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The residual electrically active damage in low energy boron implanted silicon: rapid thermal annealing and implant mass effects*

Published online by Cambridge University Press:  15 July 1998

L. Kaabi ,
J. Ben Brahim ,
B. Remaki ,
C. Gontrand ,
H. El Omari ,
J.-C. Bureau ,
Z. Sassi  and
B. Balland
L. Kaabi
Affiliation:
Institut National des Sciences Appliquées et de Technologie, Département de Génie Physique et Instrumentation, Centre Urbain Nord, BP 676, 1080 Tunis Cedex, Tunisia Laboratoire de Physique de la Matière (U.M.R., C.N.R.S.) C55-11, Institut National des Sciences Appliquées de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France
J. Ben Brahim
Affiliation:
Institut National des Sciences Appliquées et de Technologie, Département de Génie Physique et Instrumentation, Centre Urbain Nord, BP 676, 1080 Tunis Cedex, Tunisia
B. Remaki
Affiliation:
Laboratoire de Physique de la Matière (U.M.R., C.N.R.S.) C55-11, Institut National des Sciences Appliquées de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France
C. Gontrand
Affiliation:
Laboratoire de Physique de la Matière (U.M.R., C.N.R.S.) C55-11, Institut National des Sciences Appliquées de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France
H. El Omari
Affiliation:
Laboratoire de Physique de la Matière (U.M.R., C.N.R.S.) C55-11, Institut National des Sciences Appliquées de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France
J.-C. Bureau
Affiliation:
Laboratoire de Thermodynamique Appliquée (C.N.R.S. - U.P.R.E.S.-A), Institut National des Sciences Appliquées de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France
Z. Sassi
Affiliation:
Laboratoire de Thermodynamique Appliquée (C.N.R.S. - U.P.R.E.S.-A), Institut National des Sciences Appliquées de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France
B. Balland
Affiliation:
Laboratoire de Physique de la Matière (U.M.R., C.N.R.S.) C55-11, Institut National des Sciences Appliquées de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France
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Abstract

The present study deals with the investigation of electrically active damage induced by direct and through protecting oxide layer implantation of 11B+ ions. The residual defects have been determined by means of Deep Level Transient Spectroscopy (DLTS). It has been found that the number of defects is practically reduced to one centre when the implantation is performed through an oxide layer. The defect spectrum evolution, under the effect of the implant mass and the RTA treatments, has been also investigated. The defect generation kinetics, under annealing treatments, is found strongly depending on 11B+ ionic number reaching the substrate.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 3 , Issue 1 , July 1998 , pp. 49 - 52
Copyright
© EDP Sciences, 1998

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References

* This paper was presented at the "Journées Maghrébines sur les Sciences des Matériaux", held at Hammamet, the 8, 9 and 10 November 1996.