro, Portugal
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Summary

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Type
Chapter
Information
Nonlinear Circuit Simulation and Modeling
Fundamentals for Microwave Design
, pp. 301 - 336
Publisher: Cambridge University Press
Print publication year: 2018

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References

Cripps, S. C., “A theory for the prediction of GaAs FET load-pull power contours,” in IEEE MTT-S Int. Microw. Symp. Dig., Boston, MA, 1983, pp. 221223.Google Scholar
Pedro, J. C., Nunes, L. C., and Cabral, P. M., “A simple method to estimate the output power and efficiency load–pull contours of class-B power amplifiers,” IEEE Trans. on Microw. Theory Techn., vol. 63, no. 4, April 2015, pp. 12391249.CrossRefGoogle Scholar
Wood, J., Aaen, P. H., Bridges, D., Lamey, D., Guyonnet, M., Chan, D. S., and Monsauret, N., “A Nonlinear electro-thermal scalable model for high-power RF LDMOS transistors,” IEEE Trans. on Microw. Theory Techn., vol. 57, no. 2, Feb. 2009, pp. 282292.Google Scholar
Gustavsen, B. and Semlyen, A., “Rational approximation of frequency domain responses by vector fitting,” IEEE Trans. on Power Delivery, vol. 14, no. 3, July 1999, pp. 10521061.CrossRefGoogle Scholar
Jardel, O., De Groote, F., Reveyrand, T., Jacquet, J. C., Charbonniaud, C., Teyssier, J. P., Floriot, D., and Quere, R., “An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR,” IEEE Trans. Microw. Theory Techn., vol. 55, no. 12, Dec. 2007, pp. 26602669.Google Scholar
Roblin, P., Root, D. E., Verspecht, J., Ko, Y., and Teyssier, J. P., “New trends for the nonlinear measurement and modeling of high-power RF transistors and amplifiers with memory effects,” IEEE Trans. Microw. Theory Techn., vol. 60, no. 6, June 2012, pp. 19641978.Google Scholar
Santarelli, A., Cignani, R., Gibiino, G. P., Niessen, D., Traverso, P. A., Florian, C., Schreurs, D. M. M. P., and Filicori, F., “A double-pulse technique for the dynamic I/V characterization of GaN FETs,” IEEE Microwave Wireless Comp. Lett., vol. 24, no. 2, Feb. 2014, pp. 132134.CrossRefGoogle Scholar
Nunes, L. C., Gomes, J. M., Cabral, P. M., and Pedro, J. C., “A new nonlinear model extraction methodology for GaN HEMTs subject to trapping effects,” in IEEE MTT-S Int. Microwave Symp. Dig., Phoenix, AZ, 2015, pp. 14.Google Scholar
Aaen, P., Plá, J. A. and Wood, J., Modeling and Characterization of RF and Microwave Power FETs, New York: Cambridge University Press, 2011.Google Scholar
Nunes, L. C., Cabral, P. M. and Pedro, J. C., “AM/AM and AM/PM distortion generation mechanisms in Si LDMOS and GaN HEMT based RF power amplifiers,” IEEE Trans. Microw. Theory Techn., vol. 62, no. 4, April 2014, pp. 799809.Google Scholar
Kim, B., Kim, I. and Moon, J., “Advanced Doherty Architecture,” IEEE Microw. Mag., vol. 11, no. 5, Aug. 2010, pp. 7286.Google Scholar
Theeuwen, S. J C H and Qureshi, J. H., “LDMOS technology for RF power amplifiers,” IEEE Trans. on Microw. Theory Techn., vol. 60, no. 6, June 2012, pp.17551763.CrossRefGoogle Scholar
Keysight Technologies Advanced Design System (ADS) Software, 2016, url: http://www.keysight.com/en/pc-1297113/advanced-design-system-ads.Google Scholar
Applied Wave Research Microwave Office (AWR - MWO), 2016, url: http://www.awrcorp.com/products/microwave-office.Google Scholar
Pedro, J. and Carvalho, N., Intermodulation Distortion in Microwave and Wireless Circuits, Norwood, MA: Artech House, 2003.Google Scholar
Maas, S. and Crosmun, A., “Modeling the gate I/V characteristic of a GaAs MESFET for Volterra-series analysis,” IEEE Trans. Microw. Theory Techn., vol. 37, no. 7, July 1989, pp. 11341136.Google Scholar
Pedro, J. and Perez, J., “Accurate simulation of GaAs MESFET’s intermodulation distortion using a new drain-source current model,” IEEE Trans. Microw. Theory Techn., vol. 42, no. 1, Jan. 1994, pp. 2533.Google Scholar
Pedro, J. Nunes, L. and Cabral, P., “Soft compression and the origins of nonlinear behavior of GaN HEMTs,” in 44th Europ. Microwave Conf. Proc., 29th European Microw. Conf. Proc., 2014, pp. 1297–1300.Google Scholar

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