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The residual electrically active damage in low energy boron implanted silicon: rapid thermal annealing and implant mass effects*
Published online by Cambridge University Press: 15 July 1998
Abstract
The present study deals with the investigation of electrically active damage induced by direct and through protecting oxide layer implantation of 11B+ ions. The residual defects have been determined by means of Deep Level Transient Spectroscopy (DLTS). It has been found that the number of defects is practically reduced to one centre when the implantation is performed through an oxide layer. The defect spectrum evolution, under the effect of the implant mass and the RTA treatments, has been also investigated. The defect generation kinetics, under annealing treatments, is found strongly depending on 11B+ ionic number reaching the substrate.
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- © EDP Sciences, 1998
References
* This paper was presented at the "Journées Maghrébines sur les Sciences des Matériaux", held at Hammamet, the 8, 9 and 10 November 1996.
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