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Naphthalene diimide-based polymeric semiconductors. Effect of chlorine incorporation and n-channel transistors operating in water – CORRIGENDUM

Published online by Cambridge University Press:  15 March 2016

Abstract

Type
Corrigendum
Copyright
Copyright © Materials Research Society 2016 

In Ryu et al.,Reference Ryu, Chen, Fabiano, Usta, Noh and Facchetti 1 there should have been an additional author, Simone Fabiano, included in the author list. Therefore, the updated author list is as follows:

Gi-Seong Ryu, Advanced Energy and Electronic Materials Research Center, Dongguk University, 30, Pil-dong-ro, 1-gil, Jung-gu, Seoul 100-715, Republic of Korea

Zhihua Chen, Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinios 60077, USA

Simone Fabiano, Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, SE-601 74, Norrköping, Sweden

Hakan Usta, Department of Materials Science and Nanotechnology Engineering, Abdullah Gül University, Kayseri, Turkey

Yong-Young Noh, Advanced Energy and Electronic Materials Research Center, Dongguk University, 30, Pil-dong-ro, 1-gil, Jung-gu, Seoul 100-715, Republic of Korea; Department of Energy and Materials Engineering, Dongguk University, 30, Pil-dong-ro, 1-gil, Jung-gu, Seoul 100-715, Republic of Korea

Antonio Facchetti, Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinios 60077, USA; Center of Excellence for Advanced Materials Research (CEAMR), King Abdulaziz University, Jeddah, Saudi Arabia

The authors regret this omission.

References

1. Ryu, G.-S., Chen, Z., Fabiano, S., Usta, H., Noh, Y.-Y., and Facchetti, A.: Naphthalene diimide-based polymeric semiconductors. Effect of chlorine incorporation and n-channel transistors operating in water. MRS Communications 6, 4760 (2016). doi: 10.1557/mrc.2016.4.Google Scholar