93 results
Chloride Ion Detection by InN Gated AlGaN/GaN High Electron Mobility Transistors
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1202 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1202-I06-05
- Print publication:
- 2009
-
- Article
- Export citation
Electrical Detection of Deoxyribonucleic Acid Hybridization With AlGaN/GaN High Electron Mobility Transistors
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I14-06
- Print publication:
- 2006
-
- Article
- Export citation
Development of Thin Film and Nanorod ZnO-Based LEDs and Sensors
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 957 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0957-K01-05
- Print publication:
- 2006
-
- Article
- Export citation
ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF18-01-EE09-01
- Print publication:
- 2005
-
- Article
- Export citation
Growth of a-plane ZnO Thin Films on r-plane Sapphire by Plasma-assisted MBE
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 891 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0891-EE10-01
- Print publication:
- 2005
-
- Article
- Export citation
Photoreflectance Characterization and Control of Defects in Gan by Etching with an Inductively Coupled Plasma
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L3.56
- Print publication:
- 2002
-
- Article
- Export citation
Self-Aligned Process For Emitter- And Base- Regrowth GaN HBTs And BJTs
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G11.32
- Print publication:
- 2000
-
- Article
- Export citation
Behavior of W and WSix Contact Metallization on n- and p- Type GaN
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 684-690
- Print publication:
- 1999
-
- Article
-
- You have access
- HTML
- Export citation
Selective Dry Etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP Systems
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 573 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 281
- Print publication:
- 1999
-
- Article
- Export citation
Novel in-situ Ion Bombardment Process for A Thermally Stable (> 800 °C) Plasma Deposited Dielectric
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 573 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 183
- Print publication:
- 1999
-
- Article
- Export citation
Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 573 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 69
- Print publication:
- 1999
-
- Article
- Export citation
GaN Etching in BCl3/Cl2 Plasmas
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 487
- Print publication:
- 1998
-
- Article
- Export citation
Behavior of W and WSix Contact Metallization on n- and p- Type GaN
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.39
- Print publication:
- 1998
-
- Article
- Export citation
Hydrogen in GaN-Experiments
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 513 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 229
- Print publication:
- 1998
-
- Article
- Export citation
Hydrogenation and Defect Creation in GaAs-Based Devices During High Density Plasma Processing
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 510 / January 1998
- Published online by Cambridge University Press:
- 10 February 2011, 209
- Print publication:
- January 1998
-
- Article
- Export citation
Implantation Activation Annealing of Si-Implanted Gallium Nitride at Temperatures > 1100 °C
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 401
- Print publication:
- 1997
-
- Article
- Export citation
Patterning of GaN in High-Density Cl2- and BCl3-Based Plasmas
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 355
- Print publication:
- 1997
-
- Article
- Export citation
In-Situ Monitoring Of Etch By-Products During Reactive Ion Beam Etching Of Gaas In Chlorine/Argon
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 483 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 191
- Print publication:
- 1997
-
- Article
- Export citation
ICP Dry Etching of III-V Nitrides
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 393
- Print publication:
- 1997
-
- Article
- Export citation
Development of GaN and InGaN Gratings by Dry Etching
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 379
- Print publication:
- 1997
-
- Article
- Export citation