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Self-Aligned Process For Emitter- And Base- Regrowth GaN HBTs And BJTs

Published online by Cambridge University Press:  17 March 2011

K. P. Lee ,
A. P. Zhang ,
G. Dang ,
F. Ren ,
J. Han ,
S.N.G. Chu ,
W. S. Hobson ,
J. Lopata ,
C. R. Abernathy  and
S. J. Pearton
...Show all authors
K. P. Lee
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville FL 32611
A. P. Zhang
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville FL32611
G. Dang
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville FL32611
F. Ren
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville FL32611
J. Han
Affiliation:
Sandia National Laboratories, MS0603, PO Box 5800, Albuquerque, NM 87185
S.N.G. Chu
Affiliation:
AT&T Bell Labs, Lucent Technologies, 600 Mountain Ave. Murray Hill, NJ 07974
W. S. Hobson
Affiliation:
AT&T Bell Labs, Lucent Technologies, 600 Mountain Ave. Murray Hill, NJ 07974
J. Lopata
Affiliation:
AT&T Bell Labs, Lucent Technologies, 600 Mountain Ave. Murray Hill, NJ 07974
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville FL 32611
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville FL 32611
J. W. Lee
Affiliation:
Department of Optical Engineering, Inje University, Kimhae, Korea
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Abstract

The development of a self-aligned fabrication process for small emitter contact area (2×4 um2) GaN/AlGaN heterojunction bipolar transistors and GaN bipolar junction transistors is described. The process features dielectric-spacer sidewalls, low damage dry etching and selected-area regrowth of p-GaAs(C) on the base contact or n-GaN/AlGaN on the emitter contact. Series resistance effects are still found to influence the device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.32
Copyright
Copyright © Materials Research Society 2001

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References

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