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Thermoelectric properties and mobility activation energyof amorphous As20Se80−x Tlx films

Published online by Cambridge University Press:  22 February 2007

M. Dongol ,
M. M. El-Nahass ,
M. Abou-zied  and
A. El-Denglawey
M. Dongol
Affiliation:
Physics Department Faculty of Sciences South Valley University, 6 Kilo Road, 83523, Qena, Egypt
M. M. El-Nahass
Affiliation:
Physics Department Faculty of Education Ain Shams University, Cairo, Egypt
M. Abou-zied
Affiliation:
Physics Department Faculty of Sciences South Valley University, 6 Kilo Road, 83523, Qena, Egypt
A. El-Denglawey*
Affiliation:
Physics Department Faculty of Sciences South Valley University, 6 Kilo Road, 83523, Qena, Egypt
*
[email protected]
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Abstract

Thermal evaporation technique was used to prepare As20Se80−x Tlx films from bulk materials;( $5\leqslant x\leqslant 35$  at.%). The effect of TI addition on the thermoelectric properties and mobility activation energy of As-Se-Tl chalcogenide semiconductors has been studied in the homogeneous glass-forming region through temperature range (300–380 K). The thermoelectric power, TEP had a positive sign over the whole temperature range investigated, indicating p-type conductivity for As20Se80 −x Tlx films. TEP activation energy, $\Delta E_{s}$ could be calculated from TEP measurements. It was found that $\Delta E_{s}$ decreases with increasing Tl-content and is found to vary between 0.814 and 0.517 eV. The mobility activation energy, $\Delta E_{Q}$ could be calculated.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 37 , Issue 3 , March 2007 , pp. 257 - 260
Copyright
© EDP Sciences, 2007

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