Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-29T06:56:57.259Z Has data issue: false hasContentIssue false
  • English
  • Français

ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters

Published online by Cambridge University Press:  01 February 2011

Andrei Osinsky ,
Jianwei Dong ,
J. Q. Xie ,
B. Hertog ,
A. M. Dabiran ,
P. P. Chow ,
S. J. Pearton ,
D. P. Norton ,
D. C. Look  and
W. Schoenfeld
...Show all authors
Andrei Osinsky
Affiliation:
[email protected], SVT Associates, 7620 Executive Dr., Eden Prairie, MN, 55347, United States, 952-934-2100 x240, 952-934-2737
Jianwei Dong
Affiliation:
[email protected], SVT Associates, Inc., United States
J. Q. Xie
Affiliation:
[email protected], SVT Associates, Inc., United States
B. Hertog
Affiliation:
[email protected], SVT Associates, Inc., United States
A. M. Dabiran
Affiliation:
[email protected], SVT Associates, Inc., United States
P. P. Chow
Affiliation:
[email protected], SVT Associates, Inc., United States
S. J. Pearton
Affiliation:
[email protected], University of Florida, United States
D. P. Norton
Affiliation:
[email protected], University of Florida, United States
D. C. Look
Affiliation:
[email protected], Wright State University, United States
W. Schoenfeld
Affiliation:
[email protected], University of Central Florida, United States
O. Lopatiuk
Affiliation:
[email protected], University of Central Florida, United States
L. Chernyak
Affiliation:
[email protected], University of Central Florida, United States
M. Cheung
Affiliation:
University at Buffalo, Buffalo, NY 14260
A.N. Cartwright
Affiliation:
University at Buffalo, Buffalo, NY 14260
M. Gerhold
Affiliation:
[email protected], U.S. Army Research Office, United States
Get access

Abstract

This paper reviews of some of the progress made in the development of ZnO-based light emitting diodes (LEDs). n-ZnO/p-AlGaN-based heterostructures have been successfully for the fabrication of UV emitting LEDs that have operated at temperatures up to 650K, suggesting an excitonic origin for the optical transitions. RF-plasma-assisted molecular beam epitaxy has been used to grow epitaxial CdxZn1-xO films on GaN/sapphire structure. These films have a single-crystal wurtzite structure as demonstrated by structural and compositional analysis. High quality CdxZn1-xO films were grown with up to x=0.78 mole fraction as determined by RBS and SIMS techniques. Optical emission ranging from purple (Cd0.05Zn0.95O) to yellow (Cd0.29Zn0.71O) was observed. Compositional fluctuations in a Cd0.16Zn0.84O films were not detected by spatially resolved CL measurements, although intensity fluctuation with features of ∼0.5 μm diameter were seen on the intensity maps. Time resolved photoluminescence shows multi-exponential decay with 21 psec. and 49±3 psec. lifetimes, suggesting that composition micro-fluctuations may be present in Cd0.16Zn0.84O film.

Keywords

II-VImolecular beam epitaxy (MBE)optoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF18-01-EE09-01
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Look, D. C., Mater. Sci. Eng. B 80, 383 (2001).CrossRefGoogle Scholar
2. Norton, D. P., Heo, Y. W., Ivill, M. P., Ip, K., Pearton, S. J., Chisholm, M. F., and Steiner, T., Mater. Today 7, 34 (2004).CrossRefGoogle Scholar
3. Osinsky, A., Dong, J. W., Kauser, M. Z., Hertog, B., Dabiran, A. M., Plaut, C., Chow, P. P., Pearton, S. J., Dong, X. Y., Palmstrom, C. J., “MgZnO/ZnO Heterostructures for UV Light Emitters and Spintronic Applications: Material Growth and Device Design,” Electrochemical Society Proceedings, Vol. 6, 70 (2004).Google Scholar
4. Osinsky, A., Dong, J.W., Kauser, M.Z., Hertog, B., Dabiran, A.M., Chow, P.P., Pearton, S.J., Lopatiuk, O., Chernyak, L., “MgZnO/AlGaN heterostructure light-emitting diodes,” Appl. Phys. Lett., 85(19) 4272–4274 (2004).Google Scholar
5. Ambacher, O., Foutz, B., Smart, J., Shelay, J. R., Weimann, N. G., Chu, K., Murphy, M., Sierakowski, A. J., Schaff, W. J., Eastman, L. F., Dimitrov, R., Mitchell, A., and Stutzmann, M., J. Appl. Phys. 87, 334 (2000).CrossRefGoogle Scholar
6. Dong, J. W., Osinsky, A., Hertog, B., Dabiran, A. M., and Chow, P. P., “Development of MgZnO-ZnO-AlGaN Heterostructures for Ultraviolet Light Emitting Applications,” Journal of Electronic Materials (2004).Google Scholar
7. Shigemori, S., Nakamura, A., Ishihara, J., Aoki, T., and Temmyo, J., Jpn. J. Appl. Phys. 43, L1088 (2004).CrossRefGoogle Scholar