We have adapted a scanning photoluminescence (SPL) apparatus, previously developed for
III-V compounds analysis, for the characterization of SiC. The PL mapping is obtained by
scanning the sample, fixed to an x-y stage with 1 μm minimal step, under a doubled Ar+ laser
beam (244 nm) focused by a microscope objective (×52). For this excitation the spot
diameter is about 4 μm. The PL signal can be either directly detected, giving integrated
PL intensity, either dispersed using a monochromator, giving spectrally resolved PL (1 nm
resolution). The measurements can be realized at room temperature for near band edge
studies, or at low temperature (80 K) for deep defects investigation. The gettering effect
of non radiative centres by the screw dislocations in 6H-SiC is evidenced using this
apparatus.