Research Article
Review of polarity determination and control of GaN
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- 13 June 2014, e1
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Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere
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- 13 June 2014, e2
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Low dislocation density, high power InGaN laser diodes
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- 13 June 2014, e3
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Preparation of stoichiometric GaN(0001)−1×1: an XPS study
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- 13 June 2014, e4
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Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures
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- 13 June 2014, e5
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The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by Sublimation
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- 13 June 2014, e6
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The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors
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- 13 June 2014, e7
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Electron Beam Bombardment Induced Decrease of Cathodoluminescence Intensity from GaN Not Caused by Absorption in Buildup of Carbon Contamination
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- 13 June 2014, e8
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