The nature of the hydrogen bonding and content and their influence on the film
microstructure have been investigated in detail, as a function of the H2 dilution and the
residual pressure, in hydrogenated amorphous silicon (a-Si:H) films prepared by
radiofrequency (rf) magnetron sputtering at a common substrate temperature (~ 250 °C) and
pressure (5 × 10−4 torr) and high rates (11−15 Å/s). H2 percentages in the gas phase
mixture (Ar + % H2) of 5, 10, 15 and 20% have been introduced during growth. For the 20% of H2,
two different pressures of 5 × 10−4 and 50 × 10−4 torr were used. A combination of
infrared absorption, optical transmission and elastic recoil detection analysis experiments have been
carried out to fully characterize the samples in their as-deposited state. The results clearly
indicate that for H2 percentage equal to or lower than 15% , the total bonded H content in the
films increases as the H2 percentage increases, and then reaches a saturation value or even
decreases for higher H2 percentage. Moreover, the microstructure is also found to be deeply
affected by the H2 dilution and pressure. In particular, for high H2 percentage (20%) and high
pressure (50 × 10−4 torr), unbounded H as well as polyhydride (Si-H2)n chains, possibly
located in structural inhomogeneities such as voids, are also present in the films in addition to the
isolated monohydride Si-H and polyhydride Si-H2 complexes. As a result, a reduction of the
compactness of the film structure associated with a decrease of the refractive index n is
observed. The optical gap is found to be rather controlled by the total bonded hydrogen
content. The lowest proportion of isolated polyhydride Si-H2 complexes and the highest
density are observed for films deposited with 10% of H2 in the gas phase and a pressure of
5 × 10−4 torr.