For a solution droplet in equilibrium with the atmospheric environment, a relationship exists between radius and concentration, which allows to express the saturation ratio of the droplet as a function of either one of these two parameters. The curves showing the complete behaviour of saturation ratio as a function of radius, for various sizes of NaCl nuclei, were previously presented for both wholly and partially dissolved salt. Here, the dependence of saturation ratio on droplet concentration, rather than on its radius, is examined and plotted for various NaCl nuclei. The occurrence of an analogous, but X-shaped, hysteresis phenomenon, characterizing the behaviour of the solution concentration in a growing-shrinking cycle of a solution droplet under changing humidity, is evidenced and discussed. An insoluble spherical core is assumed to be always present inside the condensation nucleus, so that the onset of the sudden salt re-crystallization is triggered at a well defined concentration value.

A self-decoupled inelastic style piezoelectric three-degrees-of-freedom (three-DOF) accelerometer is put forward for the solution of cross coupling interference without decoupling easily in the field of three-DOF acceleration sensing. Meanwhile, the proposed piezoelectric three-DOF accelerometer has simple structure and solves the contradictions between high stiffness and high sensitivity. The operating principle of the presented piezoelectric three-DOF accelerometer is analyzed, and its structure model is constructed. The numerical simulation model (finite element model) of the three-axis accelerometer is established. Piezoelectric quartz is chosen for the acceleration sensing element and conversion element, and its output sensitivity, static characteristics, dynamic natural frequency, etc. are analyzed by FEM tool (ANSYS software). Research results show that the proposed piezoelectric three-DOF accelerometer has advantages of simple and rational structure, correct sensing principle and mathematic model, good linearity, high rigidity, and theoretical natural frequency is more than 16 kHz, self-decoupled without complex decoupling work.

Self-consistent ab initio calculations, based on the density functional theory (DFT) approach and using the full potential linear augmented plane wave (FLAPW) method, are performed to investigate both the electronic and magnetic properties of CrSb compounds. Spin-polarised calculations, including the spin-orbit interaction, are used to determine the energy of the ferromagnetic (FM) and antiferromagnetic (AFM) states of CrSb. Magnetic moments considered along the (0 0 1) axis are computed. Data obtained from ab initio calculations are used as input for high temperature series expansions (HTSEs) to compute other magnetic parameters. The exchange interactions between the magnetic atoms Cr-Cr in CrSb are studied using the mean field theory. The high temperature series expansions (HTSEs) of the magnetic susceptibility are given up to tenth order (x = J1(Cr-Cr)/kBT). The Néel temperature TN is obtained by HTSEs of the magnetic susceptibility combined with the Padé approximant method. The critical exponent γ associated with the magnetic susceptibility is deducedas well.

In this research the effect of electric field on two groups of wet and dry Pisum sativum seeds growth was studied. To generate the required electric field a parallel-plate capacitor with round copper plates of 30 cm diameter was used. The experiments were performed once in fixed exposure duration of 8 min in variable DC electric field of 0.25–1.5 kV/m. The other experiments were performed in variable fields of 50–125 kV/m in fixed exposure duration of 8 min, in two groups of AC and DC electric fields. The experiments were repeated three times. In each experiment 10 seeds were used and there was a sham exposed group for comparison, too. After application of electric field, the seeds were kept for six days in the same growth chamber with the temperature of 25 ± 1 °C and 12 h light/12 h darkness. On the 6th day length of stems and height of roots were measured. After doing statistical analysis, in low intensities of DC electric field, the highest significant increase of mean growth (The average of stem length and the height of roots) was seen in 1.5 kV/m in wet seeds. In high intensities of DC and AC electric fields, the highest significant increase of mean growth was seen in AC electric field of 100 kV/m in wet seeds.

Previous researchers have made studies on different influences created by light irradiation to animals, including retinal damage, changes of inner index and so on. However, the model of light induced damage to animals using physiological indicators as features in machine learning method is never founded. This study was designed to evaluate the changes in micro vascular diameter, the serum absorption spectrum and the blood flow influenced by light irradiation of different wavelengths, powers and exposure time with support vector machine (SVM). The micro images of the mice auricle were recorded and the vessel diameters were calculated by computer program. The serum absorption spectrums were analyzed. The result shows that training sample rate 20% and 50% have almost the same correct recognition rate. Better performance and accuracy was achieved by third-order polynomial kernel SVM quadratic optimization method and it worked suitably for predicting the light induced damage to organisms.

It is well-known that the characteristics of aluminum nitride thin films mainly depend on their morphologies, the quality of the film-substrate interfaces and the open volume defects. A study of the depth profiling and morphological characterization of AlN thin films deposited on two types of Si substrates is presented. Thin films of thicknesses between 200 and 400 nm were deposited during two deposition times using a reactive sputter magnetron. These films were characterized by means of X-ray diffraction and imaging techniques (SEM and TEM). To analyze the composition of the films, energy dispersive X-ray spectroscopy was applied. Positron annihilation spectroscopy, specifically Doppler broadening spectroscopy, was used to gather information on the depth profiling of open volume defects inside the films and the AlN films-Si substrate interfaces. The results are interpreted in terms of the structural changes induced in the films as a consequence of changes in the deposition time (i.e., thicknesses) and of the orientation of the substrates.