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Implantation Activation Annealing of Si-Implanted Gallium Nitride at Temperatures > 1100 °C

Published online by Cambridge University Press:  10 February 2011

J. C. Zolper ,
J. Han ,
R. M. Biefeld ,
S. B. Van Deusen ,
W. R. Wampler ,
S. J. Pearton ,
J. S. Williams ,
H. H. Tan ,
R. J. Karlicek Jr  and
R. A. Stall
J. C. Zolper
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603
R. M. Biefeld
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603
S. B. Van Deusen
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603
W. R. Wampler
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603
S. J. Pearton
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
J. S. Williams
Affiliation:
Dept. of Electronic Materials Engineering, Australian National University, Canberra, 0200, Australia
H. H. Tan
Affiliation:
Dept. of Electronic Materials Engineering, Australian National University, Canberra, 0200, Australia
R. J. Karlicek Jr
Affiliation:
Emcore Corp., Somerset, NJ 08873
R. A. Stall
Affiliation:
Emcore Corp., Somerset, NJ 08873
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Abstract

The activation annealing of Si-implanted GaN is reported for temperatures from 1100 to 1400 °C. Although previous work has shown that Si-implanted GaN can be activated by a rapid thermal annealing at ∼1100 °C, it was also shown that significant damage remained in the crystal. Therefore, both AlN-encapsulated and uncapped Si-implanted GaN samples were annealed in a metal organic chemical vapor deposition system in a N2/NH3 ambient to further assess the annealing process. Electrical Hall characterization shows increases in carrier density and mobility for annealing up to 1300 °C before degrading at 1400 °C due to decomposition of the GaN epilayer. Rutherford backscattering spectra show that the high annealing temperatures reduce the implantation induced damage profile but do not completely restore the as-grown crystallinity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 401
Copyright
Copyright © Materials Research Society 1997

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References

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