Electrical properties of a device depend primarily on the active dopant concentration;
understanding of the activation (annealing) process is crucial for the prediction of device
behaviour. The present paper reports results from a computer based simulation approach
to improve the breakdown performance of the device by studying the annealing
behaviour of boron implanted in silicon. In order to have deep insight of the effect of
defect complexes on the device performance, extended defect model has been
incorporated in the simulation program. Optimization of annealing time, annealing
temperature and dose has been performed, for the first time, incorporating a complete set
of process induced defects like {113} defects, interface traps, dislocation loops and the
optimization has been validated in terms of the breakdown performance of the device.